Mikko Möttönen

Single-shot readout of an electron spin in silicon

The size of silicon transistors used in microelectronic devices is shrinking to the level at which quantum effects become important. Although this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in silicon can represent a well-isolated quantum bit with long coherence times because of the weak spin–orbit coupling and the possibility of eliminating nuclear spins from the bulk crystal. However, the control of single electrons in silicon has proved challenging, and so far the observation and manipulation of a single spin has been impossible. Here we report the demonstration of single-shot, time-resolved readout of an electron spin in silicon. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor—compatible with current microelectronic technology. We observed a spin lifetime of ∼6 seconds at a magnetic field of 1.5 tesla, and achieved a spin readout fidelity better than 90 per cent. High-fidelity single-shot spin readout in silicon opens the way to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.

Quantum Circuits for General Multiqubit Gates

We consider a generic elementary gate sequence which is needed to implement a general quantum gate acting on n qubits-a unitary transformation with 4(n) degrees of freedom. For synthesizing the gate sequence, a method based on the so-called cosine-sine matrix decomposition is presented. The result is optimal in the number of elementary one-qubit gates, 4(n), and scales more favorably than the previously reported decompositions requiring 4(n)-2(n+1) controlled NOT gates.

Observation of Dirac monopoles in a synthetic magnetic field

Magnetic monopoles—particles that behave as isolated north or south magnetic poles—have been the subject of speculation since the first detailed observations of magnetism several hundred years ago. Numerous theoretical investigations and hitherto unsuccessful experimental searches have followed Dirac’s 1931 development of a theory of monopoles consistent with both quantum mechanics and the gauge invariance of the electromagnetic field. The existence of even a single Dirac magnetic monopole would have far-reaching physical consequences, most famously explaining the quantization of electric charge. Although analogues of magnetic monopoles have been found in exotic spin ices and other systems, there has been no direct experimental observation of Dirac monopoles within a medium described by a quantum field, such as superfluid helium-3 (refs 10, 11, 12, 13). Here we demonstrate the controlled creation of Dirac monopoles in the synthetic magnetic field produced by a spinor Bose–Einstein condensate. Monopoles are identified, in both experiments and matching numerical simulations, at the termini of vortex lines within the condensate. By directly imaging such a vortex line, the presence of a monopole may be discerned from the experimental data alone. These real-space images provide conclusive and long-awaited experimental evidence of the existence of Dirac monopoles. Our result provides an unprecedented opportunity to observe and manipulate these quantum mechanical entities in a controlled environment.

Efficient decomposition of quantum gates.

Optimal implementation of quantum gates is crucial for designing a quantum computer. We consider the matrix representation of an arbitrary multiqubit gate. By ordering the basis vectors using the Gray code, we construct the quantum circuit which is optimal in the sense of fully controlled single-qubit gates and yet is equivalent with the multiqubit gate. In the second step of the optimization, superfluous control bits are eliminated, which eventually results in a smaller total number of the elementary gates. In our scheme the number of controlled NOT gates is O(4(n)) which coincides with the theoretical lower bound.

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

We have developed nanoscale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.

Environment-Assisted Tunneling as an Origin of the Dynes Density of States

We show that the effect of a high-temperature environment in current transport through a normal metal-insulator-superconductor tunnel junction can be described by an effective density of states in the superconductor. In the limit of a resistive low-Ohmic environment, this density of states reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source.

Heat transistor: Demonstration of gate-controlled electronic refrigeration

We present experiments on a superconductor-normal-metal electron refrigerator in a regime where single-electron charging effects are significant. The system functions as a heat transistor; i.e., the heat flux out from the normal-metal island can be controlled with a gate voltage. A theoretical model developed within the framework of single-electron tunneling provides a full quantitative agreement with the experiment. This work serves as the first experimental observation of Coulombic control of heat transfer and, in particular, of refrigeration in a mesoscopic system.

Test of the Jarzynski and Crooks fluctuation relations in an electronic system.

Recent progress on micro- and nanometer-scale manipulation has opened the possibility to probe systems small enough that thermal fluctuations of energy and coordinate variables can be significant compared with their mean behavior. We present an experimental study of nonequilibrium thermodynamics in a classical two-state system, namely, a metallic single-electron box. We have measured with high statistical accuracy the distribution of dissipated energy as single electrons are transferred between the box electrodes. The obtained distributions obey Jarzynski and Crooks fluctuation relations. A comprehensive microscopic theory exists for the system, enabling the experimental distributions to be reproduced without fitting parameters.

Quantum-circuit Refrigerator

Quantum technology promises revolutionizing applications in information processing, communications, sensing and modelling. However, efficient on-demand cooling of the functional quantum degrees of freedom remains challenging in many solid-state implementations, such as superconducting circuits. Here we demonstrate direct cooling of a superconducting resonator mode using voltage-controllable electron tunnelling in a nanoscale refrigerator. This result is revealed by a decreased electron temperature at a resonator-coupled probe resistor, even for an elevated electron temperature at the refrigerator. Our conclusions are verified by control experiments and by a good quantitative agreement between theory and experimental observations at various operation voltages and bath temperatures. In the future, we aim to remove spurious dissipation introduced by our refrigerator and to decrease the operational temperature. Such an ideal quantum-circuit refrigerator has potential applications in the initialization of quantum electric devices. In the superconducting quantum computer, for example, fast and accurate reset of the quantum memory is needed.

Observation of the single-electron regime in a highly tunable silicon quantum dot

We report on low-temperature electronic transport measurements of a silicon metal-oxidesemiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads and vice versa. Appropriate gate biasing enables the dot occupancy to be reduced to the single-electron level, as evidenced by magnetospectroscopy measurements of the ground state of the first two charge transitions. Independent gate control of the electron reservoirs also enables discrimination between excited states of the dot and density of states modulations in the leads.