Matthew P. Lumb

Enhanced multiple exciton generation in quasi-one-dimensional semiconductors.

The creation of a single electron-hole pair (i.e., exciton) per incident photon is a fundamental limitation for current optoelectronic devices including photodetectors and photovoltaic cells. The prospect of multiple exciton generation per incident photon is of great interest to fundamental science and the improvement of solar cell technology. Multiple exciton generation is known to occur in semiconductor nanostructures with increased efficiency and reduced threshold energy compared to their bulk counterparts. Here we report a significant enhancement of multiple exciton generation in PbSe quasi-one-dimensional semiconductors (nanorods) over zero-dimensional nanostructures (nanocrystals), characterized by a 2-fold increase in efficiency and reduction of the threshold energy to (2.23 ± 0.03)E(g), which approaches the theoretical limit of 2E(g). Photovoltaic cells based on PbSe nanorods are capable of improved power conversion efficiencies, in particular when operated in conjunction with solar concentrators.

Enhanced open-circuit voltage of PbS nanocrystal quantum dot solar cells.

Nanocrystal quantum dots (QD) show great promise toward improving solar cell efficiencies through the use of quantum confinement to tune absorbance across the solar spectrum and enable multi-exciton generation. Despite this remarkable potential for high photocurrent generation, the achievable open-circuit voltage (Voc) is fundamentally limited due to non-radiative recombination processes in QD solar cells. Here we report the highest open-circuit voltages to date for colloidal QD based solar cells under one sun illumination. This Voc of 692 ± 7 mV for 1.4 eV PbS QDs is a result of improved passivation of the defective QD surface, demonstrating as a function of the QD bandgap (Eg). Comparing experimental Voc variation with the theoretical upper-limit obtained from one diode modeling of the cells with different Eg, these results clearly demonstrate that there is a tremendous opportunity for improvement of Voc to values greater than 1 V by using smaller QDs in QD solar cells.

Incorporating photon recycling into the analytical drift-diffusion model of high efficiency solar cells

The analytical drift-diffusion formalism is able to accurately simulate a wide range of solar cell architectures and was recently extended to include those with back surface reflectors. However, as solar cells approach the limits of material quality, photon recycling effects become increasingly important in predicting the behavior of these cells. In particular, the minority carrier diffusion length is significantly affected by the photon recycling, with consequences for the solar cell performance. In this paper, we outline an approach to account for photon recycling in the analytical Hovel model and compare analytical model predictions to GaAs-based experimental devices operating close to the fundamental efficiency limit.

Double quantum-well tunnel junctions with high peak tunnel currents and low absorption for InP multi-junction solar cells

Lattice matched InAlGaAs tunnel junctions with a 1.18 eV bandgap have been grown for a triple-junction solar cell on InP. By including two InGaAs quantum wells in the structure, a peak tunnel current density of 113 A/cm2 was observed, 45 times greater than the baseline bulk InAlGaAs tunnel junction. The differential resistance of the quantum well device is 7.52 × 10−4 Ω cm2, a 15-fold improvement over the baseline device. The transmission loss to the bottom cell is estimated to be approximately 1.7% and a network simulation demonstrates that quantum well tunnel junctions play a key role in improving performance at high sun-concentrations.

Design of an achievable, all lattice-matched multijunction solar cell using InGaAlAsSb

A design for a realistically achievable, multijunction solar cell based on all lattice-matched materials with >50% projected efficiencies under concentration is presented. Using quaternary materials such as InAlAsSb and InGaAlAs at stochiometries lattice-matched to InP substrates, direct bandgaps ranging from 0.74eV up to ∼1.8eV, ideal for solar energy conversion, can be achieved. In addition, multi-quantum well structures are used to reduce the band-gap further to <0.7 eV. A triple-junction (3J) solar cell using these materials is described, and in-depth modeling results are presented showing realistically achievable efficiencies of AM1.5D 500X of η ∼ 53% and AM0 1 Sun of η∼ 37%.

Quantum wells and superlattices for III-V photovoltaics and photodetectors

Semiconductor quantum wells and superlattices have found numerous applications in optoelectronic devices, such as lasers, LEDs and SOAs, and are an increasingly common feature of high efficiency solar cells and photodetectors. In this paper we will highlight some of the recent developments in the use of low-dimensional III-V semiconductors to improve the performance of photovoltaics by tailoring the bandgap of the junction. We also discuss novel structures designed to maximize photo-generated carrier escape and the application of quantum confinement to other components of the solar cell, such as tunnel junctions. Recent developments in type-II superlattices for photodetectors will also be discussed, including the graded-gap LWIR device based on the W-structured superlattices demonstrated at the Naval Research Laboratory. Modeled results will be presented using the NRL BANDSTM integrated 8-band kp and Poisson solver, which was developed for computing the bandstructures of superlattice and multi-quantum well photodiodes

Simulation of novel InAlAsSb solar cells

This work uses simulations to predict the performance of InAlAsSb solar cells for use as the top cell of triple junction cells lattice matched to InP. The InP-based material system has the potential to achieve extremely high efficiencies due the availability of lattice matched materials close to the ideal bandgaps for solar energy conversion. The band-parameters, optical properties and minority carrier transport properties are modeled based on literature data for the InAlAsSb quaternary, and an analytical drift-diffusion model is used to realistically predict the solar cell performance.

Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy

A photoluminescence (PL) spectroscopy study of the bulk quaternary alloy InAlAsSb is presented. Samples were grown lattice-matched to InP by molecular beam epitaxy and two different growth temperatures of 450 °C and 325 °C were compared. Interpolated bandgap energies suggest that the development of this alloy would extend the range of available direct bandgaps attainable in materials lattice-matched to InP to energies as high as 1.81 eV. However, the peak energy of the observed PL emission is anomalously low for samples grown at both temperatures, with the 450 °C sample showing larger deviation from the expected bandgap. A fit of the integrated PL intensity (I) to an I∝Pk dependence, where P is the incident power density, yields characteristic coefficients k = 1.05 and 1.18 for the 450 °C and 325 °C samples, respectively. This indicates that the PL from both samples is dominated by excitonic recombination. A blue-shift in the peak emission energy as a function of P, along with an S-shaped temperature depe...

Enhanced Hot-Carrier Effects in InAlAs/InGaAs Quantum Wells

Hot-carrier solar cells require absorber materials with restricted carrier thermalization pathways, in order to slow the rate of heat energy dissipation from the carrier population to the lattice, relative to the rate of carrier extraction. Absorber suitability can be characterized in terms of carrier thermalization coefficient (Q). Materials with lower Q generate steady-state hot-carrier populations at lower levels of incident solar power and, therefore, are better able to perform as hot-carrier absorbers. In this study, we evaluate Q = 2.5±0.2 W·K-1 · cm-2 for a In0.52 AlAs/In0.53 GaAs single-quantum-well(QW) heterostructure using photoluminescence spectroscopy. This is the lowest experimentally determined Q value for any material system studied to date. Hot-carrier solar cell simulations, using this material as an absorber yield efficiency ~39% at 2000X, which corresponds to a >5% enhancement over an equivalent single-junction thermal equilibrium device.

Concentrator photovoltaic module architectures with capabilities for capture and conversion of full global solar radiation

Significance Concentrator photovoltaic (CPV) systems, wherein light focuses onto multijunction solar cells, offer the highest efficiencies in converting sunlight to electricity. The performance is intrinsically limited, however, by an inability to capture diffuse illumination, due to narrow acceptance angles of the concentrator optics. Here we demonstrate concepts where flat-plate solar cells mount onto the backplanes of the most sophisticated CPV modules to yield an additive contribution to the overall output. Outdoor testing results with two different hybrid module designs demonstrate absolute gains in average daily efficiencies of between 1.02% and 8.45% depending on weather conditions. The findings suggest pathways to significant improvements in the efficiencies, with economics that could potentially expand their deployment to a wide range of geographic locations. Emerging classes of concentrator photovoltaic (CPV) modules reach efficiencies that are far greater than those of even the highest performance flat-plate PV technologies, with architectures that have the potential to provide the lowest cost of energy in locations with high direct normal irradiance (DNI). A disadvantage is their inability to effectively use diffuse sunlight, thereby constraining widespread geographic deployment and limiting performance even under the most favorable DNI conditions. This study introduces a module design that integrates capabilities in flat-plate PV directly with the most sophisticated CPV technologies, for capture of both direct and diffuse sunlight, thereby achieving efficiency in PV conversion of the global solar radiation. Specific examples of this scheme exploit commodity silicon (Si) cells integrated with two different CPV module designs, where they capture light that is not efficiently directed by the concentrator optics onto large-scale arrays of miniature multijunction (MJ) solar cells that use advanced III–V semiconductor technologies. In this CPV+ scheme (“+” denotes the addition of diffuse collector), the Si and MJ cells operate independently on indirect and direct solar radiation, respectively. On-sun experimental studies of CPV+ modules at latitudes of 35.9886° N (Durham, NC), 40.1125° N (Bondville, IL), and 38.9072° N (Washington, DC) show improvements in absolute module efficiencies of between 1.02% and 8.45% over values obtained using otherwise similar CPV modules, depending on weather conditions. These concepts have the potential to expand the geographic reach and improve the cost-effectiveness of the highest efficiency forms of PV power generation.