Marjana Lezaic

Thermal Collapse of Spin Polarization in Half-Metallic Ferromagnets

We propose two novel approaches to study the temperature dependence of the magnetization and the spin polarization at the Fermi level in magnetic compounds, and apply them to half-metallic ferromagnets. We reveal a new mechanism, where the hybridization of states forming the half-metallic gap depends on thermal spin fluctuations and the polarization can drop abruptly at temperatures much lower than the Curie point. We verify this for NiMnSb by ab initio calculations. The thermal properties are studied by mapping ab initio results to an extended Heisenberg model which includes longitudinal fluctuations and is solved by a Monte Carlo method.

Interface properties of NiMnSb/InP and NiMnSb/GaAs contacts

We study the electronic and magnetic properties of the interfaces between the half-metallic Heusler alloy NiMnSb and the binary semiconductors InP and GaAs using two different state-of-the-art full-potential \textit{ab-initio} electronic structure methods. Although in the case of most NiMnSb/InP(001) contacts the half-metallicity is lost, it is possible to keep a high degree of spin-polarization when the interface is made up by Ni and P layers. In the case of the GaAs semiconductor the larger hybridization between the Ni-

Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO3 Thin Film Devices

d

Probing quasiparticle states bound by disparate periodic potentials

and As-

Domain wall engineering as a route towards room temperature multiferroicity

p

Metastable states of HfO2 suboxides and resistive switching

orbitals with respect to the hybridization between the Ni-

Ab initio characterization of magnetoelectric effect in GaFeO3

d

Nanosession: Multiferroics ‐ Ordering Phenomena

and P-

Nanosession: Interplay Between Strain and Electronic Structure in Metal Oxides

p

Exchange interactions and local moment fluctuation corrections at finite temperatures based on the full-potential linearized augmented plane wave method

orbitals destroys this polarization. The (111) interfaces present strong interface states but also in this case there are few interfaces presenting a high spin-polarization at the Fermi level which can reach values up to 74%.