Matthew Pelliccione

Vertical field-effect transistor based on wave-function extension

Department of Physics, Stanford University, Stanford CA 94305-4045 USA(Dated: July 21, 2011)We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depletingone layer will extendits wavefunction tooverlap the other layer and increase tunnelcurrent.We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel currentincrease of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of thedesign to other material systems such as graphene.

Design of a scanning gate microscope for mesoscopic electron systems in a cryogen-free dilution refrigerator

We report on our design of a scanning gate microscope housed in a cryogen-free dilution refrigerator with a base temperature of 15 mK. The recent increase in efficiency of pulse tube cryocoolers has made cryogen-free systems popular in recent years. However, this new style of cryostat presents challenges for performing scanning probe measurements, mainly as a result of the vibrations introduced by the cryocooler. We demonstrate scanning with root-mean-square vibrations of 0.8 nm at 3 K and 2.1 nm at 15 mK in a 1 kHz bandwidth with our design. Using Coulomb blockade thermometry on a GaAs/AlGaAs gate-defined quantum dot, we demonstrate an electron temperature of 45 mK.

Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy

Correlated electron states in high mobility two-dimensional electron systems (2DESs), including charge density waves and microemulsion phases intermediate between a Fermi liquid and Wigner crystal, are predicted to exhibit complex local charge order. Existing experimental studies, however, have mainly probed these systems at micron to millimeter scales rather than directly mapping spatial organization. Scanning probes should be well-suited to study the spatial structure of these states, but high mobility 2DESs are found at buried semiconductor interfaces, beyond the reach of conventional scanning tunneling microscopy. Scanning techniques based on electrostatic coupling to the 2DES deliver important insights, but generally with resolution limited by the depth of the 2DES. In this letter, we present our progress in developing a technique called “virtual scanning tunneling microscopy” that allows local tunneling into a high mobility 2DES. Using a specially designed bilayer GaAs/AlGaAs heterostructure where the tunnel coupling between two separate 2DESs is tunable via electrostatic gating, combined with a scanning gate, we show that the local tunneling can be controlled with sub-250 nm resolution.

Erratum: “Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems” [Appl. Phys. Lett. 97, 132103 (2010)]

We propose a novel probe technique capable of performing local low-temperature spectroscopy on a 2Delectron system (2DES) in a semiconductor heterostructure. Motivated by predicted spatially-structuredelectron phases, the probe uses a charged metal tip to induce electrons to tunnel locally, directly belowthe tip, from a “probe” 2DES to a “subject” 2DES of interest. We test this concept with large-area (non-scanning) tunneling measurements, and predict a high spatial resolution and spectroscopic capability, withminimal influence on the physics in the subject 2DES.As semiconductor growth techniques advance, two-dimensional electron systems (2DESs) with ultra-low dis-order are revealing exotic new physics. For instance,anisotropic transport in high mobility quantum Hall sys-tems suggests a striped mixture of electron phases.