Mamoru Sawahata
Hitachi
Japanese Journal of Applied Physics | 2002
Jin Onuki; Mitsuo Katou; Mamoru Sawahata; Takao Komiyama; Yasunori Chonan
A low temperature Joining process using sputtered Ag films has been investigated. The surfaces of Ag films were cleaned by heating them to more than 523 K in air. After cleaning, the Si chip and the Mo can be joined using a Ag film under joining conditions as: temperature 503 K; compressive stress: 60 MPa; holding time: 0.5 h; atmosphere: air. A diode made with this low temperature joining process using Ag film exhibits an excellent low leakage current–voltage characteristics.
Archive | 1986
Tasao Soga; Marahiro Goda; Fumio Nakano; Tadao Kushima; Nobuyuki Ushifusa; Fumiyuki Kobayashi; Mamoru Sawahata
Archive | 1993
Hirokazu Inoue; Masahiro Takasaka; Koichi Watanabe; Takashi Hosokawa; Mamoru Sawahata
Archive | 1992
Takashi Hosokawa; Hirokazu Inoue; Mamoru Sawahata; Masaki Fukuoka
Archive | 1999
Hironori Kodama; Mitsuo Katou; Mamoru Sawahata
Archive | 2002
Hironori Kodama; Mitsuo Katou; Mamoru Sawahata
Archive | 1995
Kazuji Yamada; Akira Tanaka; Ryuichi Saito; Yasutoshi Kurihara; Tadao Kushima; Takashi Haramaki; Yoshihiko Koike; Takashi Hosokawa; Mamoru Sawahata; Masahiro Koizumi; Jin Onuki; Kazuhiro Suzuki; Isao Kobayashi; Hideo Shimizu; Yutaka Higashimura; Shigeki Sekine; Nobuya Koike; Hideya Kokubun
Archive | 1982
Tasao Soga; Takaya Suzuki; Mamoru Sawahata; Tadao Kushima
Archive | 1992
Takashi Hosokawa; Hirokazu Inoue; Mamoru Sawahata; Masaki Fukuoka
Archive | 1986
Hiroshi Honjo; Koichi Inoue; Mamoru Sawahata; Tasao Soga; Komei Yatsuno
