May C. Copsey

Aerosol-assisted chemical vapour deposition of indium telluride thin films from {In(μ-Te)[N(iPr2PTe)2]}3

Aerosol-assisted chemical vapour deposition (AACVD) studies using {M(μ-Te)[N(iPr2PTe)2]}3 (M = In, Ga) were carried out on glass and Si(100) substrates at deposition temperatures between 325–475 °C. Black, adherent films were obtained in all cases and characterized by XRD, SEM, EDAX and Raman spectroscopy. The indium precursor gave cubic In2Te3 exclusively, whereas the gallium complex generated a mixture of cubic Ga2Te3, monoclinic GaTe and hexagonal Te. Mass spectrometric studies indicate that fragmentation of the indium precursor to give In2Te3 is accompanied by the formation of In[N(iPr2PTe)2]2+ and [N(iPr2PTe)2]2−.

Formation of Ga2Te2 and M3Te3(M = Ga, In) rings from reactions of sodium ditelluroimidodiphosphinate with Group 13 halides

Metathetical reactions of Na[N(iPr2PTe)2] with Group 13 metal halides produce the telluride complexes {Ga(mu-Te)[iPr2PNiPr2PTe]}2(2) and {M(mu-Te)[N(iPr2PTe)2]}3, M = In (3) and Ga (4), which contain central Ga2Te2 and M3Te3 rings, respectively.