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Dive into the research topics where Mario Kupnik is active.

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Featured researches published by Mario Kupnik.


internaltional ultrasonics symposium | 2008

Analytically calculating membrane displacement and the equivalent circuit model of a circular CMUT cell

Ira O. Wygant; Mario Kupnik; Butrus T. Khuri-Yakub

A small-signal equivalent circuit model and FEM often guide CMUT design. The small-signal model is usually derived using a combination of numerical and FEM analysis. A strictly analytical approach to CMUT design is desired because it provides design intuition and efficient numerical analysis. In this paper, we show that the mass-spring-damper model used for many MEMS structures accurately captures the behavior of a CMUT with a circular plate. We provide equations for the CMUTs equivalent mass-spring-damper parameters, pull-in point, and equivalent circuit parameters. Comparison with FEM shows that the model accurately captures the CMUTs behavior for a wide range of designs. Using this model, we can derive simple design equations, calculate the small-signal model for frequency response simulations,. and simulate the CMUTs large-signal transient behavior.


IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control | 2009

50 kHz capacitive micromachined ultrasonic transducers for generation of highly directional sound with parametric arrays

Ira O. Wygant; Mario Kupnik; Jeffry C. Windsor; Wayne M. Wright; Mark S. Wochner; Goksen G. Yaralioglu; Mark F. Hamilton; Butrus T. Khuri-Yakub

In this study, we examine the use of capacitive micromachined ultrasonic transducers (CMUTs) with vacuum- sealed cavities for transmitting directional sound with parametric arrays. We used finite element modeling to design CMUTs with 40-mum- and 60-mum-thick membranes to have resonance frequencies of 46 kHz and 54 kHz, respectively. The wafer bonding approach used to fabricate the CMUTs provides good control over device properties and the capability to fabricate CMUTs with large diameter membranes and deep cavities. Each CMUT is 8 cm in diameter and consists of 284 circular membranes. Each membrane is 4 mm in diameter. Characterization of the fabricated CMUTs shows they have center frequencies of 46 kHz and 55 kHz and 3 dB bandwidths of 1.9 kHz and 5.3 kHz for the 40-mum- and 60-mum-thick membrane devices, respectively. With dc bias voltages of 380 V and 350 V and an ac excitation of 200 V peak-to-peak, the CMUTs generate average sound pressure levels, normalized to the devices surface, of 135 dB and 129 dB (re 20 muPa), respectively. When used to generate 5 kHz sound with a parametric array, we measured sound at 3 m with a 6 dB beamwidth of 8.7deg and a sound pressure level of 58 dB. To understand how detector nonlinearity (e.g., the nonlinearity of the microphone used to make the sound level measurements) affects the measured sound pressure level, we made measurements with and without an acoustic low-pass filter placed in front of the microphone; the measured sound levels agree with numerical simulations of the pressure field. The results presented in this paper demonstrate that large-area CMUTs, which produce high-intensity ultrasound, can be fabricated for transmitting directional sound with parametric arrays.


IEEE\/ASME Journal of Microelectromechanical Systems | 2011

Fabrication of Capacitive Micromachined Ultrasonic Transducers via Local Oxidation and Direct Wafer Bonding

Kwan Kyu Park; Hyunjoo J. Lee; Mario Kupnik; Butrus T. Khuri-Yakub

We present the successful fabrication of capacitive micromachined ultrasonic transducers (CMUTs) with an improved insulation layer structure. The goal is to improve device reliability (electrical breakdown) and device performance (reduced parasitic capacitance). The fabrication is based on consecutive thermal oxidation steps, on local oxidation of silicon (LOCOS), and on direct wafer bonding. No chemical-mechanical polishing step is required during the device fabrication. Aside from the advantages associated with direct wafer bonding for CMUT fabrication (simple fabrication, cell shape flexibility, wide gap height range, good uniformity, well-known material properties of single-crystal materials, and low intrinsic stress), the main vertical dimension (electrode separation) is determined by thermal oxidation only, which provides excellent vertical tolerance control ( <;10 nm) and unprecedented uniformity across the wafer. Thus, we successfully fabricated CMUTs with gap heights as small as 40 nm with a uniformity of ±2 nm over the entire wafer. This paper demonstrates that reliable parallel-plate electrostatic actuators and sensors with gap heights in the tens of nanometer range can be realized via consecutive thermal oxidation steps, LOCOS, and direct wafer bonding without chemical-mechanical polishing steps.


IEEE Transactions on Biomedical Engineering | 2010

Capacitive Micromachined Ultrasonic Transducers for Therapeutic Ultrasound Applications

Serena H. Wong; Mario Kupnik; Ronald Dean Watkins; Kim Butts-Pauly; Butrus T. Khuri-Yakub

Therapeutic ultrasound guided by MRI is a noninvasive treatment that potentially reduces mortality, lowers medical costs, and widens accessibility of treatments for patients. Recent developments in the design and fabrication of capacitive micromachined ultrasonic transducers (CMUTs) have made them competitive with piezoelectric transducers for use in therapeutic ultrasound applications. In this paper, we present the first designs and prototypes of an eight-element, concentric-ring, CMUT array to treat upper abdominal cancers. This array was simulated and designed to focus 30-50 mm into tissue, and ablate a 2- to 3-cm-diameter tumor within 1 h. Assuming a surface acoustic output pressure of 1 MPa peak-to-peak (8.5 W/cm2) at 2.5 MHz, we simulated an array that produced a focal intensity of 680 W/cm2 when focusing to 35 mm. CMUT cells were then designed to meet these frequency and surface acoustic intensity specifications. These cell designs were fabricated as 2.5 mm x 2.5 mm test transducers and used to verify our models. The test transducers were shown to operate at 2.5 MHz with an output pressure of 1.4 MPa peak-to-peak (16.3 W/cm2). With this CMUT cell design, we fabricated a full eight-element array. Due to yield issues, we only developed electronics to focus the four center elements of the array. The beam profile of the measured array deviated from the simulated one because of the crosstalk effects; the beamwidth matched within 10% and sidelobes increased by two times, which caused the measured gain to be 16.6 compared to 27.4.


Applied Physics Letters | 2007

Capacitive micromachined ultrasonic transducers for chemical detection in nitrogen

Kwan Kyu Park; Hoo-Jeong Lee; Goksen G. Yaralioglu; A.S. Ergun; Omer Oralkan; Mario Kupnik; C. F. Quate; Butrus T. Khuri-Yakub; Thomas Braun; J.-P. Ramseyer; Hans Peter Lang; Martin Hegner; Ch. Gerber; James K. Gimzewski

The authors present the prototype of a chemical sensor using a capacitive micromachined ultrasonic transducer array. Each element in the array consists of a large number of resonating membranes connected in parallel. A five-channel oscillator circuit operates at the resonant frequency around 6MHz in this prototype. The surface of the elements in the array is coated by polymers such as polyallylamine hydrochloride, polyethylene glycol, and polyvinyl alcohol to detect different chemicals. By measuring shift in oscillation frequencies due to the mass-loading effect, analytes, e.g., water and isopropanol, with concentrations around 20ppbv (parts per 109 by volume) range can be detected.


IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control | 2007

Finite element modeling and experimental characterization of crosstalk in 1-D CMUT arrays

Baris Bayram; Mario Kupnik; Goksen G. Yaralioglu; Omer Oralkan; A.S. Ergun; Serena H. Wong; Butrus T. Khuri-Yakub

Crosstalk is the coupling of energy between the elements of an ultrasonic transducer array. This coupling degrades the performance of transducers in applications such as medical imaging and therapeutics. In this paper, we present an experimental demonstration of guided interface waves in capacitive micromachined ultrasonic transducers (CMUTs). We compare the experimental results to finite element calculations using a commercial package (LS-DYNA) for a 1-D CMUT array operating in the conventional and collapsed modes. An element in the middle of the array was excited with a unipolar voltage pulse, and the displacements were measured using a laser interferometer along the center line of the array elements immersed in soybean oil. We repeated the measurements for an identical CMUT array covered with a 4.5-mum polydimethyl-siloxane (PDMS) layer. The main crosstalk mechanism is the dispersive guided modes propagating in the fluid-solid interface. Although the transmitter element had a center frequency of 5.8 MHz with a 130% fractional bandwidth in the conventional operation, the dispersive guided mode was observed with the maximum amplitude at a frequency of 2.1 MHz, and had a cut-off frequency of 4 MHz. In the collapsed operation, the dispersive guided mode was observed with the maximum amplitude at a frequency of 4.0 MHz, and had a cut-off frequency of 10 MHz. Crosstalk level was lower in the collapsed operation (-39 dB) than in the conventional operation (-24.4 dB). The coverage of the PDMS did not significantly affect the crosstalk level, but reduced the phase velocity for both operation modes. Lamb wave modes, A0 and S0, were also observed with crosstalk levels of -40 dB and -65 dB, respectively. We observed excellent agreement between the finite element and the experimental results


IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control | 2009

Wafer-bonded 2-D CMUT arrays incorporating through-wafer trench-isolated interconnects with a supporting frame

Xuefeng Zhuang; Ira O. Wygant; Der-Song Lin; Mario Kupnik; Omer Oralkan; Butrus T. Khuri-Yakub

This paper reports on wafer-bonded, fully populated 2-D capacitive micromachined ultrasonic transducer (CMUT) arrays. To date, no successful through-wafer via fabrication technique has been demonstrated that is compatible with the wafer-bonding method of making CMUT arrays. As an alternative to through-wafer vias, trench isolation with a supporting frame is incorporated into the 2-D arrays to provide through-wafer electrical connections. The CMUT arrays are built on a silicon-on-insulator (SOI) wafer, and all electrical connections to the array elements are brought to the back side of the wafer through the highly conductive silicon substrate. Neighboring array elements are separated by trenches on both the device layer and the bulk silicon. A mesh frame structure, providing mechanical support, is embedded between silicon pillars, which electrically connect to individual elements. We successfully fabricated a 16 times 16-element 2-D CMUT array using wafer bonding with a yield of 100%. Across the array, the pulse-echo amplitude distribution is uniform (sigma = 6.6% of the mean amplitude). In one design, we measured a center frequency of 7.6 MHz, a peak-to-peak output pressure of 2.9 MPa at the transducer surface, and a 3-dB fractional bandwidth of 95%. Volumetric ultrasound imaging was demonstrated by chip-to-chip bonding one of the fabricated 2-D arrays to a custom-designed integrated circuit (IC). This study shows that through-wafer trench-isolation with a supporting frame is a viable solution for providing electrical interconnects to CMUT elements and that 2-D arrays fabricated using wafer-bonding deliver good performance.


IEEE Spectrum | 2009

Next-gen ultrasound

Butrus T. Khuri-Yakub; Omer Oralkan; Mario Kupnik

Almost invariably, a new babys photo album begins with a grainy black-and-white picture taken months before birth - a prenatal ultrasound image, which is often detailed enough to inspire comments about the childs resemblance to various members of the family. But jokes about balding uncles notwithstanding, such scans serve a serious purpose and can prove immensely important, as when they allow doctors to diagnose and sometimes even repair a congenital malformation while the baby is still in the womb.


IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control | 2006

Experimental characterization of collapse-mode CMUT operation

Omer Oralkan; Baris Bayram; Goksen G. Yaralioglu; A.S. Ergun; Mario Kupnik; David T. Yeh; Ira O. Wygant; Butrus T. Khuri-Yakub

This paper reports on the experimental characterization of collapse-mode operation of capacitive micromachined ultrasonic transducers (CMUTs). CMUTs are conventionally operated by applying a direct current (DC) bias voltage less than the collapse voltage of the membrane, so that the membrane is deflected toward the bottom electrode. In the conventional regime, there is no contact between the membrane and the substrate; the maximum alternating current (AC) displacement occurs at the center of the membrane. In collapse-mode operation, the DC bias voltage is first increased beyond the collapse voltage, then reduced without releasing the collapsed membrane. In collapse-mode operation, the center of the membrane is always in contact with the substrate. In the case of a circular membrane, the maximum AC displacement occurs along the ring formed between the center and the edge of the membrane. The experimental characterization presented in this paper includes impedance measurements in air, pulse-echo experiments in immersion, and one-way optical displacement measurements in immersion for both conventional and collapse-mode operations. A 205-mum times 205-mum 2-D CMUT array element composed of circular silicon nitride membranes is used in the experiments. In pulse-echo experiments, a custom integrated circuit (IC) comprising a pulse driver, a transmit/receive switch, a wideband low-noise preamplifier, and a line driver is used. By reducing the parasitic capacitance, the use of a custom IC enables pulse-echo measurements at high frequencies with a very small transducer. By comparing frequency response and efficiency of the transducer in conventional and collapse regimes, experimental results show that a collapsed membrane can be used to generate and detect ultrasound more efficiently than a membrane operated in the conventional mode. Furthermore, the center frequency of the collapsed membrane can be changed by varying the applied DC voltage. In this study, the center frequency of a collapsed transducer in immersion is shown to vary from 20 MHz to 28 MHz with applied DC bias; the same transducer operates at 10 MHz in the conventional mode. In conventional mode, the maximum peak-to-peak pressure is 370 kPa on the transducer surface for a 40-ns, 25-V unipolar pulse excitation. In collapse mode, a 25-ns, 25-V unipolar pulse generates 590 kPa pressure at the surface of the transducer


IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control | 2008

Feasibility of MR-temperature mapping of ultrasonic heating from a CMUT

Serena H. Wong; Ronald Dean Watkins; Mario Kupnik; Kim Butts Pauly; Butrus T. Khuri-Yakub

In the last decade, high intensity focused ultrasound (HIFU) has gained popularity as a minimally invasive and noninvasive therapeutic tool for treatment of cancers, arrhythmias, and other medical conditions. HIFU therapy is often guided by magnetic resonance imaging (MM), which provides anatomical images for therapeutic device placement, temperature maps for treatment guidance, and postoperative evaluation of the region of interest. While piezoelectric transducers are dominantly used for MR-guided HIFU, capacitive micromachined ultrasonic transducers (CMUTs) show competitive advantages, such as ease of fabrication, integration with electronics, improved efficiency, and reduction of self-heating. In this paper, we will show our first results of an unfocused CMUT transducer monitored by MR-temperature maps. This 2.51 mm by 2.32 mm, unfocused CMUT heated a HIFU phantom by 14degC in 2.5 min. This temperature rise was successfully monitored by MR thermometry in a 3.0 T General Electric scanner.

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Roland Werthschützky

Technische Universität Darmstadt

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Omer Oralkan

North Carolina State University

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Christian Hatzfeld

Technische Universität Darmstadt

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Alexander Unger

Technische Universität Darmstadt

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Markus Hessinger

Technische Universität Darmstadt

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