Miro Micovic

Submicron enhancement-mode AlGaN/GaN HEMTs

Most recent GaN-based HEMT technology has been focused toward microwave power applications. In this work, we report DC and RF characteristics of the first E-mode AlGaN/GaN HEMTs fabricated down to 0.2 /spl mu/m gatelength, and having an f/sub t/ reaching 25 GHz. Further improvement of E-mode GaN HEMTs could open potential applications for mixed-signal ICs with a high dynamic range.

A 20 mW, 150 GHz InP HEMT MMIC power amplifier module

This paper describes a power amplifier (PA) module containing an InP high electron mobility transistor (HEMT) monolithic millimeter-wave integrated circuit (MMIC) amplifier chip, designed, and packaged at the Jet Propulsion Laboratory, and fabricated at HRL Laboratories. The module features 20 mW of output power at 150 GHz, with more than 10 mW available in the 148-160 GHz frequency range.

164-GHz MMIC HEMT doubler

In this paper, a MMIC frequency doubler based on an InP HEMT and grounded CPW (GCPW) technology is reported. The doubler demonstrated a conversion loss of only 2 dB and output power of 5 dBm at 164 GHz. The 3 dB output power bandwidth is 14 GHz, or 8.5%. This is the best reported result for a MMIC HEMT doubler above 100 GHz.

80 GHz MMIC HEMT VCO

In this letter a monolithic voltage-controlled oscillator (VCO) operating in the 77.5-83.5 GHz range is presented. InP HEMTs are used for both the active device and varactor. The VCO demonstrated a tuning range of 6 GHz and an output power better than 12.5 dBm in the entire tuning range.

K-band GaN power HFET's with 6.6 W/mm CW saturated output power density and 35% power added efficiency at 20 GHz

AlGaN/GaN heterostructure field effect transistors (HFETs) grown on SiC substrates are currently the most powerful three-terminal microwave solid state devices. While the power performance of these devices is well documented at X-band frequencies, there is growing interest in these devices at higher frequencies. In this study we characterize the power performance of GaN HFETs at 20 GHz. Our results clearly show that GaN HFETs have strong potential for power applications at K-band frequencies and beyond.

Ultra Broadband Low Power MMIC Amplifier

A low power two-stage InP HEMT MMIC amplifier has been developed. The amplifier utilizes 0.12 ¿m T-gate InP HEMTs with 2×25 ¿m gate periphery. This compact microstrip MMIC is only 1.5 mm2 in size. It exhibits gain of 12.5±1 dB at 15 mW of dissipated power over an operating range from 1 to 50 GHz. The gain-bandwidth/dissipation figure of merit is 40 dB GHz/mW. The average noise figure is 3 to 3.8 dB over the Ka band.

Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology

We report the first generation of GaN MMIC circuits that are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) [1] GaN Transistors. The reported broadband Ka-band (27 GHz - 40 GHz) GaN LNA MMICs have Noise Figure (NF) as low as 1 dB measured at a frequency of 37 GHz, NF <; 2 dB with >24dB of gain across 28 GHz- 39.2 GHz frequency range, and a very broad range of usable DC bias conditions (Vd: 0.6V - 4V; Pdc: 5 mW- 310 mW). This is to the best of our knowledge the lowest NF reported for GaN LNA in this frequency band.