Masayoshi Nomura
Hitachi
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Publication
Featured researches published by Masayoshi Nomura.
Japanese Journal of Applied Physics | 1981
Michio Tajima; Masayoshi Nomura
The photoluminescence (PL) technique has been applied for the first time to the quantitative analysis of shallow impurities incorporated intentionally and unintentionally in silicon epitaxial layers with a thickness of about 3 µm. The PL from the samples is the overlapping of the PLs from the substrate and from the epitaxial layer. The species of impurities incorporated in the epitaxial layer can be definitely identified by the PL analysis. It is demonstrated that the PL intensity ratio of the impurity component for the epitaxial layer to that for the substrate can be used as a measure of the impurity concentration in the epitaxial layer in the range between 1013 and 1016 cm-3.
Applied Physics Letters | 1967
Masao Tamura; Masayoshi Nomura
The initial stages of the deposition of silicon on very thin sapphire platelets with exact (0001) orientation by the hydrogen reduction of SiCl4 have been observed using transmission electron microscopy.
Archive | 1976
Mitsuru Ura; Takuzo Ogawa; Takaya Suzuki; Yosuke Inoue; Masayoshi Nomura
Archive | 1974
Hiroji Saida; Yuichi Ono; Masayoshi Nomura; Masao Tamura; Hirotsugu Kozuka
Archive | 1969
Y Shimura; H Sano; Masayoshi Nomura; Hiroji Saida; Yuichi Ono
Japanese Journal of Applied Physics | 1963
Masayoshi Nomura
Archive | 2017
Yoshiji Horikoshi; Atsuko Ebina; Tadashi Takahashi; Shinya Iida; Yoshimitsu Sugita; Masayoshi Nomura
Archive | 2017
Shinya Iida; Yoshimitsu Sugita; Masayoshi Nomura; Paul Mertens; Herman Maes; Yoshitaka Igarashi; Katsuhiko Kurumada; Tatsuya Niimi
Archive | 2017
Yoshiaki Okajima; Kunio Miyazaki; Nan Wu; Thomas Osipowicz; Shinya Iida; Yoshimitsu Sugita; Masayoshi Nomura
Applied Physics Letters | 1967
Masao Tamura; Masayoshi Nomura
