P. Crozat

42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide

A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 microm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the wavelength of 1.55 microm and a low dark current density of 60 mA/cm(2). At a wavelength of 1.52 microm, a responsivity of 1 A/W is obtained under -0.5 V bias. The process is fully compatible with CMOS technology.

Zero-bias 40Gbit/s germanium waveguide photodetector on silicon

We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.

High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

Design, fabrication and characterization of germanium on silicon photodetector integrated in SOI waveguide are reported. A responsivity of 1 A/W and a -3 dB bandwidth of 25 GHz under 6 V bias have been obtained at lambda=1.55 mum.

Current-driven vortex oscillations in metallic nanocontacts.

We present experimental evidence of subgigahertz spin-transfer oscillations in metallic nanocontacts that are due to the translational motion of a magnetic vortex. The vortex is shown to execute large-amplitude orbital motion outside the contact region. Good agreement with analytical theory and micromagnetics simulations is found.

Current-driven microwave oscillations in current perpendicular-to-plane spin-valve nanopillars

We study the current and temperature dependences of the microwave voltage emission of spin-valve nanopillars subjected to an in-plane magnetic field and a perpendicular-to-plane current. Despite the complex multilayer geometry, clear microwave emission is observed for current densities in the interval of 9×107–13×107Acm−2. The emission frequency stays near 12GHz when I<Ired=11.2×107Acm−2, then redshifts with a slope gradually reaching −350MHz∕mA for 16×107Acm−2. The linewidth narrows exponentially to 3.8MHz at 150K for I<Ired, then broadens again as the emitted voltage redshifts. The temperature dependence of the linewidth exhibits a curvature change around the linewidth minimum.

Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55μm operation

We report the fabrication and the characterization of interdigited metal-germanium on silicon metal photodetectors (metal-semiconductor-metal or MSM) for operation at both optical telecommunication wavelengths: 1.31 and 1.55μm. Femtosecond impulse and frequency experiments have been carried out to characterize those MSM Ge photodetectors. For both wavelengths, the measured 3dB bandwidth under 2V bias are close to 10, 18, 20, and 35GHz for electrode spacings equal to 2000, 1000, 700, and 500nm, respectively.

40 Gbit/s low-loss silicon optical modulator based on a pipin diode

40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point.

High-temperature superconducting surface coil for in vivo microimaging of the human skin

A small, high‐temperature superconducting (HTS) surface coil was used to improve the signal‐to‐noise ratio (SNR) for in vivo human skin microscopy at 1.5 T. The internal noise of the conventional copper coil limits the SNR for this application. Inductive measurements of the HTS coil parameters indicated that at 77 K its internal noise contributed about 4% of the total noise, and the predicted SNR gain was about 3.2‐fold over that of a room‐temperature copper coil. In vivo images of the human skin produced with the HTS coil showed highly resolved details and a 3.7‐fold improvement in SNR over that obtained with the room‐temperature copper coil. Magn Reson Med 45:376–382, 2001.

Subnanosecond magnetization reversal in magnetic nanopillars by spin angular momentum transfer

Sub-ns magnetization switching has been triggered by spin momentum transfer in pulsed current in pillar shaped CoFe∕Cu∕CoFe trilayers. By analyzing the change in magneto-resistance induced after the application of individual short current pulses (100ps–10ns), we measured the probability of magnetization reversal as a function of the current pulse magnitude, polarity and duration, at various temperatures between 150 and 300K. At all studied temperatures, the reversal process can take place within a few 100ps. The energy cost of the reversal scales favorably with the switching speed and decreases in the 1pJ range when using 100ps current pulses at 300K. Significantly higher switching speeds are obtained at lower temperatures, which is opposite to a thermal activation of the reversal.

GaN/AlGaN intersubband optoelectronic devices

This paper reviews recent progress toward intersubband (ISB) devices based on III-nitride quantum wells (QWs). First, we discuss the specific features of ISB active region design using GaN/AlGaN materials, and show that the ISB wavelength can be tailored in a wide spectral range from near- to long infrared wavelengths by engineering the internal electric field and layer thicknesses. We then describe recent results for electro-optical waveguide modulator devices exhibiting a modulation depth as large as 14 dB at telecommunication wavelengths. Finally, we address a new concept of III-nitride QW detectors based on the quantum cascade scheme, and show that these photodetectors offer the prospect of high-speed devices at telecommunication wavelengths.