Michael Thier

Lithographic performance of a dual-stage 0.93NA ArF step and scan system

This paper presents lithographic performance results obtained from the newest member of ASMLs TWINSCAN platform-based step & scan systems, the TWINSCAN XT:1400. The system has been designed to meet the semiconductor industrys aggressive requirements on CD control, overlay and productivity at and below the 65 nm node. This dual stage 193 nm lithographic system combines the worlds highest NA, with excellent overlay and CD control at high throughput on both 200 and 300 mm wafers and is intended for use in volume production environments. Advances in stage technology have enabled further extension of stage scan speeds and an associated increase in tool productivity. However, maximizing the number of yielding die per day also requires stringent overlay and Critical Dimension (CD) control. Tight CD control at improved resolution is supported by the Starlith 1400 projection lens and the extended sigma capabilities of the new AERIAL-E illumination system. Focus control is improved in line with the stringent requirements posed by low-k1 imaging applications, taking full advantage of the unique dual-stage TWINSCAN system architecture.

Performance of a high-productivity 300-mm dual-stage 193-nm 0.75-NA TWINSCAN AT:1100B system for 100-nm applications

To realize high productivity at the 100 nm node, ASML developed the TWINSCANTM AT:1100B. This dual stage 193 nm lithography system combines high throughput TWINSCANTM technology for 300 nm wafers, excellent dynamical performance, and low aberration 0.75 NA StarlithTM1100 projection optics. The system is equipped with a 20 W 4 kHz ArF laser and the AERIALTM II illuminator, enabling high intensity off axis and multi-pole QUASARTM illumination. Important process control requirements for the 100 nm technology node are CD variation across the chip and across the wafer. Full wafer leveling, including dies on the edge of the wafer, and CD uniformity performance on 300 mm wafers with and without topology are presented, showing full wafer CD uniformity numbers as low as 6.3 nm 3(sigma) for 100 nm isolated lines with assisting features. Imaging performance of dense, fully isolated lines, plus dense and isolated contact holes is shown. Also printing of critical customer structures is discussed. With these results it is demonstrated that the TWINSCANTM AT:1100B 300 mm ArF Step & Scan system meets the requirements for the 100 nm node.

Performance of a high productivity 300 mm dual stage 193 nm 0.75 NA TWINSCAN AT:1100B system for 100 nm applications

To realize high productivity at the 100-nm node, ASML developed the TWINSCAN TM AT:1100B. This dual-stage 193-nm lithography system combines high throughput TWINSCAN TM technology for 300-mm wafers, excellent dynamical performance, and low-aberration 0.75-NA Starlith TM 1100 projection optics. The system is equipped with a 20-W 4-kHz ArF laser and the AERIAL TM II illuminator, enabling high intensity off-axis and multipole QUASAR TM illumination. Important process control requirements for the 100-nm technology node are CD variation across the chip and across the wafer. Full wafer leveling, including dies on the edge of the wafer, and CD uniformity performance on 300-mm wafers with and without topology are presented, showing full wafer CD uniformity numbers as low as 6.3 nm 3σ for 100-nm isolated lines with assisting features. Imaging performance of dense, fully isolated lines plus dense and isolated contact holes is shown. Also, printing of critical customer structures is discussed. With these results it is demonstrated that the TWINSCAN TM AT:1100B 300-mm ArF Step & Scan system meets the requirements for the 100-nm node.