Marco Balucani

MEMS-Based Conjugate Surfaces Flexure Hinge

This paper presents a new concept flexure hinge for MEMS applications and reveals how to design, construct, and experimentally test. This hinge combines a curved beam, as a flexible element, and a pair of conjugate surfaces, whose contact depends on load conditions. The geometry is conceived in such a way that minimum stress conditions are maintained within the flexible beam. A comparison of the new design with the other kind of revolute and flexible joints is presented. Then, the static behavior of the hinge is analyzed by means of a theoretical approach, based on continuum mechanics, and the results are compared to those obtained by means of finite element analysis (FEA) simulation. A silicon hinge prototype is also presented and the construction process, based on single step lithography and reactive ion etching (RIE) technology, is discussed. Finally, a crucial in–SEM experiment is performed and the experimental results are interpreted through the theoretical models.

A Class-AB/D Audio Power Amplifier for Mobile Applications Integrated Into a 2.5G/3G Baseband Processor

A filterless class-AB/D audio power amplifier integrated into a feature-rich 2.5G/3G baseband processor in standard 65-nm CMOS technology is designed for direct battery hookup in mobile phone applications. Circuit techniques are used to overcome the voltage limitations of standard MOS transistors for operation at voltage levels of 2.5-4.8 V. Both amplifiers can drive more than 650 mW into an 8-¿ load with maximum distortion levels of 1% and 5% for class-D and class-AB, respectively, all from a 3.6-V power supply. The achieved power-supply-rejection ratios are 72 and 84 dB, respectively. The mono implementation of both amplifiers together is 0.44 mm2 .

Multilayer structures induced by plasma and laser beam treatments on a-Si:H and a-SiC:H thin films

Si/SiH/CN x and Si/SiC/CN x film structures have been obtained in a two step procedure: a-Si:H and a-SiC:H thin films have been deposited by PECVD from CH 4 /SiH 4 precursors; CN x films have been prepared by exposing the previous obtained samples to a RF plasma beam discharge generated in nitrogen with graphite electrodes. Several samples were submitted to KrF laser irradiation and treated at various incident laser fluences. The samples have been investigated by in depth X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and X-Ray Diffraction (XRD). Chemical and structural modifications are induced by the treatments. The promotion of Si-C bonds and the build-up of an intermediate SiCN layer at the a-Si:H/CN x and a-SiC:H/CN x interfaces are proven.

Development of Micro-Grippers for Tissue and Cell Manipulation with Direct Morphological Comparison

Although tissue and cell manipulation nowadays is a common task in biomedical analysis, there are still many different ways to accomplish it, most of which are still not sufficiently general, inexpensive, accurate, efficient or effective. Several problems arise both for in vivo or in vitro analysis, such as the maximum overall size of the device and the gripper jaws (like in minimally-invasive open biopsy) or very limited manipulating capability, degrees of freedom or dexterity (like in tissues or cell-handling operations). This paper presents a new approach to tissue and cell manipulation, which employs a conceptually new conjugate surfaces flexure hinge (CSFH) silicon MEMS-based technology micro-gripper that solves most of the above-mentioned problems. The article describes all of the phases of the development, including topology conception, structural design, simulation, construction, actuation testing and in vitro observation. The latter phase deals with the assessment of the function capability, which consists of taking a series of in vitro images by optical microscopy. They offer a direct morphological comparison between the gripper and a variety of tissues.

On-chip THz 3D antennas

In this work a new class of integrated 3D antennas is presented: the u-helix antenna class. U-helix is a truncated conical helix built using a novel MEMS (micro electro mechanical systems) technology directly realized on a silicon substrate, extruded from a planar spiral. The antenna is characterized by high gain (>;6 dBi) and wide fractional bandwidth (0.4) in the 100 GHz to 1 THz frequency range. Fabrication processes of the antenna and simulated performances are reported, and its possible use in a THz rectifying device is presented.

The development of a MEMS/NEMS-based 3 D.O.F. compliant micro robot

Microrobots are used nowadays in several fields of application, specially in mini invasive surgery. However, they are rather difficult to be constructed, and the traditional micro machining tools are not adequate yet to built the smaller parts. The construction of the microrobots is even harder if more than one D.O.F. are required for the mechanism, because these systems are more complicated. This paper deals with the development of a 3 D.O.F. planar micro platform with remote system of actuation. The new approach of design and manufacturing is based on two innovative solutions: a) the adoption of the technologies used to built MEMS, Micro Electro Mechanical Systems; b) the introduction of new flexural hinge to develop compliant micro mechanisms. The new concept of flexural hinge is described in the paper, also from a theoretical point of view. Several example of possible structures are proposed and analyzed, together with their remote wire actuation systems. Finite Element Analysis (FEA) has been also adopted to analyze the system performance under small deformations. The principle of fabrication is, then, described. The process consists of a sequence of single steps which have allowed to achieved an overall maximum size down to 3–4 mm and the minimum thickness of the smaller components down to 50µm.

Properties of ZrO2 thin films prepared by laser ablation

Abstract ZrO2 thin films have been prepared by laser ablation of Zr or ZrO2 targets in oxygen reactive atmosphere. The influence of the deposition parameters as oxygen pressure and target composition on the structure and morphology of the deposited layers has been studied. Scanning electron microscopy, secondary ion mass spectroscopy and dielectric constant measurements have been performed to characterize the deposited layers. Dielectric constant values in the range 15–20 and low losses were evidenced for samples prepared in a narrow range of experimental conditions.

Porous Silicon: A Buffer Layer for PbS Heteroepitaxy

In the present work, we report on the heteroepitaxial growth of PbS on porous silicon (PS). Epitaxial PbS films were grown by MBE on the surface of PS formed on the n+-type silicon (111) substrate. The films were comparable with films grown on BaF2 substrates. Beneficial influence of a PS buffer layer on the structure and properties of PbS epitaxial films was supported by implementation of sensitive Schottky-barrier photodiodes fabricated in these films.

Oxidized Porous Silicon: From Dielectric Isolation to Integrated Optical Waveguides

A brief review of 20-years research of formation, processing and utilizing of oxidized porous silicon (OPS) is presented. Electrolytes to form porous silicon (PS) layers, special features of PS chemical cleaning and thermal oxidation are discussed. OPS application for dielectric isolation of components of bipolar ICs and for the formation of silicon-on-insulator structures has been demonstrated. Although these OPS-based techniques have found limited current commercial use, experience gained is applicable to the fabrication of optoelectronic devices. Specifically, integrated optical waveguides based on OPS have been developed.

Nanostructures formed by displacement of porous silicon with copper: from nanoparticles to porous membranes

The application of porous silicon as a template for the fabrication of nanosized copper objects is reported. Three different types of nanostructures were formed by displacement deposition of copper on porous silicon from hydrofluoric acid-based solutions of copper sulphate: (1) copper nanoparticles, (2) quasi-continuous copper films, and (3) free porous copper membranes. Managing the parameters of porous silicon (pore sizes, porosity), deposition time, and wettability of the copper sulphate solution has allowed to achieve such variety of the copper structures. Elemental and structural analyses of the obtained structures are presented. Young modulus measurements of the porous copper membrane have been carried out and its modest activity in surface enhanced Raman spectroscopy is declared.