Mark D. Bedzyk

High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process

We report on the fabrication and characterization of hydrogenated amorphous silicon (a-Si:H) films and n-i-p photodiodes on glass and PEN plastic substrates using low-temperature (150°C) plasma-enhanced chemical vapor deposition. Process conditions were optimized for the i-a-Si:H material which had a band gap of ~1.73 eV and low density of states (of the order 10 15 cm -3 ). Diodes with 0.5 μm i-layer demonstrate quantum efficiency ~70%. The reverse dark current of the diodes on glass and PEN plastic substrate is ~10-11 and below 10 -10 A/cm 2 , respectively. We discuss the difference in electrical characteristics of n-i-p diodes on glass and PEN in terms of bulk- and interface-state generation currents.