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Dive into the research topics where Masayuki Ichige is active.

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Featured researches published by Masayuki Ichige.


international solid state circuits conference | 2007

A 56-nm CMOS 99-

Ken Takeuchi; Yasushi Kameda; Susumu Fujimura; Hiroyuki Otake; Koji Hosono; Hitoshi Shiga; Yoshihisa Watanabe; Takuya Futatsuyama; Yoshihiko Shindo; Masatsugu Kojima; Makoto Iwai; Masanobu Shirakawa; Masayuki Ichige; Kazuo Hatakeyama; Shinichi Tanaka; Teruhiko Kamei; Jia-Yi Fu; Adi Cernea; Yan Li; Masaaki Higashitani; Gertjan Hemink; Shinji Sato; Ken Oowada; Shih-Chung Lee; Naoki Hayashida; Jun Wan; Jeffrey W. Lutze; Shouchang Tsao; Mehrdad Mofidi; Kiyofumi Sakurai

A single 3.3-V only, 8-Gb NAND flash memory with the smallest chip to date, 98.8 mm2, has been successfully developed. This is the worlds first integrated semiconductor chip fabricated with 56-nm CMOS technologies. The effective cell size including the select transistors is 0.0075 mum2 per bit, which is the smallest ever reported. To decrease the chip size, a very efficient floor plan with one-sided row decoder, one-sided page buffer, and one-sided pad is introduced. As a result, an excellent 70% cell area efficiency is realized. The program throughput is drastically improved to twice as large as previously reported and comparable to binary memories. The best ever 10-MB/s programming is realized by increasing the page size from 4kB to 8kB. In addition, noise cancellation circuits and the dual VDD-line scheme realize both a small die size and a fast programming. An external page copy achieves a fast 93-ms block copy, efficiently using a 1-MB block size


international solid-state circuits conference | 2006

{\hbox {mm}}^{2}

Ken Takeuchi; Yasushi Kameda; Susumu Fujimura; Hiroyuki Otake; Koji Hosono; Hitoshi Shiga; Y. Watanabe; Takuya Futatsuyama; Yoshihiko Shindo; Masatsugu Kojima; Makoto Iwai; Masanobu Shirakawa; Masayuki Ichige; Kazuo Hatakeyama; Sumio Tanaka; Teruhiko Kamei; Jia-Yi Fu; Adi Cernea; Yan Li; Masaaki Higashitani; Gertjan Hemink; Shinji Sato; Ken Oowada; Shih-Chung Lee; N. Hayashida; Jun Wan; Jeffrey W. Lutze; Shouchang Tsao; Mehrdad Mofidi; Kiyofumi Sakurai

Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm2, with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual VDD scheme enabling efficient use of 1MB blocks


Archive | 2003

8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

Masayuki Ichige; Koji Hashimoto; Tatsuaki Kuji; Seiichi Mori; Riichiro Shirota; Yuji Takeuchi; Koji Sakui


Archive | 2004

A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

Masayuki Ichige; Yuji Takeuchi; Michiharu Matsui; Atsuhiro Sato; Kikuko Sugimae; Riichiro Shirota


Archive | 2006

Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systems

Kikuko Sugimae; Masayuki Ichige; Fumitaka Arai; Yasuhiko Matsunaga; Atsuhiro Sato


Archive | 2006

Non-volatile semiconductor memory device with multi-layer gate structure

Masayuki Ichige; Kikuko Sugimae; Riichiro Shirota


Archive | 2002

Nonvolatile semiconductor memory and fabrication method for the same

Masayuki Ichige; Riichiro Shirota; Kikuko Sugimae


Archive | 2003

Semiconductor memory device equipped with memory transistor and peripheral transistor and method of manufacturing the same

Masayuki Ichige; Riichiro Shirota; Yuji Takeuchi; Kikuko Sugimae


Archive | 2004

Non-volatile semiconductor memory device with a memory unit including not more than two memory cell transistors

Masayuki Ichige; Fumitaka Arai; Kikuko Sugimae


Archive | 2001

Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same

Masayuki Ichige; Riichiro Shirota; Kikuko Sugimae; Atsuhiro Sato; Yuji Takeuchi

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