Michiro Sugitani

V th control by halo implantation using the SEN's MIND system

For improvement of device yield within a wafer, the SENs MIND system is powerful tool. It is found out that one can compensate variations from other manufacturing processes of semiconductor devices and can fabricate the “same” semiconductor devices with using the MIND system.

Introduction of the SHX‐III System, a Single‐Wafer High‐Current Ion Implanter

The SHX‐III system, categorized as a single‐wafer high‐current ion implanter, has been developed by SEN Corporation in order to meet all the requirements for high dose and relatively high mid‐dose applications, including high‐tilted multi‐step implantation. Recently the three major advanced device types, namely logic devices, memory and imagers, started to require high‐current ion implanters in diverse ways. The SHX‐III is designed to fulfill such a variety of requirements in one system. The SHX‐III has the same end station as the MC3‐II/WR, SEN’s latest medium current implanter, which has a mechanical throughput of 450 WPH. This capability and precise dose control system of the SHX‐III causes dramatic productivity enhancement for application of mid‐high dose, ranged between 5E13 to 2E14 atoms/cm2, usually performed by medium current ion implanters. In this paper the concept and performance of the SHX‐III will be described, concerning influence of device characteristics. A concept and performance data of ...

Introduction of the MC3-II/GP system, medium current ion implanter with enhanced multi-charge beam current

The MC3-II/GP is a leading-edge single-wafer medium-current ion implanter, newly developed by SEN Corporation. It demonstrates exceptional productivity based on a high speed wafer-handling station and enhanced beam current. It covers a substantively wider energy range in order to fully meet advanced device requirements. Retaining the superior features of the MC3-II/WR, the MC3-II/GP provides a remarkable increase of multiply-charged beam current coupled with longer ion source lifetime. Another advanced feature of the MC3-II/GP is a 30 second or 14% reduction in auto beam setup time. These improvements enable a fabrication line to reduce the total number of ion implanters and dramatically reduce COO.

Introduction of the MC3-II/WR System, an Extended Energy Medium Current Ion Implanter

The MC3‐II/WR is a medium‐current ion implanter, newly developed by SEN Corporation. The most significant change from the original MC3‐II is an expansion of its energy coverage with an extended terminal voltage from 260 kV to 320 kV. This expansion takes in a large portion of high energy applications and results in significant cost reduction of device production. The MC3‐II system was developed to meet requirements of advanced LSI’s, especially requirements for implant accuracy through its controllability of beam quality, keeping productivity high or. The MC3‐II/WR inherits the MC3‐II’s advantages and enhances its capability in the energy region and mechanical throughput.

Profile and Angle Measurement System of SHX

To cope with the manufacturing processes for shrunk semiconductor devices, a precise implant angle control is required for the latest generation of ion implanters. Various ideas are incorporated into the SHX, a single wafer type high current ion implanter developed by SEN Corporation, to meet the requirements not only with a newly designed beam line but also with an accurate angle monitoring system.In the SHX, an ion beam is transported to the electrostatic beam scanning system after a mass analysis. The scanned beam passes through Parallel Lens to be arranged in the parallel direction. Next, the beam is bent vertically by the energy filter and reaches the wafer platen, finally. The beam profile measurement system, Beam Profiler, is positioned on the same plane as the wafer.The Beam Profiler can measure horizontal uniformity of the scanned beam current. Using the Divergence Mask, information about the horizontal beam parallelism at the wafer position also can be acquired. In addition, 2‐dimensional profil...

Significant roles of ultra-high energy ion implanter for high performance image sensing devices

Ultra-high energy implants with boron at the energy of 5 MeV and phosphorous at the energy of 8 MeV can reach at 6.2 μm and 4.3 μm in silicon substrates, respectively. Such high energy implants give image sensors superior characteristics and are now available on both a batch type and single-wafer type of implanters. There are several pros and cons for each type of ultra-high energy implanters. The comparison points are accuracy of implant angle, amount of implant damage, damage uniformity, throughput, beam setup time, wafer cooling capability, particle attack, dose undulation, outgas influence, and so on. Contribution of the ultra-high energy implant to high-performance image sensing devices is described with contradistinction of the batch and single-wafer type implanters.

MIND+ system; More universal dose patterns by single-step ion implantation

Electrical characteristics of semi-conductor devices within a wafer are expected to be uniform based on control of the dose pattern during the ion implant process. SEN developed the MIND system (Mapping of Intentional Non-uniform Dosage), to provide such dose pattern control. This capability has been enhanced with MIND+. The new system provides improved two-dimensional dose pattern control with more degrees of freedom and greater accuracy than the original MIND system. In addition, MIND+ can generate practical dose patterns (see below) while using a single step implant. As a result, MIND+ provides a very powerful tool for yield enhancement without sacrificing throughput. This paper will provide more detail on the capabilities and practical applications of the MIND+ system.

Advanced yield-growth method: MIND+ (plus) system

There are many process steps needed to fabricate semi-conductor devices. In general, the goal of every process is to impact all portions of the wafer identically and great effort is applied to eliminating any non-uniformity. However, it is not always possible to remove all variation, especially to the level required by advanced devices. This is especially true for plasma processes such as CVD and etch based on the tendency of plasma density to vary along the radial dimension [1]. The ion implantation process is one of the best candidates to compensate for such variations because of its flexible dose control.

Feasibility study of plasma doping using B 2 H 6 and PH 3 for shallow junction

Several features of plasma doping (PD) are discussed. First, the performance of PD is compared to conventional ion implantation for characteristics such as dose uniformity, repeatability, particles, metal contamination, photo-resist (PR) removal and charging performance. The numerical results are as follows: (1) doping uniformity of boron and phosphorous is about 1.5% and 1%, respectively, within a 300-mm wafer and using practical throughput. (2) Particles is more than three per wafer at 0.15μm or larger during a 2,000 wafer test run. (3) Metal contamination is below 1E10/cm2 for all of the major metals including aluminum. Secondly, we discovered a means to eliminate dimples normally created during anneal of He-based PD. Finally, we found a mechanism whereby helium atoms physically drive boron and phosphorous atoms more deeply into the silicon substrate. The mechanism is quite different from conventional ion implantation and enhances abruptness of dopant depth profiles. Thus, we concluded that this type of PD system is a leading candidate for doping at the 22nm node and beyond as well as for 450-mm wafer fabrication.

Controlled dose-modulated ion implantation on serial implanters

In order to compensate the variation from other processes, an intentional non-uniform dosage mapping system has been developed. Modulating both vertical and horizontal scan speed makes it possible to implant in two-dimensional non-uniform dosage even for high-tilt implantation. For zero-degree angle implantation, more complicated non-uniform dosage mapping can be achieved by combining the scan control with step-wise rotations.