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Dive into the research topics where Michael F. Lemon is active.

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Featured researches published by Michael F. Lemon.


Journal of Fluorine Chemistry | 2003

Novel hydrofluorocarbon polymers for use as pellicles in 157 nm semiconductor photolithography: fundamentals of transparency

Roger H. French; Robert Clayton Wheland; Weiming Qiu; Michael F. Lemon; Edward Zhang; Joseph S. Gordon; Viacheslav A. Petrov; V. F. Cherstkov; Nina I Delaygina

With the advent of 157 nm as the next photolithographic wavelength, there has been a need to find transparent and radiation durable polymers for use as soft pellicles. Pellicles are � 1 mm thick polymer membranes used in the photolithographic reproduction of semiconductor integrated circuits to prevent dust particles on the surface of the photomask from imaging into the photoresist coated wafer. Practical pellicle films must transmit at least 98% of incident light and have sufficient radiation durability to withstand kilojoules of optical irradiation at the lithographic wavelength. As exposure wavelengths have become shorter the electronics industry has been able to achieve adequate transparency only by moving from nitrocellulose polymers to perfluorinated polymers as, for example, Teflon 1 AF 1600 and Cytop TM for use in 193 nm photolithography. Unfortunately, the transparency advantages of perfluorinated polymers fail spectacularly at 157 nm; 1 mm thick films of Teflon 1 AF 1600 and Cytop TM have 157 nm transparency of no more than 38 and 2%, respectively, with 157 nm pellicle lifetimes measured in millijoules. Polymers such as ‐[(CH2CHF)xC(CF3)2CH2]y‐, or ‐(CH2CF2)x[2,2-bis(trifluoromethyl)-4,5-difluoro-1,3-dioxole]y‐ with chains that alternate fluorocarbon segments with either oxygen or hydrocarbon segments frequently show >98% transparency at 157 nm, if amorphous. These polymers are made from monomers, such as vinylidene fluoride (VF2) and hexafluoroisobutylene, which themselves exhibit good alternation of CH2 and CF2 in their structures. In addition, we find that ether linkages also can serve to force alternation. In addition, we find that fluorocarbon segments shorter than six carbons, and hydrocarbon segments less than two carbons or less than three carbons if partially fluorinated also promote 157 nm transparency. We also find that even with these design principles, it is advantageous to avoid small rings, as arise in the cyclobutanes. These results suggest a steric component to transparency in addition to the importance of alternation. Upon irradiation these polymers undergo photochemical darkening and therefore none has demonstrated the kilojoule radiation durability lifetimes required to be commercially attractive. This is likely because these exposure lifetimes require every bond to absorb � 10 photons, each photon having an energy roughly twice common bond energies. We have studied intrinsic (composition, molecular weight) and extrinsic (trace metals, impurities, environmental contaminants, oxygen, water) contributions to optical absorption and photochemical darkening in these polymers. Studies of photochemical darkening in model molecules illustrate the dynamics of photochemical darkening and that appreciable lifetimes can be achieved in fluorocarbons. To a first approximation the polymers that have lower 157 nm optical absorbance also tend to show the longest lifetimes. These results imply that quantum yield, or the extent to which the polymer structure can harmlessly dissipate the energy, can be important as well. # 2003 Elsevier Science B.V. All rights reserved.


Proceedings of SPIE, the International Society for Optical Engineering | 2005

Second generation fluids for 193nm immersion lithography

Roger H. French; Weiming Qiu; Min K. Yang; Robert Clayton Wheland; Michael F. Lemon; Aaron Lewis Shoe; Doug J. Adelman; Michael Crawford; Hoang V. Tran; Jerald Feldman; Steve J. McLain; Sheng Peng

Water is the first generation immersion fluid for 193 nm immersion lithography. With a fluid refractive index of 1.436 and an optical absorbance of 0.01/cm at 193 nm, water immersion technology can enable optical lithography for the ITRS’ 65 nm half-pitch node. However, to achieve numerical apertures above 1.35 and to go beyond the 45 nm node, low absorbance fluids with indices higher than 1.6 are needed for the second generation of immersion lithography. We have developed a number of Gen. 2 high index fluids for immersion lithography at 193 nm. These highly transparent fluids have 193 nm indices up to 1.67. 32 nm 1:1 line space imaging has been demonstrated using two of our Gen 2 candidate fluids, representing major advance in optical lithography. To understand the behavior and performance of different fluid classes, we use spectral index measurements to characterize the index dispersion, coupled with Urbach absorption edge analysis, and Lorentz oscillator modeling.


Journal of Micro-nanolithography Mems and Moems | 2005

Imaging of 32-nm 1:1 lines and spaces using 193-nm immersion interference lithography with second-generation immersion fluids to achieve a numerical aperture of 1.5 and a k 1 of 0.25

Roger H. French; Harry Sewell; Min K. Yang; Sheng Peng; Diane McCafferty; Weiming Qiu; Robert Clayton Wheland; Michael F. Lemon; Louis Markoya; Michael Crawford

Water-based immersion lithography using ArF illumination is able to provide optical solutions as far as the 45-nm node, but is not able to achieve the 38- or 32-nm nodes as currently defined. Achieving these lithographic nodes will require new, higher refractive index fluids to re- place the water used in first-generation immersion systems. We have developed a number of such second-generation high-index fluids for im- mersion lithography at 193 nm. These highly transparent fluids have 193-nm indices up to 1.664. To understand the behavior and perfor- mance of different fluid classes, we use spectral index measurements to characterize the index dispersion, coupled with Urbach absorption edge analysis and Lorentz Oscillator modeling. Interference imaging printers have long been available, and they now have a new use: a rapid, cost- effective way to develop immersion lithography, particularly at extremely high resolutions. Although interference printers will never replace classi- cal lens-based lithography systems for semiconductor device production, they do offer a way to develop resist and fluid technology at a relatively low cost. Their simple image-forming format offers easy access to the basic physics of advanced imaging. Issues such as polarization of the image-forming light rays, fluid/resist interaction during exposure, topcoat film performance, and resist line edge roughness LER at extremely high resolutions, can all be readily studied. 32-nm 1:1 line/space L/S imaging is demonstrated using two of the second-generation fluids. These resolutions are well beyond current lens-based system capabili- ties. Results on the performance of various resists and topcoats are also reported for 32-nm L/S features.


Applied Physics Letters | 1997

Optical superlattices—a strategy for designing phase-shift masks for photolithography at 248 and 193 nm: Application to AlN/CrN

Peter Francis Carcia; Roger H. French; M. H. Reilly; Michael F. Lemon; David J. Jones

This letter illustrates with AlN/CrN multilayers that optical superlattices, comprised of multilayers of a uv transmitting dielectric layer and a metallic layer, offer a systematic approach to design and fabricate partially transmitting, phase-shift masks for photolithography. From the measured optical constants of sputtered AlN/CrN multilayers, it was found that films had π-phase shift and tunable optical transmission between 5% and 15% at 365, 248, and 193 nm. We compared the optical properties of sputtered AlN/CrN multilayers to “ideal” superlattices, calculated from the measured optical properties of individual thick CrN and AlN layers, and to compositionally equivalent psuedobinary alloys of (AlN)1−x(CrN)x. Although optical properties for all three systems were nearly the same, which is attractive because it implies wide process lattitude, we found systematic differences that were attributed to their individual structures. A phase shift mask with 6% transmission at 365 nm was fabricated with a 1650-A...


Proceedings of SPIE | 2007

High-index immersion lithography with second-generation immersion fluids to enable numerical aperatures of 1.55 for cost effective 32-nm half pitches

Roger H. French; Vladimir Liberman; Hoang Vi Tran; Jerald Feldman; Douglas J. Adelman; Robert Clayton Wheland; Wenliang Qiu; Stephan James Mclain; Osamu Nagao; Mureo Kaku; Michael T. Mocella; Min Kyu Yang; Michael F. Lemon; Lauren Brubaker; Aaron Lewis Shoe; B. Fones; Bernd Fischel; Knut Krohn; Dennis E. Hardy; Charles Y. Chen

To identify the most practical and cost-effective technology after water immersion lithography (Gen1) for sub-45 nm half pitches, the semiconductor industry continues to debate the relative merits of water double patterning (feasible, but high cost of ownership), EUV (difficulties with timing and infrastructure issues) and high index immersion lithography (single-exposure optical lithography, needing a suitable high index last lens element [HILLE]). With good progress on the HILLE, high index immersion with numerical apertures of 1.55 or above now seems possible. We continue our work on delivering a commercially-viable high index immersion fluid (Gen2). We have optimized several fluids to meet the required refractive index and absorbance specifications at 193 nm. We are also continuing to examine other property/process requirements relevant to commercial use, such as fluid radiation durability, last lens element contamination and cleaning, resist interactions and profile effects, and particle contamination and prevention. These studies show that both fluid handling issues, as well as active fluid recycling, must be well understood and carefully managed to maintain optimum fluid properties. Low-absorbing third generation immersion fluids, with refractive indices above 1.7 (Gen3), would further expand the resolution of singleexposure 193 nm lithography to below 32 nm half pitch.


photovoltaic specialists conference | 2009

Optical properties of materials for concentrator photovoltaic systems

Roger H. French; J. M. Rodríguez-Parada; Min K. Yang; Rebekah Ann Derryberry; Michael F. Lemon; M. J. Brown; C. R. Haeger; Sam Louis Samuels; E. C. Romano; R. E. Richardson

As part of our research on materials for concentrator photovoltaics (CPV), we are evaluating the optical properties and solar radiation durability of a number of polymeric materials with potential CPV application. For optical materials in imaging or non-imaging optical systems, detailed knowledge of the wavelength dependent complex index of refraction is important for optical system design and performance. Here we report the index of refraction, optical absorbance and haze results of various polymers of interest for CPV systems. Fluoropolymers such as polyvinylfluoride (Tedlar? PVF Film), which has wide application in crystalline silicon (c-Si) flat plate PV modules, as well as poly(tetrafluoroethylene-co-hexafluoropropylene) (Teflon? FEP Film) and poly(ethylene-co-tetrafluoroethylene) (Tefzel? ETFE Film) have desirable optical and physical properties for optical applications such as CPV. Hydrocarbon polymers such as polyvinylbutyral (PVB) sheet such as DuPont? PV5200, and the ethylene copolymers such as poly(ethylene-co-vinyl acetate) (EVA) such as Elvax? PV1400, poly(ethylene-co-methacrylic acid metal salt) ionomer sheet such as DuPont? PV5300 have applications as encapsulant in c-Si and other flat plate PV applications. These materials have both a wide variety of polymer compositions and also additive packages, which affect their optical properties such as the UV absorption edge. Even materials such as Kapton? polyimide films, which are used behind the PV cell for their electrically insulating properties, have optical requirements, and we characterize these materials also. The detailed optical properties of these materials will be useful for CPV system design of the geometrical optics, optimization of the systems optical throughput, and also provide insights into the systems optical absorption, for example in the UV, where this absorption can impact the radiation durability of the materials.


Optical Microlithography XVII | 2004

Immersion fluid refractive indices using prism minimum deviation techniques

Roger H. French; Min K. Yang; Michael F. Lemon; Ron A. Synowicki; Greg K. Pribil; Gerald T. Cooney; Craig M. Herzinger; Steven E. Green; John H. Burnett; Simon G. Kaplan

Immersion fluids for 157 nm and 193 nm immersion lithography have been measured over the spectral range from 156 nm to 1700 nm in a nitrogen purged environment. The refractive index n and k of several candidate fluids have been measured using the prism minimum deviation technique implemented on a commercial Variable Angle Spectroscopic Ellipsometer (VASE) system. For measurement the liquids were contained in a triangular prism cell made with fused silica windows. The refractive index of high-purity water at 21.5° C measured over the spectral range 185 nm to 500 nm. was checked against values measured on high accuracy prism minimum deviation equipment by NIST and agreement with NIST has been found to be good. The refractive index at a nominal temperature of 32°C for four fluorinated fluids in the range of n=1.308 to 1.325 at 157 nm are also reported. It was found to be extremely important to correct for temperature differences among different instruments using the thermo-optic coefficient of each liquid. The 157 nm results on fluorinated fluids are compared with measurements at NIST using a VUV Hilger-Chance Refractometer, which measured both the refractive index and the thermo-optic coefficient. In all cases results agree well.


26th Annual International Symposium on Microlithography | 2001

Materials design and development of fluoropolymers for use as pellicles in 157-nm photolithography

Roger H. French; Joseph S. Gordon; David J. Jones; Michael F. Lemon; Robert Clayton Wheland; Xun Zhang; Fredrick Claus Zumsteg; Kenneth George Sharp; Weiming Qiu

The introduction of 157 nm as the next optical lithography wavelength has created a need for new soft (polymeric) or hard (quartz) pellicle materials optimized for this wavelength. Materials design and development of ultra transparent fluoropolymers suitable for 157 nm soft pellicle applications has produced a number of promising candidate materials with absorbances below 0.03/micrometer as is necessary to achieve pellicle transmissions above 95%. We have developed 12 families of experimental TeflonAFR (TAFx) materials which have sufficient transparency to produce transmissions above 95%. For the successful fabrication of 157 nm pellicles from these materials, the fluoropolymers must have appropriate physical properties to permit the spin coating of thin polymer films and their lifting and adhesive mounting to pellicle frames, the processes which produce free standing pellicle membranes of micron scale thickness. Relevant physical properties include molecular weight, glass transition temperature, and mechanical strength and toughness. We have successfully developed various of the ultra transparent TAFx polymer families with these physical properties. Upon irradiation these 157 nm pellicle polymers undergo photochemical darkening, which reduces the 157 nm transmission of the material. Measurements of the photochemical darkening rate allow the estimation of the pellicle lifetime corresponding to a 10% drop in 157 nm transmission. Increasing the 157 nm lifetime of fluoropolymers involves simultaneous optimization of the materials, the pellicle and the end use. Similar optimization was essential to achieve the desired radiation durability lifetimes for pellicles successfully developed for use with KrF (248 nm) and ArF (193 nm) lithography.


6TH INTERNATIONAL CONFERENCE ON CONCENTRATING PHOTOVOLTAIC SYSTEMS: CPV-6 | 2010

Materials for Concentrator Photovoltaic Systems: Optical Properties and Solar Radiation Durability

Roger H. French; Jose Manuel Rodriguez-Parada; Min K. Yang; Michael F. Lemon; E. C. Romano; P. Boydell

Concentrator photovoltaic (CPV) systems are designed to operate over a wide range of solar concentrations, from low concentrations of ∼1 to 12 Suns to medium concentrations in the range from 12 to 200 Suns, to high concentration CPV systems going up to 2000 Suns. Many transparent optical materials are used for a wide variety of functions ranging from refractive and reflective optics to homogenizers, encapsulants and even thermal management. The classes of materials used also span a wide spectrum from hydrocarbon polymers (HCP) and fluoropolymers (FP) to silicon containing polymers and polyimides (PI). The optical properties of these materials are essential to the optical behavior of the system. At the same time radiation durability of these materials under the extremely wide range of solar concentrations is a critical performance requirement for the required lifetime of a CPV system. As part of our research on materials for CPV we are evaluating the optical properties and solar radiation durability of var...


SPIE's 27th Annual International Symposium on Microlithography | 2002

157-nm pellicles: polymer design for transparency and lifetime

Roger H. French; Robert Clayton Wheland; Weiming Qiu; Michael F. Lemon; Gregory Blackman; Xun Zhang; Joe Gordon; Vladimir Liberman; Andrew Grenville; Roderick R. Kunz; Mordechai Rothschild

The introduction of 157 nm as the next optical lithography wavelength has created a need for new soft (polymeric) or hard (quartz) pellicle materials. Pellicles should be > 98% transparent to incident 157 nm light and, ideally, sufficiently resistant to photochemical damage to remain useful for an exposure lifetime of 7.5 kJ/cm2. The transparency specification has been met. We have developed families of experimental Teflon™AF (TAFx) polymers with > 98% transparency which can be spin coated and lifted as micron-scale, unsupported membranes. Still higher transparencies should be possible once optimization of intrinsic (composition, end groups, impurities, molecular weight) and extrinsic (oxygen, absorbed hydrocarbons, contaminants) factors are completed. The measured transparencies of actual pellicle films, however, are affected by many factors other than absorption. Film thickness must be precisely controlled so as to allow operation at the fringe maxima for the lithographic wavelength. Roughness and thickness uniformity are also critical. An important part of our program has thus been learning how to spin membranes from the solvents that dissolve our pellicle candidates. Meeting the durability specification at 157 nm remains a major concern. The 157 nm radiation durability lifetime of a polymer is determined by two fundamental properties: the fraction of 157 nm radiation absorbed and the fraction (quantum efficiency) of this absorbed radiation that results in photochemical darkening. Originally it was assumed that lifetime increases uniformly with increasing transparency. We now have cases where materials with very different absorbances (TAFx4P and 46P) have similar lifetimes and materials with similar absorptions (TAFx46P and 2P) have very different lifetimes. These findings demonstrate the importance of the relative quantum efficiencies as the 157 nm light energy distributes itself along degradative versus non-degradative pathways. In an effort to identify chemical and structural features that control lifetime, we have been studying model molecular materials, some quite similar to the monomer units used to make our pellicle candidates. Several of these models have shown transparencies much higher and lifetimes far longer than our best pellicle candidates to date.

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