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Mi Ra Park

Myongji University

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international conference on nanotechnology | 2012

Resistive switching characteristics of Ag 2 Se thin film

Nam Joo Lee; Mi Ra Park; Tae-Sik Yoon; Y.J. Choi; C.J. Kang

Electrical properties of silver selenide (Ag2Se) thin film, which is a thickness of 500 nm, were studied using conducting atomic force microscopy (c-AFM). A resistive switching was observed in the sweep voltage range from -7 to +7 V at room temperature. In addition, the Ag/Ag2Se/Au structure was compared with the Ag2Se/Au structure. It was considered that the resistive switching behavior may cause Ag filaments. The typical resistive characteristics of the Ag2Se thin film were presented, and the mechanism was discussed.

Microelectronic Engineering | 2016

Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices

Mi Ra Park; Yawar Abbas; Haider Abbas; Quanli Hu; Tae Sung Lee; Young Jin Choi; Tae-Sik Yoon; Hyun-Ho Lee; Chi Jung Kang

Semiconductor Science and Technology | 2017

A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications

Haider Abbas; Yawar Abbas; Son Ngoc Truong; Kyeong-Sik Min; Mi Ra Park; Jongweon Cho; Tae-Sik Yoon; Chi Jung Kang

Journal of Nanoscience and Nanotechnology | 2017

Resistive Switching Characteristics of Tantalum Oxide and Titanium Oxide Heterojunction Devices

Haider Abbas; Yawar Abbas; Mi Ra Park; Quanli Hu; Tae Sung Lee; Jongweon Cho; Tae-Sik Yoon; Youngjin Choi; Chi Jung Kang

Microelectronic Engineering | 2016

Resistive switching characteristics in manganese oxide and tantalum oxide devices

Quanli Hu; Yawar Abbas; Haider Abbas; Mi Ra Park; Tae-Sik Yoon; Chi Jung Kang

Journal of Nanoscience and Nanotechnology | 2015

Investigation of Switching Phenomenon in Metal-Tantalum Oxide Interface.

Yawar A; Mi Ra Park; Quanli Hu; Song Wj; Tae-Sik Yoon; Youngjin Choi; C.J. Kang

Microelectronic Engineering | 2018

Resistive switching characteristics of Ag/MnO/CeO2/Pt heterostructures memory devices

Quanli Hu; Tae Su Kang; Haider Abbas; Tae Sung Lee; Nam Joo Lee; Mi Ra Park; Tae-Sik Yoon; Chi Jung Kang

Microelectronic Engineering | 2018

Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure

Quanli Hu; Mi Ra Park; Haider Abbas; Tae Su Kang; Tae-Sik Yoon; Chi Jung Kang

Journal of the Korean Physical Society | 2015

Resistive switching characteristics of TiO2 thin films with different electrodes

Jae Hyuk Shim; Quanli Hu; Mi Ra Park; Yawar Abbas; Chi Jung Kang; Jaewan Kim; Tae-Sik Yoon

Japanese Journal of Applied Physics | 2018

Forming-free resistive switching characteristics of manganese oxide and cerium oxide bilayers with crossbar array structure

Quanli Hu; Tae Su Kang; Haider Abbas; Tae Sung Lee; Nam Joo Lee; Tae-Sik Yoon; Jaewan Kim; Mi Ra Park; Chi Jung Kang

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Tae-Sik Yoon

Myongji University

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Quanli Hu

Myongji University

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Chi Jung Kang

Myongji University

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Haider Abbas

Myongji University

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Yawar Abbas

Myongji University

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Tae Su Kang

Myongji University

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Tae Sung Lee

Myongji University

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Nam Joo Lee

Myongji University

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C.J. Kang

Myongji University

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Youngjin Choi

Hanyang University

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