Maria F. Ebel

On the influence of surface-roughness on X-ray photoelectron intensities

Abstract Surface roughness decreases the fluorescent intensities in XRFA (X-ray fluorescence analysis). We expect the same influence for XPS (X-ray photoelectron spectrometry). Therefore, the cube model, which was applied successfully to XRFA, is used for a quantitative description in the case of XPS as well. In spite of the fact that the agreement between theory and experiment for XPS is not as good as it was for XRFA, we learn that sample preparation should be a careful polishing procedure, which is sufficient to get results not influenced by surface roughness.

Quantitative analysis of binary alloys by XPS

Abstract A rapid method for a quantitative analysis of a multielement alloy is discussed. This method is independent of surface-roughness and contaminations. Co

Determination of the accuracy of binding energies measured by X-ray photoelectron spectrometer without retarding field

Abstract In X-ray photoelectron spectrometry where a retarding potential is not used, the relativistic mass increase of the photoelectrons with energy has to be taken into account 1. By measuring a specific photoelectron energy with the sample set at various potentials with respect to the spectrometer entrance slit the rest energy EO can be determined. The mean value of EO obtained in the course of an extended series of measurements is within 1 % of the literature value. In addition the experimental results provide information about the accuracy of the quantity ( hv - Eb - W), a term characteristic for XPS-measurements. For the experiments described in this paper the σ-limit was ±0.1 eV.

Photoelektronenspektrometrische Untersuchungen an auf Glas aufgedampften Metallschichten

Die Rontgenphotoelektronenspektrometrie kann im Zusammenhang mit dunnen Aufdampfschichten zur Untersuchung von Dunnschichtphanomenen, wie Inselbildung und Dichtedefekt herangezogen werden1. Weitere Anwendungen ergeben sich im Zusammenhang mit der theoretischen Behandlung der Photoelektronenausbeute unter vorgegebenen Bedingungen2. Daraus resultiert die Moglichkeit der Bestimmung von inelastischen Elektronenstreukoeffizienten1,3–5, oder die bisher noch nicht behandelte Bestimmung der Massenbelegung dunner Schichten bzw. die Konzentrationsbestimmung an dunnen Legierungsschichten. Der erfasbare Schichtdickenbereich erstreckt sich dabei von Null bis maximal 10 nm. Die folgenden Ausfuhrungen beschaftigen sich mit dieser neuartigen Anwendung der Rontgen-photoelektronenspektrometrie.