Matthias Posselt

Intrinsic and extrinsic diffusion of indium in germanium

Diffusion experiments with indium (In) in germanium (Ge) were performed in the temperature range between 550 and 900 °C. Intrinsic and extrinsic doping levels were achieved by utilizing various implantation doses. Indium concentration profiles were recorded by means of secondary ion mass spectrometry and spreading resistance profiling. The observed concentration independent diffusion profiles are accurately described based on the vacancy mechanism with a singly negatively charged mobile In-vacancy complex. In accord with the experiment, the diffusion model predicts an effective In diffusion coefficient under extrinsic conditions that is a factor of 2 higher than under intrinsic conditions. The temperature dependence of intrinsic In diffusion yields an activation enthalpy of 3.51 eV and confirms earlier results of Dorner et al. [Z. Metallk. 73, 325 (1982)]. The value clearly exceeds the activation enthalpy of Ge self-diffusion and indicates that the attractive interaction between In and a vacancy does not ...

Millisecond flash lamp annealing of shallow implanted layers in Ge

Shallow n+ layers in Ge are formed by phosphorus implantation and subsequent millisecond flash lamp annealing. Present investigations are focused on the dependence of P redistribution, diffusion and electrical activation on heat input into the sample and flash duration. In contrast to conventional annealing procedures an activation up to 6.5×1019 cm−3 is achieved without any dopant redistribution and noticeable diffusion. Present results suggest that independently of pretreatment the maximum activation should be obtained at a flash energy that corresponds to the onset of P diffusion. The deactivation of P is explained qualitatively by mass action analysis which takes into account the formation of phosphorus-vacancy clusters.

P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation

Phosphorus implantation (30 keV, 3×1015 cm−2) into preamorphized Ge and subsequent rapid thermal or flash lamp annealing is investigated. During annealing a significant P diffusion in amorphous Ge is not observed. However, the fast solid phase epitaxial regrowth causes a rapid redistribution of P. After completion of the regrowth and at temperatures above 500 °C, a concentration-dependent diffusion of P in crystalline Ge takes place and leads to considerable loss of P toward the surface. An appreciable influence of implantation defects on the diffusion coefficient of P is not detected. For 60 s rapid thermal annealing at 600 °C and for 20 ms flash lamp annealing at 900 °C, the junction depth and the sheet resistance vary between 140 and 200 nm and between 50 and 100 Ω, respectively, and the maximum electrical activation of P is about 3–7×1019 cm−3.

Wear, Plasticity, and Rehybridization in Tetrahedral Amorphous Carbon

Wear in self-mated tetrahedral amorphous carbon (ta-C) films is studied by molecular dynamics and near-edge X-ray absorption fine structure spectroscopy. Both theory and experiment demonstrate the formation of a soft amorphous carbon (a-C) layer with increased sp2 content, which grows faster than an a-C tribolayer found on self-mated diamond sliding under similar conditions. The faster

Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium

\hbox{sp}^{3} \rightarrow\,\hbox{ sp}^{2}

Ab Initio Atomic Simulations of Antisite Pair Recovery in Cubic Silicon Carbide

sp3→sp2 transition in ta-C is explained by easy breaking of prestressed bonds in a finite, nanoscale ta-C region, whereas diamond amorphization occurs at an atomically sharp interface. A detailed analysis of the underlying rehybridization mechanism reveals that the

Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth

\hbox{sp}^{3}\, \rightarrow\hbox{ sp}^{2}