Masaaki Kamiya

Charge-partitioning study of a wide-pitch silicon micro-strip detector with a 64-channel CMOS preamplifier array

Abstract The wider pitch readout operation of a 50 μm-pitch double-sided silicon micro-strip detector has been studied specifically concerning its ohmic side. Every second readout and ganged configuration was examined by employing a newly developed 64-channel preamplifier array. The observed charge responses for collimated IR light were compared with a numerical model.

Fabrication of a double-sided silicon microstrip detector with an ONO capacitor dielectric film

Double-sided silicon microstrip detectors (DSSDs) with integrated coupling capacitors formed by an oxide-nitride-oxide (ONO) dielectric film were fabricated using newly developed processing techniques. We report on the processing techniques and some characteristics of the detectors fabricated in the above process.

Study of common-mode noise of the SMA2SH - 64 A preamplifier array

Abstract Employing a 64-channel CMOS preamplifier array, SMA2SH - 64 A, we studied its signal-to-noise ratio. Single-channel noise was substantially contaminated with a base-line shift, which was common for all neighboring channels. Subtracting the common base-line shift, we found that the noise level decreased to be acceptable in terms of the design parameters as well as for practical use.

Characterization of an ONO-stacked insulator film for a silicon micro-strip detector

Abstract A semi-empirical model for an ONO-stacked insulator film is presented together with its implications. The model covers ONO, ON, and NO films as well as single-layered SiO 2 and Si 3 N 4 . We eventually present an assessment for estimating the lifetime of an ONO-stacked insulator film for a given configuration.

Development of novel fabrication techniques for a silicon micro-vertex detector unit using the Flip-Chip bonding method

Full-size models of a detector unit for a silicon micro-vertex detector were built for the KEK B factory. The Flip-Chip Bonding (FCB) method using a new type anisotropic conductive film (ACF) was examined. The structure using the new type ACF and improved fabrication process provide a sufficient electrical connection and good reliability for the detector unit. >

Development of new assembly techniques for a silicon micro-vertex detector unit using the flip-chip bonding method

Abstract Full-size models of a detector unit for a silicon micro-vertex detector were built for the KEK B factory. The Flip-Chip Bonding (FCB) method using a new type anisotropic conductive film was examined. The structure using the FCB method successfully provides a new architecture for the silicon micro-vertex detector unit.

Combined use of a field-plate and narrow p-barriers for a wide-pitch ohmic-side readout of the BELLE double-sided SVD

Abstract We explored wide-pitch ohmic-side structures for the BELLE SVD, where we proposed a field-plate structure combined with narrow p-barriers in between the readout electrodes of 90, 113, 180, and 226 μm-pitch detectors. The effect of the p-barriers was studied with a numerical model to trace the carrier trajectories. The charge collection and sharing properties were examined in practice for prototype small-size detectors with an IR pulse shining from either the junction side or the ohmic side. The channel separation capabilities were also shown to be appropriate under nominal operation conditions.

Front-end interface of the SVD readout system for BELLE

The data-acquisition system for a silicon micro-vertex detector of the BELLE experiment is described with special emphasis placed on the front-end circuits and their interfaces. The description includes a 128-channel preamplifier chip, a silicon-based double-sided hybrid card, and readout control chips for digital interfaces, which are discussed in terms of both architectural and operational aspects.

New Insulator Film Of Integrated Capacitor For Silicon Strip Detector

A new stacked thick three layers ONO (silicon diOxide silicon Nitride silicon dioxide) insulator film was developed to be applied for a silicon strip detector. We expected that the ONO film had a superior integrated capacitor in terms of a high electrical breakdown voltage, long term reliability and large unit capacitance. We measured electrical behaviors of test capacitors with single layer silicon dioxide (SiOz), single layer silicon nitride (SisNd), NO (silicon Nitride silicon dioxide), ON (silicon dioxide silicon Nitride) and ONO capacitors.

10-bit CMOS optical link system for Silicon Vertex Detector of BELLE

An optical link system (OLS) is to be used in the data acquisition (DAQ) system for the Silicon Vertex Detector of the KEK B-factory experiment (BELLE collaboration). In this study we report the 10-bit, or channel (ch), OLS in which CMOS ICs are used as the transceiver circuitry for both transmitting and receiving, infrared LEDs are used as photo transmitting devices, and Si PIN photodiodes (PDs) are used as photo-receiving devices. We have obtained a 32 Mbps/ch data rate, at around 5 dB of dynamic range, with less than 8 nsec of jitters and an error rate of less than 10/sup -9/. The scheme we proposed in this study has been confirmed assuming it will be used in the readout system.