Marco M. Furchi

Solar-energy conversion and light emission in an atomic monolayer p-n diode

The limitations of the bulk semiconductors currently used in electronic devices-rigidity, heavy weight and high costs--have recently shifted the research efforts to two-dimensional atomic crystals such as graphene and atomically thin transition-metal dichalcogenides. These materials have the potential to be produced at low cost and in large areas, while maintaining high material quality. These properties, as well as their flexibility, make two-dimensional atomic crystals attractive for applications such as solar cells or display panels. The basic building blocks of optoelectronic devices are p-n junction diodes, but they have not yet been demonstrated in a two-dimensional material. Here, we report a p-n junction diode based on an electrostatically doped tungsten diselenide (WSe2) monolayer. We present applications as a photovoltaic solar cell, a photodiode and a light-emitting diode, and obtain light-power conversion and electroluminescence efficiencies of ∼ 0.5% and ∼ 0.1%, respectively. Given recent advances in the large-scale production of two-dimensional crystals, we expect them to profoundly impact future developments in solar, lighting and display technologies.

Microcavity-Integrated Graphene Photodetector

There is an increasing interest in using graphene1,2 for optoelectronic applications.3−19 However, because graphene is an inherently weak optical absorber (only ≈2.3% absorption), novel concepts need to be developed to increase the absorption and take full advantage of its unique optical properties. We demonstrate that by monolithically integrating graphene with a Fabry-Pérot microcavity, the optical absorption is 26-fold enhanced, reaching values >60%. We present a graphene-based microcavity photodetector with responsivity of 21 mA/W. Our approach can be applied to a variety of other graphene devices, such as electro-absorption modulators, variable optical attenuators, or light emitters, and provides a new route to graphene photonics with the potential for applications in communications, security, sensing and spectroscopy.

Photovoltaic effect in an electrically tunable van der Waals heterojunction.

Semiconductor heterostructures form the cornerstone of many electronic and optoelectronic devices and are traditionally fabricated using epitaxial growth techniques. More recently, heterostructures have also been obtained by vertical stacking of two-dimensional crystals, such as graphene and related two-dimensional materials. These layered designer materials are held together by van der Waals forces and contain atomically sharp interfaces. Here, we report on a type-II van der Waals heterojunction made of molybdenum disulfide and tungsten diselenide monolayers. The junction is electrically tunable, and under appropriate gate bias an atomically thin diode is realized. Upon optical illumination, charge transfer occurs across the planar interface and the device exhibits a photovoltaic effect. Advances in large-scale production of two-dimensional crystals could thus lead to a new photovoltaic solar technology.

Mechanisms of Photoconductivity in Atomically Thin MoS2

Atomically thin transition metal dichalcogenides have emerged as promising candidates for sensitive photodetection. Here, we report a photoconductivity study of biased mono- and bilayer molybdenum disulfide field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photogain. The photovoltaic effect is described as a shift in transistor threshold voltage due to charge transfer from the channel to nearby molecules, including SiO2 surface-bound water. The photoconductive effect is attributed to the trapping of carriers in band tail states in the molybdenum disulfide itself. A simple model is presented that reproduces our experimental observations, such as the dependence on incident optical power and gate voltage. Our findings offer design and engineering strategies for atomically thin molybdenum disulfide photodetectors, and we anticipate that the results are generalizable to other transition metal dichalcogenides as well.

Silver nanoisland enhanced Raman interaction in graphene

Graphene shows great potential for optoelectronic applications but suffers from rather weak interaction with light due its single-atomic thickness. Here, we report the enhanced interaction of graphene and light for Raman transitions using localized surface plasmons. The plasmons are generated in silver nanoislands that we fabricate by simple means of metal deposition on top of graphene. Despite the broad size distribution of the nanoislands, we find a 100-fold enhancement of the Raman signal. We provide an analytical model for the description of the optical properties and obtain the scattering cross section as well as enhancement factors for the Raman transitions. In addition, we investigate, both optically and electrically, the doping that is introduced by the nanoislands.

A MoTe 2 -based light-emitting diode and photodetector for silicon photonic integrated circuits

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors

The commonly observed hysteresis in the transfer characteristics of MoS2 transistors is typically associated with charge traps in the gate insulator. Since in Si technologies such traps can lead to severe reliability issues, we perform a combined study of both the hysteresis as well as the arguably most important reliability issue, the bias-temperature instability. We use single-layer MoS2 FETs with SiO2 and hBN insulators and demonstrate that both phenomena are indeed due to traps in the gate insulator with time constants distributed over wide timescales, where the faster ones lead to hysteresis and the slower ones to bias-temperature instabilities. Our data show that the use of hBN as a gate insulator considerably reduces the number of accessible slow traps and thus improves the reliability. However, the reliability of hBN insulators deteriorates with increasing temperature due to the thermally activated nature of charge trapping.

Photovoltaics in Van der Waals Heterostructures

The peculiar nature of light-matter interaction in atomically thin transition metal dichalcogenides is recently under examination for application in novel optoelectronic devices. Here, we show that heterostructures composed of two or more such layers can be used for solar energy harvesting. The strong absorption in these atomically thin layers makes it possible to achieve an efficient power conversion with a minimal amount of active material. We describe in detail two different fabrication techniques that allow to realize heterostructures with clean, atomically sharp interfaces. The observed electrical and photovoltaic properties are analyzed. Our findings suggest that, accompanied by the advances in large area fabrication of atomically thin transition metal dichalcogenides, van der Waals heterostructures are promising candidates for a new generation of excitonic solar cells.

Electric field modulation of thermovoltage in single-layer MoS2

We study electric field modulation of the thermovoltage in single-layer MoS2. The Seebeck coefficient generally increases for a diminishing free carrier concentration, and in the case of single-layer MoS2 reaches considerable large values of about S = −5160 μV/K at a resistivity of 490 Ω m. Further, we observe time dependent degradation of the conductivity in single layer MoS2, resulting in variations of the Seebeck coefficient. The degradation is attributable to adsorbates from ambient air, acting as p-dopants and additional Coulomb potentials, resulting in carrier scattering increase, and thus decrease of the electron mobility. The corresponding power factors remain at moderate levels, due to the low conductivity of single layer MoS2. However, as single-layer MoS2 has a short intrinsic phonon mean free path, resulting in low thermal conductivity, MoS2 holds great promise as high-performance 2D thermoelectric material.

Device physics of van der Waals heterojunction solar cells

Two-dimensional group-VI transition metal dichalcogenide semiconductors, such as MoS2, WSe2 and others, exhibit strong light-matter coupling and possess direct band gaps in the infrared and visible spectral regimes, making them potentially interesting candidates for various applications in optics and optoelectronics. Here, we review their optical and optoelectronic properties with emphasis on exciton physics and devices. As excitons are tightly bound in these materials and dominate the optical response even at room-temperature, their properties are examined in depth in the first part of this article. We discuss the remarkably versatile excitonic landscape, including bright, dark, localized and interlayer excitons. In the second part, we provide an overview on the progress in optoelectronic device applications, such as electrically driven light emitters, photovoltaic solar cells, photodetectors and opto-valleytronic devices, again bearing in mind the prominent role of excitonic effects. We conclude with a brief discussion on challenges that remain to be addressed to exploit the full potential of transition metal dichalcogenide semiconductors in possible exciton-based applications.Heterostructures based on atomically thin semiconductors are considered a promising emerging technology for the realization of ultrathin and ultralight photovoltaic solar cells on flexible substrates. Much progress has been made in recent years on a technological level, but a clear picture of the physical processes that govern the photovoltaic response remains elusive. Here, we present a device model that is able to fully reproduce the current–voltage characteristics of type-II van der Waals heterojunctions under optical illumination, including some peculiar behaviors such as exceedingly high ideality factors or bias-dependent photocurrents. While we find the spatial charge transfer across the junction to be very efficient, we also find a considerable accumulation of photogenerated carriers in the active device region due to poor electrical transport properties, giving rise to significant carrier recombination losses. Our results are important to optimize future device architectures and increase power conversion efficiencies of atomically thin solar cells.Device physics: photovoltaic response of van der Waals heterojunctionsThe photophysics of van der Waals heterojunctions can be captured by a transport equation fully reproducing their photovoltaic response. A team led by Thomas Mueller at Vienna University of Technology presented an experimental study of a MoS2/WSe2 van der Waals heterostructure along with a device model capable of fully reproducing the current-voltage characteristics of type-II van der Waals heterojunctions under optical illumination. The model is able to capture some peculiar behaviors occurring in heterostructures of atomically thin transition metal dichalcogenides, including their high ideality factors and bias-dependent photocurrents. As a result, a modified transport equation should be used to describe their photovoltaic response, instead of the commonly used Shockley equation. These results pave the way to the optimization of future device architectures for photovoltaic applications.