Marco Gavagnin

Atomic layer deposition and characterization of vanadium oxide thin films

In this study, VOx films were grown by atomic layer deposition (ALD) using V(NEtMe)4 as the vanadium precursor and either ozone or water as the oxygen source. V(NEtMe)4 is liquid at room temperature and shows good evaporation properties. The growth was investigated at deposition temperatures from as low as 75 °C, up to 250 °C. When using water as the oxygen source, a region of constant growth rate (ca. 0.8 A/cycle) was observed between 125 and 200 °C, with the ozone process the growth rate was significantly lower (0.31–0.34 A/cycle). The effect of the process conditions and post-deposition annealing on the film structure was investigated. By varying the atmosphere under which the films were annealed, it was possible to preferably form either VO2 or V2O5. Atomic force microscopy revealed that the films were smooth (rms < 0.5 nm) and uniform. The composition and stoichiometry of the films were determined by X-ray photoelectron spectroscopy. Conformal deposition was achieved in demanding high aspect ratio structure.

Synthesis of individually tuned nanomagnets for Nanomagnet Logic by direct write focused electron beam induced deposition.

Nanomagnet Logic (NML) is a promising new technology for future logic which exploits interactions among magnetic nanoelements in order to encode and compute binary information. This approach overcomes the well-known limits of CMOS-based microelectronics by drastically reducing the power consumption of computational systems and by offering nonvolatility. An actual key challenge is the nanofabrication of such systems that, up to date, are prepared by complex multistep processes in planar technology. Here, we report the single-step synthesis of NML key elements by focused electron beam induced deposition (FEBID) using iron pentacarbonyl as a gas precursor. The resulting nanomagnets feature an inner iron part and a 3 nm iron oxide cover (core-shell structure). Full functionality of conventional NML gates from FEBID-nanowires was achieved. An advanced structure maintaining the gate functionality based on bended nanowires was realized. The unique design obtained by direct-writing reduces the error probability and may merge several NWs in future NML elements.

Direct-Write Deposition and Focused-Electron-Beam-Induced Purification of Gold Nanostructures

Three-dimensional gold (Au) nanostructures offer promise in nanoplasmonics, biomedical applications, electrochemical sensing and as contacts for carbon-based electronics. Direct-write techniques such as focused-electron-beam-induced deposition (FEBID) can provide such precisely patterned nanostructures. Unfortunately, FEBID Au traditionally suffers from a high nonmetallic content and cannot meet the purity requirements for these applications. Here we report exceptionally pure pristine FEBID Au nanostructures comprising submicrometer-large monocrystalline Au sections. On the basis of high-resolution transmission electron microscopy results and Monte Carlo simulations of electron trajectories in the deposited nanostructures, we propose a curing mechanism that elucidates the observed phenomena. The in situ focused-electron-beam-induced curing mechanism was supported by postdeposition ex situ curing and, in combination with oxygen plasma cleaning, is utilized as a straightforward purification method for planar FEBID structures. This work paves the way for the application of FEBID Au nanostructures in a new generation of biosensors and plasmonic nanodevices.

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

Using a generalized extraction method, the fixed charge density Nint at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage Vth of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted Nint is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in Vth = +1 V. Fabrication of a gate stack with Al2O3 as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al2O3 interface.

Free-Standing Magnetic Nanopillars for 3D Nanomagnet Logic

Nanomagnet logic (NML) is a relatively new computation technology that uses arrays of shape-controlled nanomagnets to enable digital processing. Currently, conventional resist-based lithographic processes limit the design of NML circuitry to planar nanostructures with homogeneous thicknesses. Here, we demonstrate the focused electron beam induced deposition of Fe-based nanomaterial for magnetic in-plane nanowires and out-of-plane nanopillars. Three-dimensional (3D) NML was achieved based on the magnetic coupling between nanowires and nanopillars in a 3D array. Additionally, the same Fe-based nanomaterial was used to produce tilt-corrected high-aspect-ratio probes for the accurate magnetic force microscopy (MFM) analysis of the fabricated 3D NML gate arrays. The interpretation of the MFM measurements was supported by magnetic simulations using the Object Oriented MicroMagnetic Framework. Introducing vertical out-of-plane nanopillars not only increases the packing density of 3D NML but also introduces an extra magnetic degree of freedom, offering a new approach to input/output and processing functionalities in nanomagnetic computing.

Nitrogen as a carrier gas for regime control in focused electron beam induced deposition

Abstract This work reports on focused electron beam induced deposition (FEBID) using a custom built gas injection system (GIS) equipped with nitrogen as a gas carrier. We have deposited cobalt from Co2(CO)8, which is usually achieved by a heated GIS. In contrast to a heated GIS, our strategy allows avoiding problems caused by eventual temperature gradients along the GIS. Moreover, the use of the gas carrier enables a high control over process conditions and consequently the properties of the synthesized nanostructures. Chemical composition and growth rate are investigated by energy dispersive X-ray spectroscopy (EDX) and atomic force microscopy (AFM), respectively. We demonstrate that the N2 flux is strongly affecting the deposit growth rate without the need of heating the precursor in order to increase its vapour pressure. Particularly, AFM volume estimation of the deposited structures showed that increasing the nitrogen resulted in an enhanced deposition rate. The wide range of achievable precursor fluxes allowed to clearly distinguish between precursor- and electron-limited regime. With the carrier-based GIS an optimized deposition procedure with regards to the desired deposition regime has been enabled

Generation of 3D nanopatterns with smooth surfaces

Ga implantation into Si and reactive ion etching has been previously identified as candidate techniques for the generation of 3D nanopatterns. However, the structures manufactured using these techniques exhibited impedingly high surface roughness. In this work, we investigate the source of roughness and introduce a new patterning process to solve this issue. The novel patterning process introduces an additional layer absorbing the implanted Ga, thus preventing the clustering of the implanted Ga observed with uncoated Si substrates. This process enables 3D nanopatterning with sub-100 nm lateral resolution in conjunction with smooth height transitions and surface roughness down to 4 nm root mean square. Such patterns are ideally suited for optical applications and enable the manufacturing of nanoimprint lithography templates for low-profile Fresnel lenses.

Focused ion beam direct patterning of hardmask layers

Inorganic hardmasks are routinely employed in reactive ion etching (RIE) processes due to their excellent etch resistance. However, since pattern definition is commonly performed using organic resist materials, the enhanced etch resistance provided by the inorganic hardmasks comes at the expense of added process complexity. In this work, the authors introduce the method of direct patterning of hard masks (DPHM) utilizing milling and gas assisted deposition (GAD) with a focused ion beam (FIB). DPHM by FIB allows to structure hardmask materials, which are otherwise not accessible with standard processes. Further, it reduces the high number of (typically seven) processing steps required for resist based patterning down to only three using FIB milling of hardmasks or even two using FIB GAD for patterning. The authors found that by FIB milled hard masks made of oxide such as aluminum zinc oxide exhibited excellent pattern clarity. For other materials, effects such as ion beam induced dewetting were found to af...

Focused ion beam induced Ga-contamination—An obstacle for UV-nanoimprint stamp repair?

Ultravoilet (UV)-nanoimprint lithography (NIL) master stamps are subject to wear due to the mechanical nature of the imprint process. To extend the useful lifespan of expensive NIL master stamps, a focused ion beam repair process is highly desirable. Due to the inevitable Ga-staining induced by the focused ion beam processing the transmissivity of repaired NIL stamps is locally degraded. In this work, the authors investigate the impact of Ga-induced transmission losses on the imprint process. Experimental results indicate that the reduced transparency mainly impacts the amplitude of bow deformations in the imprint. These deformations are strongly enhanced by Ga-staining of the master stamp. The authors present a method for quantification of such bow-deformations. The introduced bowing-factor allows to make a qualified decision on whether the occurring deformation is acceptable for the target application. The authors have achieved control over the extent of the Ga-induced bow-deformation by tuning the UV-d...