Mehdi Banakar

56 Gbps Si/GeSi integrated EAM

The growing demand for fast, reliable and low power interconnect systems requires the development of efficient and scalable CMOS compatible photonic devices, in particular optical modulators. In this paper, we demonstrate an innovative electro absorption modulator (EAM) developed on an 800 nm SOI platform; the device is integrated in a rib waveguide with dimensions of a 1.5 µm x 40 µm, etched on a selectively grown GeSi cavity. High speed measurements at 1566 nm show an eye diagram with dynamic ER of 5.2 dB at 56 Gbps with a power consumption of 44 fJ/bit.The growing demand for fast, reliable and low power interconnect systems requires the development of efficient and scalable CMOS compatible photonic devices, in particular optical modulators. In this paper, we demonstrate an innovative electro absorption modulator (EAM) developed on an 800 nm SOI platform; the device is integrated in a rib waveguide with dimensions of a 1.5 μm x 40 μm, etched on a selectively grown GeSi cavity. High speed measurements at 1566 nm show an eye diagram with dynamic ER of 5.2 dB at 56 Gbps with a power consumption of 44 fJ/bit.

Broadband and high-performance devices for the silicon and silicon-nitride platforms

The increasing demand for higher data rates and small form factor equipment for optical networks is fuelling research on integrated optical devices with small footprint and broad bandwidth. Here, we present novel design approaches for grating couplers in the silicon and silicon nitride platforms that enable broadband operation and highly efficient coupling. Furthermore, we report experimental findings on compact integrated waveguide splitters that provide virtual perfect performance over more than 300 nm of bandwidth at telecom wavelengths.

Mid-infrared Ge-on-Si electro-absorption modulator

We present the first waveguide electro-absorption modulator in germanium-on-silicon material platform at 3.8 μm wavelength, based on free-carrier injection into a straight waveguide. The fabricated 1 mm long device has modulation depth of >35 dB at 7 V.

Tunable index back end of line platform for enhanced integrated photonics

We demonstrate a back end of line compatible SiN based material with tunable refractive index enabling low optical loss, high non-linear Kerr response, low index photonic crystals, high efficiency couplers, low loss waveguides and temperature tolerant MUX for DWDM.

Raw data for "High-speed Si/GeSi hetero-structure Electro Absorption Modulator"

Data plotted in figure 2b, 6a, 6b and 11 of the paper: Mastronardi, L. et al (2017). High-speed Si/GeSi Hetero-Structure Electro Absorption Modulator. Optics Express.

Group IV compounds for integrated photonic applications

We report methods of engineering the bandgap of SiGe and Ge compounds for the fabrication of electro absorption modulators and light emitting devices. We demonstrate uniform composition, single crystal, defect free SiGe-on-insulator formation. The composition can be tuned in different positions of the chip by modifying the structural design. We also demonstrate Ge disks with strain values of 1.1 and 0.6%.