Min-Chiang Chuang

Strain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth

We investigate the solid phase epitaxial regrowth (SPER) dynamics of phosphorus doped Si:C by time resolvedreflectivity and high resolution x-ray diffraction. The effect of SPER kinetics on strain profile and dopant activation is analyzed. The accumulated tensile strain induced by both C and P during SPER synergistically determines the onset of SPER rate retardation and leads to lower strain and electrical conductance near surface. Physical origin for the observed SPER rate evolution is discussed and explained with a strain included solute trapping model. Possibility of tailoring strain and doping profiles is discussed.

Synthesis of Ultrathin Composition Graded Doped Lateral WSe2/WS2 Heterostructures

Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In particular, the incorporation of substitution and doping into heterostructure formation is rarely reported. Here, we demonstrate growth of a composition graded doped lateral WSe2/WS2 heterostructure by ambient pressure chemical vapor deposition in a single heat cycle. Through Raman and photoluminescence spectroscopy, we demonstrate that the monolayer heterostructure exhibits a clear interface between two domains and a graded composition distribution in each domain. The coexistence of two distinct doping modes, i.e., interstitial and substitutional doping, was verified experimentally. A distinct three-stage growth mechanism consisting of nucleation, epitaxial growth, and substitution was proposed. Electrical transport measurements reveal that this lateral heterostructure has representative characteristics of a photodiodes. The optoelectronic device based on the lateral WSe2/WS2 heterostructure shows improved photodetection performance in terms of a reasonable responsivity and a large photoactive area.

Graphene reduction dynamics unveiled

The reduction dynamics of micron-sized defects created on chemical vapor deposition- (CVD) grown graphene through scanning probe lithography (SPL) is reported here. CVD-grown graphene was locally oxidized using SPL and subsequently reduced, making use of a focused beam of soft x-rays. During this whole process, the reduction dynamics was monitored using a combination of micro-Raman spectroscopy (μ-RS) and micro-x-ray photoelectron spectroscopy (μ-XPS). After x-ray reduction, the graphene film was found to be chemically identical (μ-XPS) but structurally different (μ-RS) from the original graphene. During reduction the population of C–C bonds was found to first increase dramatically and then decrease exponentially. By modeling the dynamics of the C=O → C–O → C–C → C=C reduction process with four coupled-rate equations and three rate constants, the conversion from C–C to C=C bonds was found to be the limiting rate.