Min Hoon Baik

Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability

We report on changes in the structural, interfacial, and electrical characteristics of sub-1 nm equivalent oxide thickness (EOT) HfO2 grown on InAs by atomic layer deposition. When the HfO2 film was deposited on an InAs substrate at a temperature of 300 °C, the HfO2 was in an amorphous phase with an sharp interface, an EOT of 0.9 nm, and low preexisting interfacial defect states. During post deposition annealing (PDA) at 600 °C, the HfO2 was transformed from an amorphous to a single crystalline orthorhombic phase, which minimizes the interfacial lattice mismatch below 0.8%. Accordingly, the HfO2 dielectric after the PDA had a dielectric constant of ∼24 because of the permittivity of the well-ordered orthorhombic HfO2 structure. Moreover, border traps were reduced by half than the as-grown sample due to a reduction in bulk defects in HfO2 dielectric during the PDA. However, in terms of other electrical properties, the characteristics of the PDA-treated sample were degraded compared to the as-grown sample, with EOT values of 1.0 nm and larger interfacial defect states (Dit) above 1 × 10(14) cm(-2) eV(-1). X-ray photoelectron spectroscopy data indicated that the diffusion of In atoms from the InAs substrate into the HfO2 dielectric during the PDA at 600 °C resulted in the development of substantial midgap states.

Sorption of aqueous uranium(VI) ion onto a cation-exchangeable K-birnessite colloid

This paper describes the sorption behaviors of aqueous uranium ions on the K-birnessite. K-birnessite was synthesized by adding a concentrated HCl to an aqueous solution of . Physicochemical characteristics of the K-birnessite, such as structure, specific surface area and surface charge, were investigated. K-birnessite is a layered material and the ions exist in the interlayer of layered K-birnessite. BET specific surface area of the K-birnessite was 38.30 m2/g. The surface charge of K-birnessite was at pH 5.00 and ionic strength of 0.010 M , at which the sorption experiments of uranium ions were carried out. Uranium ions were incorporated into the interlayer of the K-birnessite by cation-exchange reaction with ions, and the distribution coefficient is quite similar to those of common ion-exchange materials. The results might be applicable in the retardation of migration of radioactive materials from the underground disposal site of high-level radioactive waste.

Electrical properties and thermal stability in stack structure of HfO 2 /Al 2 O 3 /InSb by atomic layer deposition

Changes in the electrical properties and thermal stability of HfO2 grown on Al2O3-passivated InSb by atomic layer deposition (ALD) were investigated. The deposited HfO2 on InSb at a temperature of 200u2009°C was in an amorphous phase with low interfacial defect states. During post-deposition annealing (PDA) at 400u2009°C, In–Sb bonding was dissociated and diffusion through HfO2 occurred. The diffusion of indium atoms from the InSb substrate into the HfO2 increased during PDA at 400u2009°C. Most of the diffused atoms reacted with oxygen in the overall HfO2 layer, which degraded the capacitance equivalent thickness (CET). However, since a 1-nm-thick Al2O3 passivation layer on the InSb substrate effectively reduced the diffusion of indium atoms, we could significantly improve the thermal stability of the capacitor. In addition, we could dramatically reduce the gate leakage current by the Al2O3 passivation layer. Even if the border traps measured by C–V data were slightly larger than those of the as-grown sample without the passivation layer, the interface trap density was reduced by the Al2O3 passivation layer. As a result, the passivation layer effectively improved the thermal stability of the capacitor and reduced the interface trap density, compared with the sample without the passivation layer.

Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates

The passivation effect of an Al2O3 layer on the electrical properties was investigated in HfO2-Al2O3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al2O3 passivation layer and its sequence in the HfO2-Al2O3 laminate structures. Because of the interfacial reaction, the Al2O3/HfO2/Al2O3 structure showed the best electrical characteristics. The top Al2O3 layer suppressed the interdiffusion of oxidizing species into the HfO2 films, whereas the bottom Al2O3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al2O3/HfO2/Al2O3/InP structure than that in the HfO2-on-InP system. Moreover, conductance data revealed that the Al2O3 layer on InP reduces the midgap traps to 2.6 × 1012 eV-1 cm-2 (compared to that of HfO2/InP, that is, 5.4 × 1012 eV-1 cm-2). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

Oxidation Mechanism of Si1–xGex Nanowires with Au Catalyst Tip as a Function of Ge Content

Si1-xGex nanowires (NWs) (0.22 ≤ x ≤ 0.78) were synthesized using a vapor-liquid-solid procedure with a Au catalyst. We measured the intrinsic physical, chemical, and electrical properties of the oxidized Si1-xGex NWs using several techniques, including transmission electron microscopy, X-ray photoemission spectroscopy, and optical pump-THz probe spectroscopy. We suggest two distinct oxidation mechanisms depending on the Ge content in the Si1-xGex NWs: (i) when the Ge content is around 0.22, a Au catalytic effect brings about oxidation in both the axial and lateral directions; and (ii) when the Ge content is greater than 0.22, the Au tip is detached from the NW body and does not act as a catalyst, which is a result of the high degree of Ge-atom participation in the oxidation process. Additionally, we measured the photoconductivity decay time distribution for the Si1-xGex NWs before and after oxidation process; the decay time is significantly shortened in oxidized Si1-xGex NWs (0.22 < x), whereas it is maintained for Si-rich Si1-xGex NWs (x ≈ 0.22) as compared to the as-grown Si1-xGex NWs. It indicates that the number of defect states is generated with the formation of defective Ge oxide at the oxide-shell-layer/Si1-xGex-core-NW interface.

Microbial copper reduction method to scavenge anthropogenic radioiodine

Unexpected reactor accidents and radioisotope production and consumption have led to a continuous increase in the global-scale contamination of radionuclides. In particular, anthropogenic radioiodine has become critical due to its highly volatile mobilization and recycling in global environments, resulting in widespread, negative impact on nature. We report a novel biostimulant method to effectively scavenge radioiodine that exhibits remarkable selectivity for the highly difficult-to-capture radioiodine of >500-fold over other anions, even under circumneutral pH. We discovered a useful mechanism by which microbially reducible copper (i.e., Cu2+ to Cu+) acts as a strong binder for iodide-iodide anions to form a crystalline halide salt of CuI that is highly insoluble in wastewater. The biocatalytic crystallization of radioiodine is a promising way to remove radioiodine in a great capacity with robust growth momentum, further ensuring its long-term stability through nuclear I− fixation via microcrystal formation.

Separation of selenite and selenate using magnetite

Selenium is one of the interesting elements in human body, because it`s important micro-nutrient for human health as the essential biological tissue in protein. Selenite () and selenate () are the dominant dissolved selenium species in natural water, and their toxicity and chemical properties are very different each other. Thus it is necessary to separate the two selenium species for understanding selenium behaviors in natural waters. Some reported methods, using an alumina-filled column and an ion chromatography, to separate the selenite and selenite may be difficult to directly apply to the natural water. Therefore magnetite selectively adsorbs selenite and selenate according to pH of solution, the separation of selenite and selenate using a magnetite-filled column was successfully obtained at weak alkali solutions. Moreover, the influence of dissolved anions in natural water at the selenite sorption onto magnetite was also investigated because they could hinder the sorption of selenite onto magnetite. In other to directly apply to the natural water, reactive sites of magnetite should be considered because dissolved silicate in natural water can hinder the adsorption of selenite onto magnetite.