Miki Isawa

Line edge roughness measurement technique for fingerprint pattern in block copolymer thin film

Fingerprint edge roughness (FER) is proposed to characterize high frequency roughness of fingerprint pattern edges assembled by lamella forming block copolymer (BCP). The FER is a roughness index which does not include the roughness component of the fingerprint curvature. A technique to evaluate FER by using CD-SEM is also proposed. Centerline of the fingerprint patterns were extracted by utilizing binarization and slimming algorithm, and line width, line width roughness and line edge roughness along the centerline were measured. The FER thus measured showed a good agreement with those determined by utilizing conventional line edge roughness analyzing algorithm. The FERs of fingerprint patterns assembled with various BCP formulations were analyzed. As a result, the proposed technique successfully detected the line edge roughness difference between each BCP formulations with different compositions. The results indicate that the FER might be a useful index to evaluate the patterning performance of BCP as a material for DSA process. The proposed technique will provide a method for fast and easy development of BCP materials and processes

Application of model-based library approach to photoresist pattern shape measurement in advanced lithography

The model-based library (MBL) matching technique was applied to measurements of photoresist patterns exposed with a leading-edge ArF immersion lithography tool. This technique estimates the dimensions and shape of a target pattern by comparing a measured SEM image profile to a library of simulated line scans. In this study, a double trapezoid model was introduced into MBL library, which was suitable for precise approximation of a photoresist profile. To evaluate variously-shaped patterns, focus-exposure matrix wafers were exposed under three-illuminations. The geometric parameters such as bottom critical dimension (CD), top and bottom sidewall angles were estimated by MBL matching. Lithography simulation results were employed as a reference data in this evaluation. As a result, the trends of the estimated sidewall angles are consistent with the litho-simulation results. MBL bottom CD and threshold method 50% CD are also in a very good agreement. MBL detected wide-SWA variation in a focus series which were determined as in a process window by CD values. The trend of SWA variation, which is potentiality to undergo CD shift at later-etch step, agreed with litho-simulation results. These results suggest that MBL approach can achieve the efficient measurements for process development and control in advanced lithography.

Verification and extension of the MBL technique for photo resist pattern shape measurement

In order to achieve pattern shape measurement with CD-SEM, the Model Based Library (MBL) technique is in the process of development. In this study, several libraries which consisted by double trapezoid model placed in optimum layout, were used to measure the various layout patterns. In order to verify the accuracy of the MBL photoresist pattern shape measurement, CDAFM measurements were carried out as a reference metrology. Both results were compared to each other, and we confirmed that there is a linear correlation between them. After that, to expand the application field of the MBL technique, it was applied to end-of-line (EOL) shape measurement to show the capability. Finally, we confirmed the possibility that the MBL could be applied to more local area shape measurement like hot-spot analysis.