Michael Sanchez

Observation of bistability in a Vertical-Cavity Semiconductor Optical Amplifier (VCSOA)

We report, the first time to our knowledge, an observation of optical bistability in a Vertical-Cavity Semiconductor Optical Amplifier (VCSOA) operated in reflection mode. Counterclockwise hysteresis loops are obtained over a range of initial phase detuning and bias currents. One hysteresis loop is observed experimentally with an input power as low as 2 ìW when the device is biased at 98% of its lasing threshold. We also numerically simulate the optical bistability and obtain good agreement with our experimental observations. Bistable VCSOAs significantly advances the prospect of dense 2-D array of low switching-intensity all-optical logic and memory elements.

Vertical-cavity optical AND gate

Abstract We have demonstrated, the first time to our knowledge, a low-input intensity high-contrast (10:1) optical AND gate based on the differential gain (optical bistability) observed in an 850 nm GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The input switching power is about 6 μW, which equals to the intensity of 16 nW / μm 2 . It is about 2 orders of magnitude lower than in in-plane semiconductor optical amplifiers. In the experiment the device also shows an optical gain of 10 dB.

Nonlinear gain in vertical-cavity semiconductor optical amplifiers

We report on the wavelength-dependent nonlinear-gain properties of a vertical-cavity semiconductor optical amplifier. A step-like output versus input transfer curve and bistability are found on the long wavelength side of the resonant peak. The characteristics are caused by a dispersive nonlinearity arising from gain saturation in the device. The nonlinear transfer of the amplifier could be used for logic regeneration and all-optical logic operations, while the optical injection power required to switch the device is an order of magnitude lower than previously reported with edge-emitting devices.

Integration of optoelectronic array devices for cell transport and sorting

Current biochip technologies typically rely on electrostatic or mechanical forces for the transport and sorting of biological samples such as single cells. In this paper we have investigated how optical pressure forces can be effectively used for the manipulation of cells and switching in a microfluidic system. By projecting the optical beams externally non-contact between the control devices and the sample chip is possible thus allowing the sample chips to be disposable which reduces the chance of cross-contamination. In one implementation we have shown that vertical cavity surface emitting laser (VCSEL) array devices used as parallel optical tweezer arrays can increase the parallelism of sample manipulation on a chip. We have demonstrated the use of a high-order Laguerre-Gaussian mode VCSEL for optical tweezing of polystyrene microspheres and live cells. We have also shown that optical pressure forces from higher- power sources can be used for the switching of particles within microfluidic channels. Both the attractive gradient force and the scattering force of a focused optical beam have been used to direct small particles flowing through junctions molded in PDMS. We believe that by integrating optical array devices for simultaneous detection and manipulation, highly parallel and low-cost analysis and sorting devices may be achieved.

Optical bistability in vertical-cavity semiconductor optical amplifiers

We present an overview of the properties and applications of optical bistability in vertical-cavity semiconductor optical amplifiers (VCSOAs). The basic physics and analytical models of this optical nonlinearity are discussed. Experimental results obtained from a VCSOA operated in the 850 nm wavelength region are presented. Counterclockwise hysteresis loops are obtained over a range of initial phase detuning and bias currents. One hysteresis loop is observed experimentally with an input power as low as 2 muW when the device is biased at 98% of its lasing threshold. Numerical simulations based on the Fabry-Perot resonator model and rate equations we developed show good agreement with our experimental observations. In addition, a low input intensity high contrast (10:1) optical and gate and 2R regeneration are demonstrated. We believe that bistable VCSOAs can significantly advance the prospect of a dense two-dimensional array of low-switching-intensity all-optical logic and memory elements.

Rate Equations for modeling dispersive nonlinearity in Fabry-Perot semiconductor optical amplifiers

We model the non-linear gain characteristics of a Fabry-Perot semiconductor optical amplifier using a modified photon density rate equation. Good agreement is found with experimental results, with the simulation accurately reproducing all the major characteristics of the amplifier. To our knowledge, this is the first calculation using only the rate equations that accurately predicts the gain and nonlinear behavior of FPSOAs.

Polarization anisotropy in vertical-cavity semiconductor optical amplifiers

The polarization-dependent gain (PDG) characteristics of a vertical-cavity semiconductor optical amplifier (VCSOA) are measured, and the case of the PDG is determined. It is often assumed that the polarization states of a VCSOA are degenerate because of the circular geometry of the device. This assumption is not true in practice, and it is found that VCSOAs possess a dominant linear polarization state and a small difference in frequency between polarization states. The difference in resonant frequencies causes the PDG of the VCSOA. Measurements of the polarization state show that the cause of the splitting is electro-optic birefringence.

New photon density rate equation for Fabry-Perot semiconductor optical amplifiers (FP SOAs)

Two different approaches are commonly used for Fabry-Perot Semiconductor Optical Amplifiers (FP SOAs) performance analysis: the Fabry-Perot resonator approach and rate equation approach. Compared with the Fabry-Perot resonator approach, the rate equation approach is more powerful because noise and mode-related performance analysis can be included. However, it has been shown that the results based on Fabry-perot approach contains multiplicative factor which arise from an explicit consideration of the resonator and those factors are missing in the rate equation approach. As a result, the existing rate equations provide a poor description of FP SOAs. Our analysis shows that this is due to the fact that the interference between the injected optical field and the intracavity optical field has not been taken into account properly. In this paper, a new photon density rate equation for Fabry-Perot semiconductor optical amplifiers is derived based on the electric field rate equation. By taking this interference into account, our derivation shows that the input coupling term in the photon density rate equation is a function of the top and bottom mirror reflectivity, as well as the bias condition. Optical gain predictions from this new photon density rate equation match well with experimental measurements.

Micro gradient-index conical lenses: Simulation and fabrication methods

In this paper, a micro gradient-index conical lens, which has a larger acceptance angle than a conventional microlens, is presented. Methods on how to simulate these lenses in commercial optical design software CodeV are introduced, and the effects of several index profiles and cone shapes are compared in simulation. Results show that a micro gradient-index conical lens has a four times larger acceptance angle compared with a microlens. Additionally, conical lenses with a Gaussian-index profile show a larger acceptance angle than those with a solid refractive index. Fabricated conical lenses show an acceptance angle of more than 27 degrees for a detection threshold of 50%, which agrees with the simulation result.

Noise and noise figure of vertical-cavity semiconductor optical amplifiers (VCSOAs) operated in reflection mode

In this paper, the noise properties of vertical cavity semiconductor optical amplifiers (VCSOAs) operated in reflection mode are studied. Expressions for noise sources contributing to the total noise detected at amplifier output are derived, based on the photon statistics master equations. The noise figure, defined as the degradation of signal-to-noise ratio (SNR), is analyzed using the assumption that spontaneous emission-signal beat noise dominates. The analysis shows that the noise figure of reflection mode VCSOAs has the same values as that in transmission mode as long as amplifier gain is high (G>>1). Furthermore, simulations depict the dependence of noise figure on device parameters and bias conditions, as well as reveal the importance of the low reflectivity front mirror and the high reflectivity rear mirror for low noise operation. In addition, the noise figure analysis results are compared with experimental measurements, in which amplified spontaneous emission (ASE) power is measured by an optical spectrum analyzer and the noise figure is obtained from the ASE power and the amplifier gain. The measured data are in good agreement with the theoretical predictions.