Mark DeVito

Mitigation of thermal lensing effect as a brightness limitation of high-power broad area diode lasers

Recent efforts to improve the reliability of high-power broad-area diode lasers operating in the 9xx nm wavelength band have yielded single emitter devices with excellent reliability to >15 W. However, in applications requiring fiber coupling, the fiber coupling power of a single emitter device is rather limited by its linear power density, and hence brightness of the device. Unfortunately, due to a rapid increase in the slow-axis divergence, a typical broad-area diode laser offers a much lower brightness increase and an earlier rollover than its output power. In this work, we show that thermal lensing (rather than carrier- or gain-induced guiding) in the slow axis is the predominant cause of beam quality degradation at increased driving current. Some of the techniques which are presented include the use of cavity length scaling and thermal path engineering. It is expected these approaches are critical to enabling continued scaling of highbrightness fiber coupled diode lasers.

85% power conversion efficiency 975-nm broad area diode lasers at − 50°C, 76 % at 10°C

Optimized single stripe 975-nm broad area devices deliver 76% power conversion efficiency at 10degC. Cooling the material leads to 85% efficiency at -50degC. External differential quantum efficiency is the dominant term.

Control of optical mode distribution through etched microstructures for improved broad area laser performance

Etching microstructures into broad area diode lasers is found to lead to more uniform near field and increased power conversion efficiency, arising from increased slope. Self-consistent device simulation indicates that this improvement is due to an increase in the effective internal injection efficiency above threshold—the nonuniform near field leads to regions of inefficient clamping of the carrier density in the laser stripe. Measurements of spontaneous emission through the substrate confirm the predicted carrier profile. Both experiment and theory show that improved overlap between carrier and power distributions correlates with improved slope.

Diode Laser Efficiency Increases Enable > 400-W Peak Power From 1-cm Bars and Show Clear Path to Peak Powers in Excess of 1-kW

Peak optical power from single 1-cm diode laser bars is advancing rapidly across all commercial wavelengths. Progress in material performance is reviewed and we show that current trends imply there is no fundamental barrier to achieving peak powers of 1-kW per 1-cm diode laser bar. For bars with such high peak powers, commercially available reliable devices would be expected to deliver ~ 300-W per bar. Progress to date has allowed us to demonstrate > 400-W peak output from single 1-cm diode laser bars at emission wavelengths from 800-nm to 980-nm. The available range of emission wavelengths has also been increased, with 90-W bars shown at 660-nm and 24W at 1900-nm, complementing the 100-W bar previously demonstrated at 1470-nm. Peak power is seen to correlate closely peak efficiency. Further advances in diode laser efficiency and low thermal resistance packaging technology continue to drive these powers higher. The most critical improvements have been the reduction in the diode laser operating voltage through optimization of hetero-barriers (leading to 73% efficient 100-W bars on copper micro-channel) and a reduction in packaging thermal resistance by optimizing micro-channel performance (leading to < 0.2-oC/W thermal resistance).

High reliability and high performance of 9xx-nm single emitter laser diodes

Improved performance and reliability of 9xx nm single emitter laser diodes are presented. To date, over 15,000 hours of accelerated multi-cell lifetest reliability data has been collected, with drive currents from 14A to 18A and junction temperatures ranging from 60°C to 110°C. Out of 208 devices, 14 failures have been observed so far. Using established accelerated lifetest analysis techniques, the effects of temperature and power acceleration are assessed. The Mean Time to Failure (MTTF) is determined to be >30 years, for use condition 10W and junction temperature 353K (80°C), with 90% statistical confidence.

Performance limitation and mitigation of longitudinal spatial hole burning in high-power diode lasers

Facets of high-power broad area diode lasers are typically coated with one high-reflecting and one partially reflecting layer to improve slope efficiency and maximize output power. The typical cavity lengths of commercial devices have also been progressively increasing, mainly to reduce temperature rise at the active region and improve laser performance and reliability. The asymmetric reflectivities and long cavity length, however, result in a highly inhomogeneous longitudinal profile of the photon density, which induces a spatially non-uniform carrier distribution, so-called longitudinal spatial hole burning (LSHB). A more uniform longitudinal photon and carrier distribution is believed to improve the overall gain of the cavity and reduce gain saturation, although further study is required to understand the impact of LSHB to power efficiency and its implication in laser design optimization to achieve higher peak powers. We present a phenomenological model that incorporates LSHB to describe longitudinal photon and carrier density inhomogeneity, as well as light-current characteristics of a diode laser. The impact of LSHB on the power efficiency is demonstrated through numerical calculation and can be significant under high-power operations. This presents new guidelines for high-power diode laser designs, in which LSHB imposes limits on reducing facet reflectivity and/or increasing cavity length, beyond which performance deteriorates. Alternatively, effects of LSHB can be mitigated through longitudinal patterning of the waveguide or contact to achieve high-power and high-efficiency diode lasers. We propose specially designed longitudinal patterning of electrical contact to mitigate LSHB. Ongoing device implementation will be used to demonstrate performance benefits.

Reliability and performance of 808-nm single emitter multi-mode laser diodes

Performance, lifetest data, as well as failure modes from two different device structures will be discussed in this paper, with emitting wavelengths from 780nm to 800nm. The first structure, designed for high temperature operation, has demonstrated good reliability on various packages with output power up to 10W from a 200μm emitting area. The device structure can be operated up to 60°C heatsink temperatures under CW conditions. Then a high efficiency structure is shown with further improvement on operation power and reliability, for room temperature operation. With ongoing lifetest at 12A and 50°C heatsink temperature, <1000 FIT has been achieved for 6.5W and 33°C operation, on both designs. MTT10%F at 10W and 25°C operation is estimated to be more than 20,000 hours. Devices retain more than 20W rollover power under CW conditions, when re-tested after several thousand hours of accelerated lifetest. Paths for reliability improvement will also be discussed based on observed lifetest failure modes from these two structures.

A CTE matched, hard solder, passively cooled laser diode package combined with nXLT facet passivation enables high power, high reliability operation

A conductively cooled laser diode package design with hard AuSn solder and CTE matched sub mount is presented. We discuss how this platform eliminates the failure mechanisms associated with indium solder. We present the problem of catastrophic optical mirror damage (COMD) and show that nLights nXLTTM facet passivation technology effectively eliminates facet defect initiated COMD as a failure mechanism for both single emitter and bar format laser diodes. By combining these technologies we have developed a product that has high reliability at high powers, even at increased operation temperatures. We present early results from on-going accelerated life testing of this configuration that suggests an 808nm, 30% fill factor device will have a MTTF of more than 21khrs at 60W CW, 25°C operating conditions and a MTTF of more than 6.4khrs when operated under hard pulsed (1 second on, 1 second off) conditions.

Extending the wavelength range of single-emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers

Diode lasers supply high power densities at wavelengths from 635-nm to 2000-nm, with different applications enabled by providing this power at different wavelengths. As the range of available wavelengths broadens, many novel medical and atmospheric applications are enabled. Traditional quantum well lasers provide high performance in the range 635- nm to 1100-nm range for GaAs-based devices and 1280-nm to 2000-nm for InP, leaving a notable gap in the 1100 to 1280-nm range. There are many important medical and sensing applications in this range and quantum dots produced using Stranski-Krastanow self-organized MBE growth on GaAs substrates provide an alternative high performance solution. We present results confirming broad area quantum dot lasers can deliver high optical powers of 16-W per emitter and high power conversion efficiency of 35% in this wavelength range. In addition, there are growing applications for high power sources in wavelengths > 1500-nm. We present a brief review of our current performance status in this wavelength range, both with conventional quantum wells in the 1500-nm to 2500-nm range and MOCVD grown quantum cascade lasers for wavelengths > 4000-nm. At each wavelength, we review the designs that deliver this performance, prospects for increased performance and the potential for further broadening the availability of novel wavelengths for high power applications.

High-efficiency high-power 808-nm laser array and stacked arrays optimized for elevated temperature operation

Operation of 808-nm laser diode pumps at elevated temperature is crucial to many applications. Reliable operation at high power is limited by high thermal load and low catastrophic optical mirror damage (COMD) threshold at elevated temperature range. We demonstrate high efficiency and high power operation at elevated temperatures with high COMD power. These results were achieved through device design optimization such as growth conditions, doping profile, and materials composition of the quantum-well and other layers. Electrical-to-optical efficiency as high as 62 percent was obtained through lowered threshold current and lowered series resistance and increased slope efficiency. The performance of single broad-area laser diodes scales to that of high power single bars on water-cooled copper micro-channel heatsinks or conductively-cooled CS heatsinks. No reduction in bar performance or significant spectral broadening is seen when these micro-channel coolers are assembled into 6-bar and 18-bar cw stacks for the highest power levels.