Minh Le

High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs

A millimeter-wave MMIC low noise amplifier chip set has been developed. Based on the InP HEMT technology, these LNAs provide state-of-the-art performance as well as excellent yield and repeatability. With greater than 50% chip yield, a three-stage Q-band LNA design achieved 26 to 31 dB of gain from 42 to 50 GHz and 1.8 dB average noise figure from 43.3 to 45.7 GHz. In addition, there are six other LNA designs including a four-stage V-band LNA with 28 dB of gain and 2.3 dB noise figure and a two-stage balanced Q-band LNA that provided 17 dB of gain and has greater than 61% yield.

Millimeter-wave waveguide-bandwidth cryogenically-coolable InP HEMT amplifiers

The design, construction and performance of 65-90 GHz and 75-110 GHz low-noise cryogenically-coolable amplifiers are presented. A comparison between modeled and measured performance is shown. A laboratory receiver exhibiting an average noise of 50 K across 65-90 GHz and 70 K across 75-110 GHz is described. These are the widest band and lowest noise HEMT receivers ever reported at these frequencies.

Q- and E-band cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs

Design, construction and performance of several cryogenically-coolable millimeter-wave amplifiers for radio astronomy applications, using AlInAs/GaInAs/InP HEMTs, are presented. The examples include a 40-50 GHz amplifier with an average noise temperature of about 15 K and a 60-80 GHz amplifier yielding a laboratory receiver noise temperature of 37 K at 60 GHz and 50 K at 75 GHz.<<ETX>>

Q- and V-band MMIC chip set using 0.1 /spl mu/m millimeter-wave low noise InP HEMTs

A MMIC chip set for millimeter-wave (mmW) communication systems has been developed. The highlights are a 3-stage Q-band LNA with 2.0 dB NF/22 dB of gain and a 2-stage V-band LNA with 2.3 dB NF/15 dB of gain. Altogether, 7 MMIC chips (2 LNAs, 2 mixers, 2 downconverters, and 1 LO amplifier) make up this effort to develop low noise mmW building block functions in the InP HEMT technology.<<ETX>>

Manufacturability of 0.1- mu m millimeterwave low-noise InP HEMTs

Reports on the manufacturability of state-of-the-art passivated 0.1- mu m low-noise InP HEMTs (high electron mobility transistors). These HEMTs offer an attractive, cost-effective solution to millimeter-wave satellite communications. The authors discuss their yield and reproducibility, as well as typical performance at V- and W-bands.<<ETX>>

A comparison of W-band MMIC mixers using InP HEMT technology

This paper compares the performance of three different W-band mixer designs in the same InP HEMT technology. A resistive HEMT mixer, an active HEMT mixer, and a rat-race diode mixer are designed and measured for conversion, intermodulation and noise performance for an LO frequency of 94 GHz and IF frequencies ranging from 0.5 to 5 GHz. This is the first direct comparison of three high-performance W-band mixers fabricated in the same InP HEMT technology.

Millimeter wave InP HEMT technology: Performance and applications

Abstract This paper describes the performance, reliability, and applications of a new millimeterwave technology: the indium phosphide high electron mobility transistor (InP HEMT). This advanced technology is potentially an enabling technology for a wide range of millimeterwave systems.

GaInAs/InP composite channel HEMT's

Summary form only given. Al/sub 0.6/In/sub 0.4/As Schottky layers have been combined with GaInAs/InP composite channels. The effect of changing the thickness of the Ga/sub 0.47/In/sub 0.53/As channel on the DC and RF characteristics of the HEMTs was investigated. Preliminary results indicate that GaInAsP/InP composite channel HEMTs with a Ga/sub 0.47/In/sub 0.53/As channel thickness of 50 AA or less show improvement in the drain-to-source breakdown voltage without sacrificing performance. >