Mengdie Sun

AWG-Based Monolithic

We report a novel arrayed waveguide grating (AWG)-based 4 × 12 GHz multichannel harmonically modelocked semiconductor laser operating near 1535 nm, which was realized by monolithically integrating a semiconductor optical amplifier (SOA) array, a set of passive optical delay lines, an AWG with 400 GHz channel spacing, a saturable absorber, and a common output SOA. Our device layout and fabrication were completed on the European JePPIX InP photonic integration platform, based on the multiproject wafer run foundry approach. We demonstrated four wavelength channels operating in the fifth harmonic mode-locking regime. Channel repetition rate of 12 GHz and 3-dB RF linewidth as narrow as 6 kHz were obtained. The exhibited performance makes our device a very promising candidate as an ultracompact multichannel light source for future hybrid optical time and wavelength division multiplexing, high-speed photonic analog-to-digital conversion, and optical clock recovery applications.

4 \times 12

A two-mode (de)multiplexer [(DE)MUX] based on multimode interference couplers on InP substrate is proposed and experimentally demonstrated. A phase shifting section with a variation of the waveguide thickness is introduced to precisely control the phase shift to realize 100% mode conversion efficiency and multiplexing. Performance analysis of the (DE)MUX is carried out numerically, showing excellent properties with insertion loss <;1.2 dB and crosstalk <;-18.4 dB for both the TE0 and TE1 mode within the whole C-band. The proposed device is also fabricated and demonstrated on InP substrate.

GHz Multichannel Harmonically Mode-Locked Laser

We report a novel high-power bistable distributed feedback (DFB) semiconductor laser diode operating near 1060 nm, which is realized by inserting a high-bandgap electron barrier layer and a grating layer in a super large optical cavity laser design. Optical and electrical bistable characteristics are both observed for this device. An on-state optical output power of 98 mW and an on-off extinction ratio of 22 dB were demonstrated between the bistable states. A qualitative physical model based on carrier population profile shift is used to explain the switching effect. Optical flip-flop operation was also demonstrated.

An MMI-Based Mode (DE)MUX by Varying the Waveguide Thickness of the Phase Shifter

We demonstrate a four-wavelength distributed feedback (DFB) diode laser array integrated with a semiconductor optical amplifier (SOA) for widely tunable terahertz (THz) mode-beating generation. The InP-based monolithically integrated chip consists of DFB laser diodes, an SOA, and a multimode interference (MMI) coupler. Microheaters and electrode plates are integrated on top of each DFB section for continuous and independent wavelength tuning. By heterodyning the output from the DFB lasers on a Uni-Traveling Carrier Photodiode (UTC-PD) integrated antenna, a continuous THz radiation ranging from 0.1 to 2.25 THz was obtained.

Bistable 1060-nm High-Power Single-Mode DFB Laser Diode

We report a monolithically integrated 4×25-Gb/s device for the data center applications. Lasing wavelengths are around 1.55 μm with averaging channel spacing about 600 GHz. 3-dB frequency bandwidths are around 15 GHz.

Integrated Four-Wavelength DFB Diode Laser Array for Continuous-Wave THz Generation

A 1.55-μm dual-wavelength distributed feedback (DFB) laser diode array with integrated semiconductor optical amplifiers (SOAs) and multimode interference (MMI) coupler is demonstrated to realize widely tunable continuous-wave terahertz (THz) mode-beating signal generation. DFB lasers, SOAs, MMI coupler and spot-size converters (SSCs) have been integrated on the same InP based substrate. By electrically tuning the wavelength of the two single mode lasing DFB lasers, the chip shows a wide optical mode-beating frequency ranging from 40 GHz to 0.8 THz.

4 ×25-Gb/s monolithically integrated light source in the data centre

We present for the first time a monolithic multi-wavelength colliding pulse mode-locked semiconductor laser diode working in a passive 10th harmonic mode-locking operation state based on InP/InGaAsP material system. Nearly transform-limited 12-ps sech2-pulses with a repetition rate of 28.1 GHz are obtained.