Martin Corfield

Built-in Reliability Design of Highly Integrated Solid-State Power Switches With Metal Bump Interconnects

A stacked substrate-chip-bump-chip-substrate assembly has been demonstrated in the construction of power switch modules with high power density and good electrical performance. In this paper, special effort has been devoted to material selection and geometric shape of the bumps in the design for improving the thermomechanical reliability of a highly integrated bidirectional switch. Results from 3-D finite-element simulation indicate that for all design cases the maximum von Mises stresses and creep strain accumulations occur in the solder joints used to join bumps on IGBTs during a realistic mission profile, but occur in the solder joints used to join bumps on DBC substrates during accelerated thermal cycling. The results from both the simulation and the accelerated thermal cycling experiments reveal that selection of Cu/Mo/Cu composite brick bumps in the stacked assembly can significantly improve the thermomechanical reliability of both the solder joints and the DBC substrates when compared to Cu cylinder bumps and Cu hollow cylinder bumps reported in previous work. Such results can be attributed to the effective reduction in the extent of mismatch of coefficients of thermal expansion between the different components in the assembly.

Unusual Observations in the Wear-Out of High-Purity Aluminum Wire Bonds Under Extended Range Passive Thermal Cycling

This paper reports on the reliability of ultrasonically wedge-bonded 99.99% (4N) and 99.999% (5N) pure aluminum wires under different passive thermal cycling ranges, namely, -40°C to 190°C, -60°C to 170°C, -35°C to 145 °C, and -55°C to 125°C. The rate of bond strength degradation during cycling was found to be more rapid in the wire bonds subjected to lower peak temperatures (Tjmax) and lower temperature ranges (ΔT) for both wire types. This observed effect of ΔT cannot be described by the commonly accepted empirical relationships based on damage accumulation, such as the Coffin-Manson law. In addition, the 4N wire bonds were found to degrade more rapidly than the 5N bonds under the cycling ranges investigated. Microstructural characterization and nanoindentation of the bond interfaces indicated differences in microstructural restoration in wires subjected to the different cycling ranges. These differences have been attributed to annealing phenomena occurring in the wires during the high-temperature phase of cycling, which are believed to remove some of the damage accumulated during the low-temperature phase. A model is proposed for the prediction of wire bond wear-out rate, which incorporates both damage accumulation and damage removal mechanisms. We conclude that the rate of annealing during cycling varies exponentially with temperature; the annealing effects which occur can reduce damage accumulation and therefore influence wire bond reliability.

Real-time degradation monitoring and lifetime estimation of 3D integrated bond-wire-less double-sided cooled power switch technologies

This paper introduces a methodology for real-time degradation monitoring and reliability assessment of novel sandwich-type integrated power switches during passive thermal cycling. The proposed approach enables to realistically monitor degradation from time zero, allowing the flexible definition of the most suitable failure criteria and test time.

Room-Temperature Nanoindentation Creep of Thermally Cycled Ultrasonically Bonded Heavy Aluminum Wires

Recent findings suggest that creep occurs during thermal cycling of ultrasonically bonded wires, the extent of which is influenced by the nature of the temperature cycle, particularly its peak temperature. In this work, this hypothesis is investigated through a study of the power-law creep behavior of bonded 375-μm aluminum wires that have been thermally cycled. Data from a study of two wire purity levels (99.999% and 99.99%) and two different cycling profiles (−55°C to 125°C and −60°C to 170°C) are presented. Room-temperature creep stress exponents are derived for the wire bonds from constant-load nanoindentation tests and compared with their respective microstructures.

Damage Evolution in Al Wire Bonds Subjected to a Junction Temperature Fluctuation of 30 K

Ultrasonically bonded heavy Al wires subjected to a small junction temperature fluctuation under power cycling from 40°C to 70°C were investigated using a non-destructive three-dimensional (3-D) x-ray tomography evaluation approach. The occurrence of irreversible deformation of the microstructure and wear-out under such conditions were demonstrated. The observed microstructures consist of interfacial and inter-granular cracks concentrated in zones of stress intensity, i.e., near heels and emanating from interface precracks. Interfacial voids were also observed within the bond interior. Degradation rates of ‘first’ and ‘stitch’ bonds are compared and contrasted. A correlative microscopy study combining perspectives from optical microscopy with the x-ray tomography results clarifies the damage observed. An estimation of lifetime is made from the results and discussed in the light of existing predictions.

Improved Reliability of Planar Power Interconnect With Ceramic-Based Structure

This paper proposes an advanced Si3N4 ceramic-based structure with through vias designed and filled with brazing alloy as a reliable interconnect solution in planar power modules. Finite-element (FE) modeling and simulation were first used to predict the potential of using the proposed Si3N4 ceramic-based structure to improve the heat dissipation and reliability of planar interconnects. Power cycling tests and nondestructive microstructural characterization were then performed on Si3N4 ceramic-based structures, flexible printed circuit boards (PCBs), and conventional Al wire interconnect samples to evaluate the FE predictions. Both the FE simulations and experimental tests were carried out on single Si diode samples where both the ceramic-based structures and flexible PCBs were bonded on the top sides of Si diodes with eutectic Sn-3.5Ag solder joints. The results obtained demonstrate that Si3N4 ceramic-based structures can significantly improve the reliability of planar interconnects. The experimental average lifetimes and FE simulated maximum creep strain accumulations for the ceramic-based structure and flexible PCB interconnect samples can reasonably be fitted to existing lifetime models for Sn-3.5Ag solder joints. Discrepancies between the models and experimental results can be attributed to defects and poor filling of the brazing alloy in the vias through the Si3N4 ceramic.

A thermal cycling reliability study of ultrasonically bonded copper wires

In this work we report on a reliability investigation regarding heavy copper wires ultrasonically bonded onto active braze copper substrates. The results obtained from both a non-destructive approach using 3D X-ray tomography and shear tests showed no discernible degradation or wear out from initial conditions to 2900 passive thermal cycles from − 55 to 125 °C. Instead, an apparent increase in shear strength is observed as the number of thermal cycles increases. Nanoindentation hardness investigations suggest the occurrence of cyclic hardening. Microstructural investigations of the interfacial morphologies before and after cycling and after shear testing are also presented and discussed.

Predicting Lifetime of Thick Al Wire Bonds Using Signals Obtained From Ultrasonic Generator

Routine monitoring of the wire bonding process requires real-time evaluation and control of wire bond quality. In this paper, we present a nondestructive technique for detecting bond quality by the application of a semisupervised classification algorithm to process the signals obtained from an ultrasonic generator. Experimental tests verified that the classification method is capable of accurately predicting bond quality, indicated by bonded area measured by X-ray tomography. Samples classified during bonding were subjected to temperature cycling between -55 °C and +125 °C, and the distribution of bond life amongst the different classes was analyzed. It is demonstrated that the as-bonded quality classification is closely correlated with thermal cycling life and can, therefore, be used as a nondestructive tool for monitoring bond quality and predicting useful service life.

Interconnect Materials Enabling IGBT Modules to Achieve Stable Short-Circuit Failure Behavior

Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have major applications in electricity network-related fields. Sn-3.5Ag solder joints and sintered Ag joints for the die attachment and Mo, Cu, Sn-3.5Ag, Al, and Ag foils for the top side insert (TSI) material in press pack like single IGBT samples have been investigated using overcurrent and current passage tests. The results reveal that Sn-3.5Ag solder joints in combination with Sn-3.5Ag, Al, or Ag foils can be employed to achieve stable short-circuit failure mode, where the best results are achieved with Ag foils. This can be attributed to the formation of conductive networks/channels through the failed IGBT and good alignment between the residual TSI material and the failed IGBT.