Mitsuharu Tabata

Application characteristics of an experimental RB-IGBT (reverse blocking IGBT) module

This paper describes the characteristics of a new 1200 V, 100 A reverse blocking IGBT chip. It will be shown that this new chip exhibits symmetrical off-state blocking voltage and low losses making it a promising candidate for power conversion topologies such as matrix converters, current source inverters, and AC switches. A prototype module configured for the matrix converter application using the new RB-IGBT will also be presented.

Characteristics of a 1200 V PT IGBT with trench gate and local life time control

A new 1200 V IGBT with a V/sub CE/(sat) of 1.9 V at 125/spl deg/C and 140 A/cm/sup 2/ has been developed using a trench gate PT (punch-through) structure and local life time control. Compared to state-of-the-art third generation planar devices, this device represents a 30% improvement of on-state losses at almost twice the current density. This paper describes the structure and characteristics of this new IGBT.

Next generation industrial IGBT module

In this paper the latest IGBT and free wheel diode chip technologies are utilized in new industrial IGBT modules with reduced size and weight. Chip technology refinement and optimization are employed to provide a reduction of static and dynamic losses. A new package with a novel insulation and heat radiating structure that provides expanded chip mounting area will be presented. It will be shown that the maximum current rating available in a given package size can be increased up to 200% compared to conventional module designs while at the same time the module weight can be reduced by up to 45%.