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Featured researches published by Masakiyo Tsunoda.


Spintronics XI | 2018

Intuitive explanation of Anisotropic Magnetoresistance (AMR) effect and necessary condition for half-metallic ferromagnet "negative AMR" (Conference Presentation)

Satoshi Kokado; Masakiyo Tsunoda

The anisotropic magnetoresistance (AMR) effect is a fundamental phenomenon in which the electrical resistivity ndepends on the relative angle between the magnetization direction and the electric current direction. The efficiency of the effect ``AMR ratio is defined by (r_parallel - r_perp)/r_perp, where r_parallel (r_perp) is a resistivity for the case of the electrical current parallel to the magnetization (a resistivity for the case of the current perpendicular to the magnetization). The AMR effect has been experimentally studied for various ferromagnets since about 150 years ago. The intuitive explanation about the AMR effect, however, has scarcely been reported. In this study, we first derive a general expression of the AMR ratio extending the conventional model [1] to a more general one [2 - 4]. Using the general expression, we next give the intuitive explanation about the AMR effect [3]. In addition, we show that the negative AMR ratio is a necessary condition for half-metallic ferromagnets [2,3,5,6,7]. n[1] I. A. Campbell et al., J. Phys. C 3, S95 (1970). n[2] S. Kokado, M. Tsunoda et al., J. Phys. Soc. Jpn. 81, 024705 (2012). n[3] S. Kokado and M. Tsunoda, Adv. Mater. Res. 750-752, 978 (2013). n[4] S. Kokado and M. Tsunoda, J. Phys. Soc. Jpn. 84, 094710 (2015).n[5] F. Yang, Y. Sakuraba, S. Kokado et al., Phys. Rev. B 86, 020409 (2012). n[6] Y. Sakuraba, S. Kokado et al., Appl. Phys. Lett. 104, 172407 (2014).n[7] S. Kokado, Y. Sakuraba, and M. Tsunoda, Jpn. J. Appl. Phys. 55, 108004 (2016).


Archive | 1997

METHOD FOR MANUFACTURING MAGNETORESISTANCE ELEMENT

Migaku Takahashi; Satoshi Miura; Masakiyo Tsunoda


Archive | 2001

Magnetoresistance effect device and method for manufacturing the same, base for magnetoresistance effect device and method for manufacturing the same, and magnetoresistance effect sensor

Migaku Takahashi; Satoshi Miura; Masakiyo Tsunoda


Archive | 2007

Magnetic thin film and magnetoresistance effect element

Migaku Takahashi; Masakiyo Tsunoda; Kojiro Komagaki


Archive | 2008

Tunnel magnetoresistance effect film and magnetic device

Migaku Takahashi; Masakiyo Tsunoda; Kojiro Komagaki


Archive | 2007

Magnetic thin film and magnetoresistive effect element

Kojiro Komagaki; Ken Takahashi; Masakiyo Tsunoda; 匡清 角田; 幸次郎 駒垣; 高橋 研


ITE Technical Report | 2015

Anisotropic Magnetoresistance and Anomalous Hall Effects of pseudo single crystal Fe_4N thin films

Masakiyo Tsunoda; Kazuki Kabara; Satoshi Kokado


한국자기학회 학술연구발표회 논문개요집 | 2012

비정질 FeNiSiB 층을 자유층에 삽입한 이중 자기터널접합의 전압의존성 특성

김도균; 조지웅; 전병선; 신경호; Shinji Isogami; Masakiyo Tsunoda; Migaku Takahashi


한국자기학회지 | 2011

MgO(100) 기판 위에 증착된 Ag/CoFeB 박막의 스퍼터링 조건에 따른 미세성장구조 변화 연구

전보건; 정종율; Hirokazu Takahash; Masakiyo Tsunoda; Migaku Takahashi


한국자기학회 학술연구발표회 논문개요집 | 2010

AMR and XMCD Study of Pseudo Single Crystal γ’-Fe₄NFilms

Masakiyo Tsunoda; Hirokazu Takahashi; Satoshi Kokado; Tetsuya Nakamura; Yosuke Komasaki; Migaku Takahashi

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Chong-Oh Kim

Chungnam National University

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