Martin Delaigue

Passively mode-locked diode-pumped Nd:YVO4 oscillator operating at ultra-low repetition rate

We demonstrate the operation of an ultralow-repetition-rate, high-peak-power, picosecond diode-pumped Nd:YVO4 passively mode-locked laser oscillator. Repetition rates lower than 1 MHz were achieved with the use of a new design for a multiple-pass cavity and a semiconductor saturable absorber. Long-term stable operation at 1.2 MHz with a pulse duration of 16.3 ps and an average output power of 470 mW, corresponding to 24-kW peak-power pulses, is reported. These are to our knowledge the lowest-repetition-rate high-peak-power pulses ever generated directly from apicosecond laser resonator without cavity dumping.

Short-pulse and high-repetition-rate diode-pumped Yb:CaF2 regenerative amplifier.

We present a diode-pumped regenerative amplifier based on an Yb:CaF(2) crystal optimized to produce short pulses for various repetition rates ranging from 100 Hz to 10 kHz. The shortest pulse duration generated is 178 fs, and the corresponding energy is 1.4 mJ before compression (620 microJ after), at a repetition rate of 500 Hz for 16 W of pump power. The bandwidth is 10 nm centered at 1040 nm. Higher repetition rate regimes have also been explored, allowing an optical-to-optical efficiency up to 10% at a high repetition rate.

Sub-100-fs Yb:CALGO nonlinear regenerative amplifier

We report on the first diode-pumped Yb:CaGdAlO4 regenerative amplifier in the sub-100-fs regime. It generates pulses at a central wavelength of 1047 nm with up to 24 μJ energy (after compression) at a repetition rate of 50 kHz. The measured pulse duration is 97 fs, with a spectral bandwidth of 19 nm. We describe in detail how nonlinear effects are optimally used to compensate gain narrowing in order to overcome the 100 fs barrier.

Comparison of picosecond and femtosecond laser ablation for surface engraving of metals and semiconductors

In order to minimize thermal load to the workpiece pico- and femtosecond lasers gain an increasing market share in industrial applications such as surface structuring or thin film selective ablation. Due to nonlinear absorption they are capable to process any type of material (dielectrics, semiconductors, metals) and provide an outstanding quality suppressing heat affects on the workpiece. In this paper, we report on results about surface engraving of metals (Al, Cu, Mo, Ni), semiconductor (Si) and polymer (PC) using a picosecond thin disk Yb:YAG-amplifier, which could be used in the picosecond regime as well as in the femtosecond regime by simply changing the seed laser source. In the picosecond regime the oscillator pulses, ranging from 10 to 34ps, can be directly amplified which leads to a quite simple and efficient amplifier architecture. On the other hand, a broadband femtosecond oscillator and a CPA configuration can be used in order to obtain pulse duration down to 900fs. We compare these results to recently obtained achievements using commercial femtosecond lasers based on Yb-doped crystals and fibers and operating at comparable output power levels, up to 15Watt. Finally, we have considered etch rate and process efficiency for both ps- and fs-regimes as a function of average power, of fluence and of intensity.

Numerical and Experimental Analysis of Nonlinear Regenerative Amplifiers Overcoming the Gain Bandwidth Limitation

We present a numerical and experimental analysis of a nonlinear architecture to overcome the gain bandwidth limitation in regenerative amplifiers. This technique is based on the optimization of dispersion and nonlinear effects during the amplification process to obtain broad-bandwidth pulses that can be compressed to short durations with high temporal quality. We demonstrate the advantage of this method to maintain an excellent temporal quality of pulses even at high levels of optical nonlinearity. The technique has been applied to regenerative amplifiers using Yb:YAG, Yb:KYW, and Yb:CALGO crystals as gain media. In all cases we achieved the shortest pulse duration ever obtained from regenerative amplifiers using the respective laser crystals. These results underline the benefits of this amplification technique with respect to current state of the art.

Comparison of Picosecond and Femtosecond Laser Ablation for Surface Engraving of Metals and Semiconductors

Pico and femtosecond lasers present a growing interest for industrials applications such as surface structuring [1] or thin film selective ablation [2]. Indeed, they combine the unique capacity to process any type of material (dielectrics, semiconductors, metals) with an outstanding precision and a reduced affected zone. We report on results about surface engraving of metals (Al, Cu, Mo, Ni), semiconductor (Si) and polymer (PC) using a picosecond thin disk Yb:YAG-amplifier. The pulse duration of this source can be changed using two different configurations: direct amplification of a 34ps-oscillator on one hand, and 1ps-chirped pulse amplification (CPA) scheme on the other hand. The results obtained with this thin disk laser are compared to ones achieved with two commercial femtosecond lasers respectively based on Yb-doped crystals and fibers, and operating at similar output power levels (up to 15Watt).

Ultrafast laser with high energy and high average power for industrial micromachining: Comparison ps-fs

Ultrafast lasers present a growing interest for industrial applications such as surface structuring or thin film selective ablation. Indeed, they combine the unique capacity to process any type of material, such as dielectrics, semiconductors or metals, with an outstanding precision and a reduced affected zone. In this paper, we report on results about surface engraving of metals (Al, Cu, Mo, Ni), semiconductor (Si) and polymer (PC) using a picosecond thin disk Yb:YAG-amplifier, which could be used in the picosecond regime as well as in the femtosecond regime by simply changing the seed laser source. In the picosecond regime the oscillator pulses (34ps) can be directly amplified which leads to a quite simple and efficient amplifier architecture. On the other hand, a broadband femtosecond oscillator and a CPA configuration can be used in order to obtain pulse duration down to 900fs. The results obtained with this thin disk laser are compared to ones achieved with two commercial femtosecond lasers respectively based on Yb-doped crystals and fibers, and operating at similar output power levels (up to 15Watt). Finally, we have considered etch rate and process efficiency for both ps-and fs-regimes as a function of average power, of fluence and of intensity.Ultrafast lasers present a growing interest for industrial applications such as surface structuring or thin film selective ablation. Indeed, they combine the unique capacity to process any type of material, such as dielectrics, semiconductors or metals, with an outstanding precision and a reduced affected zone. In this paper, we report on results about surface engraving of metals (Al, Cu, Mo, Ni), semiconductor (Si) and polymer (PC) using a picosecond thin disk Yb:YAG-amplifier, which could be used in the picosecond regime as well as in the femtosecond regime by simply changing the seed laser source. In the picosecond regime the oscillator pulses (34ps) can be directly amplified which leads to a quite simple and efficient amplifier architecture. On the other hand, a broadband femtosecond oscillator and a CPA configuration can be used in order to obtain pulse duration down to 900fs. The results obtained with this thin disk laser are compared to ones achieved with two commercial femtosecond lasers respectiv...

Sectional Chirped Volume Bragg Grating Compressors for High-Power Chirped-Pulse Amplification

Chirped Bragg Gratings (CBGs) recorded in photo-thermo-refractive (PTR) glass have been successfully used as ultrashort pulse stretchers and compressors in a variety of solid-state and fiber chirped pulse amplification (CPA) laser systems. Compared to traditional pairs of surface gratings, CBG-based stretchers and compressors offer significant advantage in compactness and robustness. They are insensitive to polarization, require virtually no alignment and can handle high average and peak power. At the current technology stage PTR-glass CBGs can provide up to 30 nm spectral bandwidth and up to 300 ps stretched pulse duration. In this paper we propose a concept of sectional CBGs, where multiple CBGs with different central wavelengths recorded in separate PTR-glass wafers are stacked and phased to form a single grating with effective thickness and bandwidth larger than each section. We present results of initial experiment in which pulses from a femtosecond oscillator centered at 1028 nm are stretched by a 32-mm thick CBG to about 160 ps and recompressed by a monolithic 32-mm CBG with 11 nm bandwidth and by a sectional CBG with two 16-mm thick sections each having ~ 5 nm bandwidth and offset central wavelengths: 1025.5 and 1031 nm. In both cases, compressed pulse duration of 350-400 fs, ~ 1.1 × transform-limit was obtained. These results allow CBG-based pulse stretchers and compressors with high stretch ratio and wide bandwidth to be constructed from multiple sections.

Generation of 150-fs pulses from a diode-pumped Yb:KYW nonlinear regenerative amplifier

Generation of sub-150-fs-level pulses has been obtained from an Yb-doped crystal-based regenerative amplifier by applying an innovative amplification scheme. This scheme is based on optimization of the linear and non-linear phase during the amplification process inside the regenerative amplifier cavity. This technique with Yb:KYW allows to achieve pulse durations from diode-pumped Yb-doped regenerative amplifiers that were up to now only accessible with more complex Ti:sapphire amplifiers. With this Yb-doped tungstate crystal used in regenerative amplifiers, 145 fs pulses centered at 1026 nm with a spectral bandwidth of 14 nm at 50 kHz for an average power of 1.6 W have been generated.

Single-stage Yb:YAG booster amplifier producing 2.3 mJ, 520 fs pulses at 10 kHz

520fs, 2.3-mJ pulses are demonstrated in a Yb:YAG booster amplifier delivering peak powers up to 4.4GW. To avoid damage and nonlinear-effect issues, passive divided pulse amplification is studied for the first time for bulk-amplifier.