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Dive into the research topics where Mangesh S. Diware is active.

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Featured researches published by Mangesh S. Diware.


Journal of Applied Physics | 2013

Temperature dependence of the dielectric functions and the critical points of InSb by spectroscopic ellipsometry from 31 to 675 K

Tae Jung Kim; Soon Yong Hwang; Jun Seok Byun; Mangesh S. Diware; Junho Choi; Han Gyeol Park; Young Dong Kim

We report the complex dielectric function of InSb for temperatures from 31 to 675 K and energies from 0.74 to 6.42 eV. The spectra were obtained by rotating-compensator spectroscopic ellipsometry on bulk InSb. The critical point (CP) energies were determined using numerically calculated second energy derivatives of the data. At low temperature, the CP structures are blue-shifted and significantly sharpened relative to those seen at high temperature. The temperature dependence of the E1, E1+Δ1, E0′, Δ5cu-Δ5vu (0.35, 0, 0), E0′+Δ0′, Δ5cl-Δ5vu (0.35, 0, 0), E2, E2′, E2+Δ2, E2′+Δ2, E1′, E1′+Δ1′, and E1′+Δ1′+Δ1 CPs was determined by fitting to a phenomenological expression that contains the Bose-Einstein statistical factor or to a linear equation. In particular, temperature dependences of CPs below 100 K and those of the E0′, E0′+Δ0′, E2′, E2+Δ2, E2′+Δ2, E1′+Δ1′, and E1′+Δ1′+Δ1 transitions have not previously been reported.


Journal of Applied Physics | 2012

Parameterization of the dielectric function of InP from 1.19 to 6.57 eV for temperatures from 25 to 700 K

Tae Jung Kim; Soon Yong Hwang; Jun Seok Byun; Mangesh S. Diware; Junho Choi; Han Gyeol Park; Young Dong Kim

We present an analytic expression that accurately represents the dielectric function ɛ = ɛ1 + iɛ2 of InP from 1.19 to 6.57 eV for temperatures from 25 to 700 K. The original data were obtained on a InP substrate by spectroscopic ellipsometry. The analytic representation is based on the parametric model, which is known to accurately portray ɛ without unphysical assumptions. The ɛ data are successfully reconstructed by eight Gaussian-broadened polynomials and a pole and can be used to determine ɛ as a continuous function of energy and temperature within the limits given above. Our results should be useful in a number of contexts, including device design and in situ monitoring of deposition. A representative deposition example is discussed.


Biointerphases | 2017

Label-free detection of hepatitis B virus using solution immersed silicon sensors

Mangesh S. Diware; Hyun Cho; Won Chegal; Yong Jai Cho; Sang Won O; Se-Hwan Paek; Dong Soo Kim; Kyeong-Suk Kim; Yoon Gi Min; Jae Heung Jo; ChaeHo Shin

Highly sensitive solution immersed silicon (SIS) biosensors were developed for detection of hepatitis B virus (HBV) infection in the early stage. The ultrasensitivity for overlayer thickness at the nonreflecting condition for the p-polarized wave is the basis of SIS sensing technology. The change in thickness due to biomolecular interactions and change in refractive index of the surrounding buffer medium were assessed simultaneously using two separate ellipsometric parameters (Ψ and Δ), respectively, from a single sensing spot. A direct antigen-antibody affinity assay was used to detect and quantify hepatitis B surface antigen (HBsAg), which is the early stage biomarker for HBV infection. The detection limit of 10 pg/ml was achieved for HBsAg in the human blood serum, which is comparable with the results of enzyme-linked immunosorbent assay and other hybrid assays. The SIS sensors response time was less than 10 min. The SIS sensors exhibit excellent stability and high signal-to-noise ratio, and are cost-effective, which makes them a suitable candidate for point-of-care applications.


SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012 | 2013

Stability of UV exposed RR-P3BT films by spectroscopic ellipsometry

Mangesh S. Diware; Jun Seok Byun; Soon Yong Hwang; TaeWan Kim; Young Dong Kim

Stability of regioregular poly(3-butylthiophene) (RR-P3BT) films under irradiation of ultra-violet (UV) light has been studied by spectroscopic ellipsometry at room temperature. Consistent decrease in dielectric function with UV exposure time showed the degree of degradation of polymer. This work suggests that, protective methods are mandatory to use this kind of material in optical devices.


Advances in Natural Sciences: Nanoscience and Nanotechnology | 2010

In-situ study of molecular dynamics in a water environment by using imaging ellipsometry

Soon Yong Hwang; Tae Jung Kim; Mangesh S. Diware; Young Dong Kim

We report on the dynamics of bio molecules and a high polymer in a water environment by using imaging ellipsometry (IE). The morphology of collapsed films of arachidic acid (AA) and poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) Langmuir monolayers in a liquid solution is investigated. The IE images clearly show that the multilayer domains and thickness of the collapsed region change sensitively depending on Langmuir compression. Also, the adsorption of bovine serum albumin is observed by using total internal reflection resonance IE (TIRIE), which has the advantage of IE and surface plasmon resonance. We believe that IE is a powerful technique for analysis and applications of bio materials.


Journal of the Korean Physical Society | 2012

Parametric model dielectric functions of InAs for temperatures from 22 to 675 K

Tae Jung Kim; Soon Yong Hwang; Jun Seok Byun; Mangesh S. Diware; Jun Young Kim; Young Dong Kim


Thin Solid Films | 2013

Optical properties and photo-oxidative degradation of regioregular poly(3-butylthiophene) films by spectroscopic ellipsometry

Mangesh S. Diware; Tae Jung Kim; Jun Seok Byun; Soon Yong Hwang; Nilesh Barange; Young Dong Kim


Current Applied Physics | 2017

Characterization of wafer-scale MoS2 and WSe2 2D films by spectroscopic ellipsometry

Mangesh S. Diware; Kyunam Park; Jihun Mun; Han Gyeol Park; Won Chegal; Yong Jai Cho; Hyun Mo Cho; J. Park; Hyungjun Kim; Sang Woo Kang; Young Dong Kim


Thin Solid Films | 2013

Analytic representation of the dielectric functions of InAsxSb1 − x alloys in the parametric model

Soon Yong Hwang; Tae-Woong Kim; Jun Seok Byun; Nilesh Barange; Mangesh S. Diware; Y. D. Kim; D. E. Aspnes; Jin-Kook Yoon; J. D. Song


Bulletin of the American Physical Society | 2018

Electronic Structure Dependent Electrocatalytic Activity in Perovskite Ruthenate Epitaxial Thin Films

Sang A Lee; Jegon Lee; Seokjae Oh; Suyoun Lee; Jong-Seong Bae; Won Chegal; Mangesh S. Diware; Sungkyun Park; Taekjib Choi; Woo Seok Choi

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Won Chegal

Korea Research Institute of Standards and Science

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Yong Jai Cho

Korea Research Institute of Standards and Science

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