Masayoshi Ozaki

A 2/3-inch 2.0 M-pixel M-FIT CCD with a single channel HCCD for HDTV camera

HDTV technology is now entering the practical stage. Efforts have been devoted to realizing the hand-held HDTV camera using three 2/3-inch 2.0M-pixel CCDs. However, the data reported so far showed poor performance because of the limited space of the unit pixel. This high performance 2/3-inch 2.0M-pixel CCD with a single HCCD employs M-FIT architecture. The CCD exhibits saturation current of 580nA, sensitivity of 44nA/lx, smear level of -100dB, and amplitude response at 800TV lines of 60%.<<ETX>>

A multiple frame-interline-transfer (M-FIT) CCD for progressive-scan camera systems

A progressive scan CCD (charge coupled device) that features multiple-frame interline transfer (M-FIT) operation is described. This 2/3-inch 500-k (948*486)-pixel M-FIT CCD is implemented on the basis of a conventional 2poly-Si process, and has a 16:9 aspect ratio (switchable to 4:3), an 80-dB dynamic range, and 25-nA/1*sensitivity. A schematic diagram of an experimental device developed for the next-generation widescreen TV camera system is shown. Measured photoconversion characteristics are shown together with those for a conventional progressive scan CCD. A reproduced image of a resolution chart in which 480 TV-line resolution is achieved by the progressive scan is also shown.<<ETX>>

A 1 mm 50 K-pixel IT CCD image sensor for miniature camera system

A 1 mm 50 k-pixel interline CCD features a 4/spl times/4 /spl mu/m/sup 2/ pixel, integration of a Vsub adjust circuit and a packageless assembly of a chip-provided microlens. The chip size and the assembled device outer sizes are 1.1 (H)/spl times/1.34 (V)mm/sup 2/ and 1.2 (H)/spl times/1.5 (V)mm/sup 2/ respectively. The 4/spl times/4 /spl mu/m/sup 2/-Pixel has image quality equivalent to that of conventional 5/spl times/5 /spl mu/m/sup 2/ pixel. Channel narrowing is important in design with small pixel size, because narrowed channel causes reduction of handling charge in the vertical CCD. A low-temperature oxidation process minimizes channel narrowing caused by lateral diffusion of boron. The thickness of the transfer gate oxide is reduced to 80%, which also results in an increase of handling charge. Tne creation of the p-well and n-type region of the photodiode (PD) are by high-energy ion implantation, making the isolation length between VCCD and PD shorter than that with the conventional method. Owing to the above techniques, VCCD with 0.8pm channel width has 2.0/spl times/10/sup 4/ electron/pixel handling charge.