Masayuki Ichige
Toshiba
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Publication
Featured researches published by Masayuki Ichige.
international solid state circuits conference | 2007
Ken Takeuchi; Yasushi Kameda; Susumu Fujimura; Hiroyuki Otake; Koji Hosono; Hitoshi Shiga; Yoshihisa Watanabe; Takuya Futatsuyama; Yoshihiko Shindo; Masatsugu Kojima; Makoto Iwai; Masanobu Shirakawa; Masayuki Ichige; Kazuo Hatakeyama; Shinichi Tanaka; Teruhiko Kamei; Jia-Yi Fu; Adi Cernea; Yan Li; Masaaki Higashitani; Gertjan Hemink; Shinji Sato; Ken Oowada; Shih-Chung Lee; Naoki Hayashida; Jun Wan; Jeffrey W. Lutze; Shouchang Tsao; Mehrdad Mofidi; Kiyofumi Sakurai
A single 3.3-V only, 8-Gb NAND flash memory with the smallest chip to date, 98.8 mm2, has been successfully developed. This is the worlds first integrated semiconductor chip fabricated with 56-nm CMOS technologies. The effective cell size including the select transistors is 0.0075 mum2 per bit, which is the smallest ever reported. To decrease the chip size, a very efficient floor plan with one-sided row decoder, one-sided page buffer, and one-sided pad is introduced. As a result, an excellent 70% cell area efficiency is realized. The program throughput is drastically improved to twice as large as previously reported and comparable to binary memories. The best ever 10-MB/s programming is realized by increasing the page size from 4kB to 8kB. In addition, noise cancellation circuits and the dual VDD-line scheme realize both a small die size and a fast programming. An external page copy achieves a fast 93-ms block copy, efficiently using a 1-MB block size
international solid-state circuits conference | 2006
Ken Takeuchi; Yasushi Kameda; Susumu Fujimura; Hiroyuki Otake; Koji Hosono; Hitoshi Shiga; Y. Watanabe; Takuya Futatsuyama; Yoshihiko Shindo; Masatsugu Kojima; Makoto Iwai; Masanobu Shirakawa; Masayuki Ichige; Kazuo Hatakeyama; Sumio Tanaka; Teruhiko Kamei; Jia-Yi Fu; Adi Cernea; Yan Li; Masaaki Higashitani; Gertjan Hemink; Shinji Sato; Ken Oowada; Shih-Chung Lee; N. Hayashida; Jun Wan; Jeffrey W. Lutze; Shouchang Tsao; Mehrdad Mofidi; Kiyofumi Sakurai
Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm2, with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual VDD scheme enabling efficient use of 1MB blocks
Archive | 2003
Masayuki Ichige; Koji Hashimoto; Tatsuaki Kuji; Seiichi Mori; Riichiro Shirota; Yuji Takeuchi; Koji Sakui
Archive | 2004
Masayuki Ichige; Yuji Takeuchi; Michiharu Matsui; Atsuhiro Sato; Kikuko Sugimae; Riichiro Shirota
Archive | 2006
Kikuko Sugimae; Masayuki Ichige; Fumitaka Arai; Yasuhiko Matsunaga; Atsuhiro Sato
Archive | 2006
Masayuki Ichige; Kikuko Sugimae; Riichiro Shirota
Archive | 2002
Masayuki Ichige; Riichiro Shirota; Kikuko Sugimae
Archive | 2003
Masayuki Ichige; Riichiro Shirota; Yuji Takeuchi; Kikuko Sugimae
Archive | 2004
Masayuki Ichige; Fumitaka Arai; Kikuko Sugimae
Archive | 2001
Masayuki Ichige; Riichiro Shirota; Kikuko Sugimae; Atsuhiro Sato; Yuji Takeuchi