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Publication
Featured researches published by Mark C. H. Lamorey.
Ibm Journal of Research and Development | 2006
Thomas M. Maffitt; John K. DeBrosse; John A. Gabric; Earl T. Gow; Mark C. H. Lamorey; John Stuart Parenteau; Dennis R. Willmott; Mark A. Wood; W. J. Gallagher
MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations. Topics covered include MRAM fundamentals, array architecture, several associated design studies, and scaling challenges. In addition, a 16-Mb MRAM demonstration vehicle is described, and performance results are presented.
Archive | 2008
Mark C. H. Lamorey
Archive | 2008
Mark C. H. Lamorey; Thomas M. Maffitt
Archive | 2009
Mark C. H. Lamorey
Archive | 2007
John K. DeBrosse; Thomas M. Maffitt; Mark C. H. Lamorey
Archive | 2008
Mark C. H. Lamorey
Archive | 2007
John K. De Brosse; Mark C. H. Lamorey
Archive | 2008
Mark C. H. Lamorey; Thomas M. Maffitt
Archive | 2007
Mark C. H. Lamorey; Thomas Happ
Archive | 2007
Mark C. H. Lamorey; Yu Lu; Janusz J. Nowak