Mayank Kumar Rai

Temperature dependant crosstalk analysis in coupled single-walled carbon nanotube (SWCNT) bundle interconnects

The temperature-dependent, crosstalk-induced, noise voltage waveform and its frequency spectrum, in capacitive coupled single-walled carbon nanotube (SWCNT) bundle interconnects, at the far end of victim line, have been analyzed at 22-nm technology node. A similar analysis is performed for copper interconnects and a comparison is made between the results of these two analyses. The SPICE simulation results reveal that at temperature variations ranging from 300 to 500 K, compared with conventional metal (copper) conductors, crosstalk noise voltage levels in CNT, at the far end of victim line, are significantly low. Simulated results further reveal that, with rise in interconnect temperatures, compared with copper interconnects, coupled interconnects of SWCNT bundle filter more noise frequency components. Based on these comparative results, an improved model for extracting inter-bundle, real life, coupling capacitances between SWCNT bundles has been proposed. Copyright

Control of tube parameters on SWCNT bundle interconnect delay and power dissipation

Purpose – This paper aims to propose to study the control of tube parameters in terms of diameter, separation between adjacent tubes and length, on delay and power dissipation in single-walled carbon nanotube (SWCNT) bundle interconnect for VLSI circuits. Design/methodology/approach – The paper considers a distributed-RLC model of interconnect. A CMOS-inverter driving a distributed-RLC model of interconnect with load of 1 pF. A 0.1 GHz pulse of 2 ns rise time provides input to the CMOS-inverter. For SPICE simulation, predictive technology model (PTM) is used for the CMOS-driver. The performance of this setup is studied by SPICE simulation in 22 nm technology node. The results are compared with those of currently used copper interconnect. Findings – SPICE simulation results reveal that delay increases with increase in separation between tubes and diameter whereas the reverse is true for power dissipation. The authors also find that SWCNT bundle interconnects are of lower delay than copper interconnect at v...

Temperature-dependent modeling and performance analysis of single-walled carbon nanotube(SWCNT) bundle interconnects

This paper aims to propose the study of temperature-dependent circuit modeling and performance analysis of SWCNT bundle interconnects. A similar analysis is performed for copper interconnects and a comparison is made between the results of two analyses. The Simulated program with circuit emphasis (SPICE) simulation result revealed that the resistance of both copper and CNT increases with rise in temperature. SWCNT bundle has lower resistance as compared to copper. Simulation result further reveals that the relative delay shows rising trend with rise in temperature at different lengths in both cases. SWCNT bundle shows lower delay then copper due to low resistance and inductance. Relative power also shows the same trend indicating Copper consumes less power than SWCNT bundle interconnects. This is due to the dominance of smaller capacitance of copper.

Control of SWCNT-interconnect performance by tube-diameter

An analysis of the influence of tube diameter on single-walled nanotube (SWCNT) bundle interconnect delay is presented. The analysis shows that due to low resistance and inductance SWCNT-bundle interconnect is of lower delay than copper interconnect. Delay increases with increase in tube diameter of SWCNT. It is desirable to restrict tube diameter to the minimum possible.