Mauricio Manfrini

Spin-Hall assisted magnetic random access memory

We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy. A sub-nanosecond in-plane polarized spin current pulse is generated using the spin-Hall effect, disturbing the stable magnetic state. Subsequent switching using out-of-plane polarized spin current becomes highly efficient. Through evaluation of the Landau-Lifshitz-Gilbert equation, we quantitatively assess the viability of this write scheme for a wide range of system parameters. A typical example shows an eight-fold reduction in tunnel current density, corresponding to a fifty-fold reduction in write energy, while maintaining a 1 ns write time.

Frequency shift keying in vortex-based spin torque oscillators

Vortex-based spin-torque oscillators can be made from extended spin valves connected to an electrical nanocontact. We study the implementation of frequency shift keying modulation in these oscillators. Upon a square modulation of the current in the 10 MHz range, the vortex frequency follows the current command, with easy identification of the two swapping frequencies in the spectral measurements. The frequency distribution of the output power can be accounted for by convolution transformations of the dc current vortex waveform, and the current modulation. Modeling indicates that the frequency transitions are phase coherent and last less than 25 ns. Complementing the multi-octave tunability and first-class agility, the capability of frequency shift keying modulation is an additional milestone for the implementation of vortex-based oscillators in radio frequency circuits.

Performance analysis of MgO-based perpendicularly magnetized tunnel junctions

We studied state of the art perpendicularly magnetized tunnel junctions to identify performance improvement opportunities. The free layer has both a low damping and a large anisotropy. Conversely, the perpendicular remanence of the reference layer requires its encapsulation and its coupling with the hard layer. The weak pinning and low damping of the reference layer may make it prone to fluctuations induced by spin-torque. The combined optimization of the interface anisotropies on both sides of the MgO, together with the reproducibility of the interlayer exchange coupling are the main material challenges for our type of magnetic tunnel junctions.

STT MRAM patterning challenges

In this paper we report on the patterning challenges for the integration of Spin-Transfer Torque Magneto-Resistive- Random-Access Memory (STT MRAM). An overview of the different patterning approaches that have been evaluated in the past decade is presented. Plasma based etching, wet echting, but also none subtractive pattering approaches are covered. The paper also reports on the patterning strategies, currently under investigation at imec.

Experimental study of current-driven vortex oscillations in magnetic nanocontacts

The passage of spin-polarized currents through magnetic nanocontacts can lead to the excitation of self-sustained vortex oscillations in the free layer of a spin-valve stack. These oscillations involve the large amplitude translational motion of the vortex core about the contact region, with oscillation frequencies typically in the 200-500 MHz range. Here, we present a detailed experimental study of such current-driven vortex oscillations. In particular, we show that the oscillation mode is possible in zero applied magnetic field and is only stable within a range of in-plane applied fields.

Transport properties of chemically synthesized MoS2 – Dielectric effects and defects scattering

We report on the electrical characterization of synthetic, large-area MoS2 layers obtained by the sulfurization technique. The effects of dielectric encapsulation and localized defect states on the intrinsic transport properties are explored with the aid of temperature-dependent measurements. We study the effect of dielectric environment by transferring as-grown MoS2 films into different dielectrics such as SiO2, Al2O3, HfO2, and ZrO2 with increasing dielectric permittivity. Electrical data are collected on a statistically-relevant device ensemble and allow to assess device performances on a large scale assembly. Our devices show relative in-sensitiveness of mobility with respect to dielectric encapsulation. We conclude that the device behavior is strongly affected by several scattering mechanisms of different origin that can completely mask any effect related to dielectric mismatch. At low temperatures, conductivity of the devices is thermally activated, a clear footprint of the existence of a mobility e...

Wide operating window spin-torque majority gate towards large-scale integration of logic circuits

Spin Torque Majority Gate (STMG) is a logic concept that inherits the non-volatility and the compact size of MRAM devices. In the original STMG design, the operating range was restricted to very small size and anisotropy, due to the exchange-driven character of domain expansion. Here, we propose an improved STMG concept where the domain wall is driven with current. Thus, input switching and domain wall propagation are decoupled, leading to higher energy efficiency and allowing greater technological optimization. To ensure majority operation, pinning sites are introduced. We observe through micromagnetic simulations that the new structure works for all input combinations, regardless of the initial state. Contrary to the original concept, the working condition is only given by threshold and depinning currents. Moreover, cascading is now possible over long distances and fan-out is demonstrated. Therefore, this improved STMG concept is ready to build complete Boolean circuits in absence of external magnetic fields.Spin Torque Majority Gate (STMG) is a logic concept that inherits the non-volatility and the compact size of MRAM devices. In the original STMG design, the operating range was restricted to very small size and anisotropy, due to the exchange-driven character of domain expansion. Here, we propose an improved STMG concept where the domain wall is driven with current. Thus, input switching and domain wall propagation are decoupled, leading to higher energy efficiency and allowing greater technological optimization. To ensure majority operation, pinning sites are introduced. We observe through micromagnetic simulations that the new structure works for all input combinations, regardless of the initial state. Contrary to the original concept, the working condition is only given by threshold and depinning currents. Moreover, cascading is now possible over long distances and fan-out is demonstrated. Therefore, this improved STMG concept is ready to build complete Boolean circuits in absence of external magnetic f...