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Dive into the research topics where Masahiro Kojima is active.

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Featured researches published by Masahiro Kojima.


IEEE Electron Device Letters | 2016

Improving the Performances of CdTe Gamma Ray Detectors by H 2 /Ar ECR Plasma Processing

M. Niraula; K. Yasuda; S. Kitagawa; Masahiro Kojima; Y. Agata

H2/Ar electron cyclotron resonance plasma processing of the high-resistivity (111) CdTe crystals was studied to find its effect on the leakage current and the gamma ray detection properties of the detectors. All the crystals were chemically etched in a bromine-methanol (BM) solution prior to the plasma processing to obtain a smooth surface. A remarkable reduction in both the surface and the bulk leakage current was observed in the plasma processed detectors when compared with the unprocessed one. The gamma detection property of the detectors, both the spectral resolution and the peak shape, was also significantly improved. X-ray photoelectron spectroscopy confirmed that an excess Te-rich surface layer was present on the BM etched crystal, however, such layer was removed, and the surface atomic ratio was modified after the plasma processing. The improvement in the detector performance could be related to the change in the surface chemical states of the crystals. Hence, this could be a promising process for improving the detectors performance and their stabilities.


IEEE Transactions on Nuclear Science | 2018

Development of Large-Area CdTe/n + -Si Epitaxial Layer-Based Heterojunction Diode-Type Gamma-Ray Detector Arrays

M. Niraula; K. Yasuda; Masahiro Kojima; S. Kitagawa; Shintaro Tsubota; T. Yamaguchi; J. Ozawa; Y. Agata


Journal of Electronic Materials | 2017

Characterization of (211) and (100) CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

K. Yasuda; M. Niraula; Masahiro Kojima; S. Kitagawa; Shintaro Tsubota; T. Yamaguchi; J. Ozawa; Y. Agata


The Japan Society of Applied Physics | 2017

Surface Processing of CdTe Crystals in H 2 /Ar ECR Plasma

T. Yamaguchi; Masahiro Kojima; Shouzou Kitagawa; Jyunnya Ozawa; Shintarou Tsubota; Y. Agata; M. Niraula; K. Yasuda


The Japan Society of Applied Physics | 2017

Fabrication of large area imaging array using MOVPE grown CdTe layers on (211)Si Substrates

J. Ozawa; Shozo Kitagawa; Masahiro Kojima; Shintaro Tsubota; T. Yamaguchi; K. Yasuda; M. Niraula; Y. Agata


Journal of Electronic Materials | 2017

Dry Etching Characteristics of MOVPE-Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas

K. Yasuda; M. Niraula; N. Araki; M. Miyata; S. Kitagawa; Masahiro Kojima; J. Ozawa; Shintaro Tsubota; T. Yamaguchi; Y. Agata


The Japan Society of Applied Physics | 2016

Etch pit evaluation of (211) CdTe/Si layers grown by MOVPE

Shintaro Tsubota; Soichiro Sugimoto; Yuki Ito; Daisuke Yamazaki; Satoshi Kono; Masahiro Kojima; S. Kitagawa; K. Yasuda; Niraula Madan; Y. Agata


The Japan Society of Applied Physics | 2016

Photo-Luminescence of As-doped CdTe layers grown on (211) Si Substrates by MOVPE

Masahiro Kojima; Yuki Ito; Satosi Kono; Soichiro Sugimoto; Daisuke Yamazaki; S. Kitagawa; Sintaro Tsubota; K. Yasuda; M. Niraula; Y. Agata


The Japan Society of Applied Physics | 2016

Photo-luminescence of CdTe growth layer on (211) and (100) Si substrate by MOVPE

Shozo Kitagawa; Satoshi Kono; Yuki Ito; Soichiro Sugimoto; Daisuke Yamazaki; Masahiro Kojima; Shintaro Tsubota; Y. Agata; M. Niraula; K. Yasuda


The Japan Society of Applied Physics | 2016

Photoluminescence of CdTe layers grown on (211)Si Substrates by MOVPE

Masahiro Kojima; S. Kitagawa; J. Ozawa; Shintaro Tsubota; T. Yamaguchi; K. Yasuda; Niraula Madan; Y. Agata

Collaboration


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K. Yasuda

Nagoya Institute of Technology

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Y. Agata

Nagoya Institute of Technology

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M. Niraula

Nagoya Institute of Technology

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S. Kitagawa

Nagoya Institute of Technology

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Shintaro Tsubota

Nagoya Institute of Technology

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T. Yamaguchi

Nagoya Institute of Technology

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J. Ozawa

Nagoya Institute of Technology

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Daisuke Yamazaki

Nagoya Institute of Technology

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Soichiro Sugimoto

Nagoya Institute of Technology

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Yuki Ito

Nagoya Institute of Technology

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