Michael F. Lichterman

Amorphous TiO2 coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation

Keeping semiconductors safe from harm Solar cells harvest the energy of sunlight to create electricity, but electricity is hard to store. Solar cells could also be used to make hydrogen from water, which can be stored as a fuel. Separating water into hydrogen and oxygen, however, presents challenges, especially if this is done directly by illuminating the anode that oxides water. Under the acidic or alkaline conditions needed for practical devices, semiconducting anode materials corrode during operation. Hu et al. now show that amorphous titanium dioxide coatings can protect semiconductors from alkaline corrosion while still allowing light through. Science, this issue p. 1005 An amorphous titanium oxide coating protects semiconductors by conducting photogenerated charge carriers to nickel catalysts. Although semiconductors such as silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) have band gaps that make them efficient photoanodes for solar fuel production, these materials are unstable in aqueous media. We show that TiO2 coatings (4 to 143 nanometers thick) grown by atomic layer deposition prevent corrosion, have electronic defects that promote hole conduction, and are sufficiently transparent to reach the light-limited performance of protected semiconductors. In conjunction with a thin layer or islands of Ni oxide electrocatalysts, Si photoanodes exhibited continuous oxidation of 1.0 molar aqueous KOH to O2 for more than 100 hours at photocurrent densities of >30 milliamperes per square centimeter and ~100% Faradaic efficiency. TiO2-coated GaAs and GaP photoelectrodes exhibited photovoltages of 0.81 and 0.59 V and light-limiting photocurrent densities of 14.3 and 3.4 milliamperes per square centimeter, respectively, for water oxidation.

Stabilization of n-cadmium telluride photoanodes for water oxidation to O2(g) in aqueous alkaline electrolytes using amorphous TiO2 films formed by atomic-layer deposition

Although II–VI semiconductors such as CdS, CdTe, CdSe, ZnTe, and alloys thereof can have nearly ideal band gaps and band-edge positions for the production of solar fuels, II–VI photoanodes are well-known to be unstable towards photocorrosion or photopassivation when in contact with aqueous electrolytes. Atomic-layer deposition (ALD) of amorphous, “leaky” TiO2 films coated with thin films or islands of Ni oxide has been shown to robustly protect Si, GaAs, and other III–V materials from photocorrosion and therefore to facilitate the robust, solar-driven photoelectrochemical oxidation of H2O to O2(g). We demonstrate herein that ALD-deposited 140 nm thick amorphous TiO2 films also effectively protect single crystalline n-CdTe photoanodes from corrosion or passivation. An n-CdTe/TiO2 electrode with a thin overlayer of a Ni-oxide based oxygen-evolution electrocatalyst produced 435 ± 15 mV of photovoltage with a light-limited current density of 21 ± 1 mA cm−2 under 100 mW cm−2 of simulated Air Mass 1.5 illumination. The ALD-deposited TiO2 films are highly optically transparent and electrically conductive. We show that an n-CdTe/TiO2/Ni oxide electrode enables the stable solar-driven oxidation of H2O to O2(g) in strongly alkaline aqueous solutions, where passive, intrinsically safe, efficient systems for solar-driven water splitting can be operated.

Direct observation of the energetics at a semiconductor/liquid junction by operando X-ray photoelectron spectroscopy

Photoelectrochemical (PEC) cells based on semiconductor/liquid interfaces provide a method of converting solar energy to electricity or fuels. Currently, the understanding of semiconductor/liquid interfaces is inferred from experiments and models. Operando ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) has been used herein to directly characterize the semiconductor/liquid junction at room temperature under real-time electrochemical control. X-ray synchrotron radiation in conjunction with AP-XPS has enabled simultaneous monitoring of the solid surface, the solid/electrolyte interface, and the bulk electrolyte of a PEC cell as a function of the applied potential, U. The observed shifts in binding energy with respect to the applied potential have directly revealed ohmic and rectifying junction behavior on metallized and semiconducting samples, respectively. Additionally, the non-linear response of the core level binding energies to changes in the applied electrode potential has revealed the influence of defect-derived electronic states on the Galvani potential across the complete cell.

The Influence of Structure and Processing on the Behavior of TiO2 Protective Layers for Stabilization of n-Si/TiO2/Ni Photoanodes for Water Oxidation

Light absorbers with moderate band gaps (1-2 eV) are required for high-efficiency solar fuels devices, but most semiconducting photoanodes undergo photocorrosion or passivation in aqueous solution. Amorphous TiO2 deposited by atomic-layer deposition (ALD) onto various n-type semiconductors (Si, GaAs, GaP, and CdTe) and coated with thin films or islands of Ni produces efficient, stable photoanodes for water oxidation, with the TiO2 films protecting the underlying semiconductor from photocorrosion in pH = 14 KOH(aq). The links between the electronic properties of the TiO2 in these electrodes and the structure and energetic defect states of the material are not yet well-elucidated. We show herein that TiO2 films with a variety of crystal structures and midgap defect state distributions, deposited using both ALD and sputtering, form rectifying junctions with n-Si and are highly conductive toward photogenerated carriers in n-Si/TiO2/Ni photoanodes. Moreover, the photovoltage of these electrodes can be modified by annealing the TiO2 in reducing or oxidizing environments. All of the polycrystalline TiO2 films with compact grain boundaries investigated herein protected the n-Si photoanodes against photocorrosion in pH = 14 KOH(aq). Hence, in these devices, conduction through the TiO2 layer is neither specific to a particular amorphous or crystalline structure nor determined wholly by a particular extrinsic dopant impurity. The coupled structural and energetic properties of TiO2, and potentially other protective oxides, can therefore be controlled to yield optimized photoelectrode performance.

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films.

Significance The development of efficient artificial photosynthetic systems, designed to store solar energy in chemical bonds, requires the pairing of stable light-absorbing electrodes for both the oxidative and reductive half-reactions. The development of such systems has been hindered in part by the lack of semiconducting photoanodes that are stable under the conditions required for the production of O2(g) from water. We demonstrate herein that a reactively sputtered NiOx layer provides a transparent, antireflective, conductive, chemically stable, inherently catalytic coating that stabilizes many efficient and technologically important semiconducting photoanodes under viable system operating conditions, thereby allowing the use of these materials in an integrated system for the sustainable, direct production of fuels from sunlight. Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g).

Measurement of minority-carrier diffusion lengths using wedge-shaped semiconductor photoelectrodes†

Measurement of the photocurrent as a function of the thickness of a light absorber has been shown herein both theoretically and experimentally to provide a method for determination of the minority-carrier diffusion length of a sample. To perform the measurement, an illuminated spot of photons with an energy well above the band gap of the material was scanned along the thickness gradient of a wedge-shaped, rear-illuminated semiconducting light absorber. Photogenerated majority carriers were collected through a back-side transparent ohmic contact, and a front-side liquid or Schottky junction collected the photogenerated minority carriers. Calculations showed that the diffusion length could be evaluated from the exponential variation in photocurrent as a function of the thickness of the sample. Good agreement was observed between experiment and theory for a solid-state silicon Schottky junction measured using this method. As an example for the application of the technique to semiconductor/liquid-junction photoelectrodes, the minority-carrier diffusion length was determined for graded thickness, sputtered tungsten trioxide and polished bismuth vanadate films under back-illumination in contact with an aqueous electrolyte. This wedge technique does not require knowledge of the spectral absorption coefficient, doping, or surface recombination velocity of the sample.

Gastight Hydrodynamic Electrochemistry: Design for a Hermetically Sealed Rotating Disk Electrode Cell

Rotating disk electrodes (RDEs) are widely used in electrochemical characterization to analyze the mechanisms of various electrocatalytic reactions. RDE experiments often make use of or require collection and quantification of gaseous products. The combination of rotating parts and gaseous analytes makes the design of RDE cells that allow for headspace analysis challenging due to gas leaks at the interface of the cell body and the rotator. In this manuscript we describe a new, hermetically sealed electrochemical cell that allows for electrode rotation while simultaneously providing a gastight environment. Electrode rotation in this new cell design is controlled by magnetically coupling the working electrode to a rotating magnetic driver. Calibration of the RDE using a tachometer shows that the rotation speed of the electrode is the same as that of the magnetic driver. To validate the performance of this cell for hydrodynamic measurements, limiting currents from the reduction of a potassium ferrocyanide (K4[Fe(CN)6]·3H2O) were measured and shown to compare favorably with calculated values from the Levich equation and with data obtained using more typical, nongastight RDE cells. Faradaic efficiencies of ∼95% were measured in the gas phase for oxygen evolution in alkaline media at an Inconel 625 alloy electrocatalyst during rotation at 1600 rpm. These data verify that a gastight environment is maintained even during rotation.