Mikko Kantanen

Millimeter-Wave Integrated Circuits in 65-nm CMOS

We present the design and measurement results of millimeter-wave integrated circuits implemented in 65-nm baseline CMOS. Both active and passive test structures were measured. In addition, we present the design of an on-chip spiral balun and the transition from CPW to the balun and report transistor noise parameter measurement results at V-band. Finally, the design and measurement results of two amplifiers and a balanced resistive mixer are presented. The 40-GHz amplifier exhibits 14.3 dB of gain and the 1-dB output compression point is at +6-dBm power level using a 1.2 V supply with a compact chip area of 0.286 mm2. The 60-GHz amplifier achieves a measured noise figure of 5.6 dB at 60 GHz. The AM/AM and AM/PM results show a saturated output power of +7 dBm using a 1.2 V supply. In downconversion, the balanced resistive mixer achieves 12.5 dB of conversion loss and +5 dBm of 1-dB input compression point. In upconversion, the measured conversion loss was 13.5 dB with -19 dBm of 1-dB output compression point.

60-GHz Millimeter-Wave Identification Reader on 90-nm CMOS and LTCC

A reader module at 60 GHz for high data-rate short-range backscattering-based communications is presented. The reader consists of a CMOS-based oscillator, amplifiers, and a mixer on a low-temperature co-fired ceramic (LTCC) substrate. The filter, power splitter, and antennas are directly patterned on the LTCC. All millimeter-wave components are contained within the module and the only interfaces to the module are the IF and bias lines. Transmit power of the module is +11.6-dBm effective isotropic radiated power with an IF bandwidth of 400 MHz. The LTCC module measures 13×24 mm2 and has a dc power consumption of 130 mW. Reception of a 20-MHz square wave from a tag 5 cm apart from the reader is demonstrated; the suggested millimeter-wave identification concept enables a 102- 103-fold data-rate increase in comparison to the present near-field communication technique, with similar size, range, and power consumption of the reader.

A wide-band on-wafer noise parameter measurement system at 50-75 GHz

A wide-band on-wafer noise parameter measurement system at 50-75 GHz is presented. This measurement system is based on the cold-source method with a computer-controlled waveguide tuner. Calibrations and measurement methods are discussed and measured results for passive and active on-wafer devices are shown over a 50-75 GHz range. An InP high electron-mobility transistor device is used as a test item for the active device. A Monte Carlo analysis to study measurement uncertainties is also shown. The measurement system is a useful tool in the development and verification of device noise models, as well as in device characterization.

Road-Condition Recognition Using 24-GHz Automotive Radar

This paper studies 24-GHz automotive radar technology for detecting low-friction spots caused by water, ice, or snow on asphalt. The backscattering properties of asphalt in different conditions are studied in both laboratory and field experiments. In addition, the effect of water on the backscattering properties of asphalt is studied with a surface scattering model. The results suggest that low-friction spots could be detected with a radar by comparing backscattered signals at different polarizations. The requirements for the radar are considered, and a 24-GHz radar for road-condition recognition is found to be feasible.

On-wafer noise-parameter measurements at W-band

A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.

Technical Solutions for Automotive Intermodulation Radar for Detecting Vulnerable Road Users

Technical solutions for automotive intermodulation radar for detecting vulnerable road users

W-Band On-Wafer Noise Parameter Measurements

Several current and planned space missions for earth observation and astronomy require very low noise receivers at W-band. Key components in W-band low noise receivers are the InP low noise amplifiers (LNA). The design of LNAs is a greatly dependent at the availability of good noise models for the devices used in the LNAs. To characterise devices at W-band an on-wafer noise parameter set-up has been developed and is presented here. Using the set-up the noise parameters of an InP HEMT in the frequency band 79-94 GHz have been measured. These are the first reported noise parameter measurements of active devices at W-band. The measurement set-up is based on the cold-source method.

60 GHz Frequency Conversion 90 nm CMOS Circuits

This paper presents design and a characterisation of an active single-stage single-ended 30 to 60 GHz frequency doubler and a resistive down conversion mixer with differential buffer stage. These MMICs are realised using 90-nm CMOS process. The doubler exhibit 7.1 dB conversion loss and 10.8 dB fundamental frequency suppression with 0 dBm input power and 13.7 mW power consumption. Maximum output power of -4.2 dBm is achieved with 5 dBm input power. The mixer has 9.8 dB conversion gain with +5 dBm local oscillator level. The compression point P1dB is -2 dBm with 14 mW power consumption.

MHEMT G-band low-noise amplifiers

To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here, the performances of 165 and 183 GHz low-noise amplifier microchips intended for atmospheric water vapor profiling application are reported. The microchips are manufactured in metamorphic high-electron mobility transistor technology having a gate length of 50 nm. The on-wafer measured results show noise figures of 4.4-7.4 dB and 16-25 dB gain at the operating frequencies. In addition, two of the amplifiers were assembled in waveguide packages and the measured results show a gain of 19-20 dB and 7 dB noise figure at both 165 and 183 GHz.

Coplanar 155 GHz MHEMT MMIC low noise amplifiers

This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNAs employs a 100-nm gallium arsenide based metamorphic high electron mobility transistors with gate length of 2times15 mum in coplanar waveguide topology. The scattering parameters and noise figures of the amplifiers are presented. The measured gains at 155 GHz are 14-22 dB with the measured noise figures of 6.7-7.2 dB.