Michel Pioro-Ladrière

Electrically driven single-electron spin resonance in a slanting Zeeman field

The integration of a micrometre-sized magnet with a semiconductor device has enabled the individual manipulation of two single electron spins. This approach may provide a scalable route for quantum computing with electron spins confined in quantum dots.

Spectral weight of the hubbard model through cluster perturbation theory

We calculate the spectral weight of the one- and two-dimensional Hubbard models by performing exact diagonalizations of finite clusters and treating intercluster hopping with perturbation theory. Even with relatively modest clusters (e.g., 12 sites), the spectra thus obtained give an accurate description of the exact results. Spin-charge separation (i.e., an extended spectral weight bounded by singularities dispersing with wave vector) is clearly recognized in the one-dimensional Hubbard model, and so is extended spectral weight in the two-dimensional Hubbard model.

Coherent control of three-spin states in a triple quantum dot

Manipulating the electrons trapped in quantum-dot pairs is one possible route to quantum computation. Translating this idea to three quantum dots would enable a whole host of extended functionality. Researchers now generate and manipulate coherent superpositions of quantum states using the spins across three electrical-gate-defined dots.

Two-qubit gate of combined single-spin rotation and interdot spin exchange in a double quantum dot.

A crucial requirement for quantum-information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin-based all-electrical two-qubit gate consisting of single-spin rotations and interdot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We find that the degree of entanglement is controllable by the exchange operation time. The approach represents a key step towards the realization of universal multiple-qubit gates.

Collapse of the spin-singlet phase in quantum dots

We present experimental and theoretical results on a new regime in quantum dots in which the filling factor two-singlet state is replaced by new spin polarized phases. We make use of spin blockade spectroscopy to identify the transition to this new regime as a function of the number of electrons. The key experimental observation is a reversal of the phase in the systematic oscillation of the amplitude of Coulomb blockade peaks as the number of electrons is increased above a critical number. It is found theoretically that correlations are crucial to the existence of the new phases.

Voltage-tunable singlet-triplet transition in lateral quantum dots

(Received 30 November 2001; published 18 July 2002) Results of calculations and high source-drain transport measurements are presented, which demonstrate voltage-tunable entanglement of electron pairs in lateral quantum dots. At a fixed magnetic field, the application of a judiciously chosen gate voltage alters the ground state of an electron pair from an entagled spin singlet to a spin triplet.

Bipolar spin blockade and coherent state superpositions in a triple quantum dot

Spin qubits based on interacting spins in double quantum dots have been demonstrated successfully. Readout of the qubit state involves a conversion of spin to charge information, which is universally achieved by taking advantage of a spin blockade phenomenon resulting from Paulis exclusion principle. The archetypal spin blockade transport signature in double quantum dots takes the form of a rectified current. At present, more complex spin qubit circuits including triple quantum dots are being developed. Here we show, both experimentally and theoretically, that in a linear triple quantum dot circuit the spin blockade becomes bipolar with current strongly suppressed in both bias directions and also that a new quantum coherent mechanism becomes relevant. In this mechanism, charge is transferred non-intuitively via coherent states from one end of the linear triple dot circuit to the other, without involving the centre site. Our results have implications for future complex nanospintronic circuits.

Three-dimensional transport diagram of a triple quantum dot

We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the three-dimensional nature of the stability diagram. We choose the regime most pertinent for spin qubit applications. We find that at low bias transport through the triple quantum dot circuit is only possible at six quadruple point locations. The results are consistent with an equivalent circuit model.

Triple quantum dot device designed for three spin qubits

Electron spin confined in quantum dots is a promising candidate for experimental qubits. Aiming at realizing a three spin-qubit system, we designed split micromagnets suitable for the lateral triple quantum dots. From numerical simulations of the stray magnetic field distribution, field gradients ∼0.8 T/μm and differences of in-plane components ∼10 mT can be attained, which enable the electrical and addressable manipulation of three qubits. Furthermore, this technique can be applied for up to 25 qubits in realistic multiple quantum dots. For the first step of implementing such three-qubit systems, a relevant triple quantum dot device has been fabricated and characteristic charge states were observed.

Micromagnets for coherent control of spin-charge qubit in lateral quantum dots

A lateral quantum dot design for coherent electrical manipulation of a two-level spin-charge system is presented. Two micron-size permanent magnets integrated to high-frequency electrodes produce a static slanting magnetic field suitable for voltage controlled single qubit gate operations. Stray field deviation from the slanting form is taken into account in the Hamiltonian describing the two-level system, which involves hybridization of a single electron spin to the quantum dot’s orbitals. Operation speed and gate fidelity are related to device parameters. Sub-100-ns π pulse duration can be achieved with lattice fluctuation coherence time of 4ms for GaAs.