Matthias J. Young

Reversible High‐Capacity Si Nanocomposite Anodes for Lithium‐ion Batteries Enabled by Molecular Layer Deposition

The molecular-layer deposition of a flexible coating onto Si electrodes produces high-capacity Si nanocomposite anodes. Using a reaction cascade based on inorganic trimethylaluminum and organic glycerol precursors, conventional nano-Si electrodes undergo surface modifications, resulting in anodes that can be cycled over 100 times with capacities of nearly 900 mA h g(-1) and Coulombic efficiencies in excess of 99%.

Growth and Characterization of Al2O3 Atomic Layer Deposition Films on sp2-Graphitic Carbon Substrates Using NO2/Trimethylaluminum Pretreatment

The growth of Al2O3 films by atomic layer deposition (ALD) on model sp(2)-graphitic carbon substrates was evaluated following a nitrogen dioxide (NO2) and trimethylaluminum (TMA) pretreatment to deposit an Al2O3 adhesion layer. Al2O3 ALD using TMA and water (H2O) as the reactants was used to grow Al2O3 films on exfoliated highly ordered pyrolitic graphite (HOPG) at 150 °C with and without the pretreatment procedure consisting of five NO2/TMA cycles. The Al2O3 films on HOPG substrates were evaluated using spectroscopic ellipsometry and electrochemical analysis to determine film thickness and quality. These experiments revealed that five NO2/TMA cycles at 150 °C deposited an Al2O3 adhesion layer with a thickness of 5.7 ± 3.6 Å on the HOPG substrate. A larger number of NO2/TMA cycles at 150 °C deposited thicker Al2O3 films until reaching a limiting thickness of ∼80 Å. Electrochemical impedance spectroscopy (EIS) measurements revealed that five cycles of NO2/TMA pretreatment enabled the growth of high quality insulating Al2O3 films with high charge-transfer resistance after only 20 TMA/H2O Al2O3 ALD cycles. In contrast, with no NO2/TMA pretreatment, EIS measurements indicated that 100 TMA/H2O Al2O3 ALD cycles were necessary to produce an insulating Al2O3 film with high charge-transfer resistance. Al2O3 films grown after the NO2/TMA pretreatment at 150 °C were also demonstrated to have better resistance to dissolution in an aqueous environment.

Rapid Growth of Crystalline Mn5O8 by Self-Limited Multilayer Deposition using Mn(EtCp)2 and O3

This work investigates the use of ozone as a post-treatment of ALD-grown MnO and as a coreactant with bis(ethylcyclopentadienyl)manganese (Mn(EtCp)2) in ALD-like film growth. In situ quartz crystal microbalance measurements are used to monitor the mass changes during growth, which are coupled with ex situ materials characterization following deposition to evaluate the resulting film composition and structure. We determined that during O3 post-treatment of ALD-grown MnO, O3 oxidizes the near-surface region corresponding to a conversion of 22 Å of the MnO film to MnO2. Following oxidation by O3, exposure of Mn(EtCp)2 results in mass gains of over 300 ng/cm(2), which exceeds the expected mass gain for reaction of the Mn(EtCp)2 precursor with surface hydroxyls by over four times. We attribute this high mass gain to adsorbed Mn(EtCp)2 shedding its EtCp ligands at the surface and releasing Mn(II) ions which subsequently diffuse into the bulk film and partially reduce the oxidized film back to MnO. These Mn(EtCp)2 and O3 reactions are combined in sequential steps with (a) Mn(EtCp)2 reacting at the surface of an O-rich layer, shedding its two EtCp ligands and freeing Mn(II) to diffuse into the film followed by (b) O3 oxidizing the film surface and withdrawing Mn from the subsurface to create an O-rich layer. This deposition process results in self-limiting multilayer deposition of crystalline Mn5O8 films with a density of 4.7 g/cm(3) and an anomalously high growth rate of 5.7 Å/cycle. Mn5O8 is a metastable phase of manganese oxide which possesses an intermediate composition between the alternating MnO and MnO2 compositions of the near-surface during the Mn(EtCp)2 and O3 exposures.