Satoshi Kokado

Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe4N, and Half-Metallic Ferromagnet: A Systematic Analysis

We theoretically analyze the anisotropic magnetoresistance (AMR) effects of bcc Fe (+), fcc Co (+), fcc Ni (+), Fe

Negative Anisotropic Magnetoresistance in Fe4N Film

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Quantitative analysis of anisotropic magnetoresistance in Co2MnZ and Co2FeZ epitaxial thin films: A facile way to investigate spin-polarization in half-metallic Heusler compounds

N (-), and a half-metallic ferromagnet (-). The sign in each ( ) represents the sign of the AMR ratio observed experimentally. We here use the two-current model for a system consisting of a spin-polarized conduction state and localized d states with spin--orbit interaction. From the model, we first derive a general expression of the AMR ratio. The expression consists of a resistivity of the conduction state of the

Anisotropic Magnetoresistance Effect: General Expression of AMR Ratio and Intuitive Explanation for Sign of AMR Ratio

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The origin of bias-voltage dependence in CoFe/SrTiO3/La0.7Sr0.3MnO3 magnetic tunnel junctions

spin (

Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in a Model with Crystal Field

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Tunnel Magnetoresistance Effect in Co/BN nanotubes/Co Junctions

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Magnetoresistance effect in spin-polarized junctions of ferromagnetically contacting multiple conductive paths: Applications to atomic wires and carbon nanotubes

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Transverse anisotropic magnetoresistance effects in pseudo-single-crystal γ′-Fe4N thin films

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A theoretical study on spin-dependent transport of `ferromagnet/carbon nanotube encapsulating magnetic atoms/ferromagnet' junctions with four-valued conductances

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