Yawar Abbas

Resistive switching properties of manganese oxide nanoparticles with hexagonal shape

Uniformly sized hexagonal shaped manganese oxide (MnO) nanoparticles were chemically synthesized. The bipolar resistive switching characteristics were investigated in the Ti/MnO/Pt structure. The nanoparticles were assembled as close-packed monolayer with a thickness of 30 nm by dip-coating and annealing procedures. The bipolar resistive switching behaviors in Ti/MnO/Pt device could be caused by the formation and rupture of conductive filaments in the nanoparticles. The temperature dependence of resistance was discussed. The resistance of HRS presented a negative temperature dependence at high temperature, indicating a typical semiconducting behavior. The resistance of LRS increased with the elevated temperature exhibiting a metallic state. Ohmic conduction, space charge limited conduction (SCLC), and Schottky conduction have been investigated for the conduction and switching mechanism.

Live demonstration: Memristor synaptic array with FPGA-implemented neurons for neuromorphic pattern recognition

Memristors were mathematically found by L. O. Chua in 1971 and experimentally demonstrated by HP researchers in 2008 [1], [2]. Since then, memristors have been considered suitable for neuromorphic circuits and systems, because they have some similarities with brains neuronal systems [3], [4], [5]. Memristors are possibly 3-dimensioanl, parallel, analog, defective, etc like brains neuronal systems [6], [7]. In spite of these similarities, memristors are fundamentally electronic devices, not biological cells. The difference of electronic devices versus biological cells leads to very distinctive phenomenal gaps which can be stated as follows; externally-designed versus self-organized, externally-programmed versus self-learned, defect-susceptible versus defect-curable, etc.