John F. Donlon

Characteristics of a 1200 V PT IGBT with trench gate and local life time control

A new 1200 V IGBT with a V/sub CE/(sat) of 1.9 V at 125/spl deg/C and 140 A/cm/sup 2/ has been developed using a trench gate PT (punch-through) structure and local life time control. Compared to state-of-the-art third generation planar devices, this device represents a 30% improvement of on-state losses at almost twice the current density. This paper describes the structure and characteristics of this new IGBT.

IGBT module with user accessible on-chip current and temperature sensors

This paper describes the characteristics of a new power module having user accessible on-chip temperature and current sensing features. Temperature sensing is accomplished by measuring the forward voltage drop of a string of diodes fabricated on the IGBT chips surface. Current sensing is accomplished using a current mirror structure that diverts a small portion of the main emitter current to an auxiliary “sense” emitter. The on-chip sensing features are directly accessible to the end user enabling control and protection to be tailored to the specific needs of the intended application. The new module also features a unique transfer molded structure that is designed to function as a “known-good” building block for use in a wide range of power electronic assemblies.

Power modules for appliance motor control

The use of inverters in appliance applications is increasing rapidly. This paper describes hybrid power modules that utilize a unique injection-molded lead-frame design and provide the cost-effective integration of power devices, gate drive and protection for such applications.

Characteristics of a 1200 V CSTBT optimized for industrial applications

The design of power semiconductor chips has always involved a trade-off between switching speed, static losses, safe operating area and short-circuit withstanding capability. This paper presents an optimized structure for 1200 V IGBTs from the viewpoint of all-round performance. The new device is based on a novel wide cell pitch carrier stored trench bipolar transistor (CSTBT). Unlike conventional trench gate IGBTs, this structure simultaneously achieves both low on-state voltage and the rugged short-circuit capability desired for industrial applications.

The latest advances in industrial IGBT module technology

More than ten years have elapsed since IGBT modules first emerged as the preferred power semiconductor device for a wide range of industrial applications. During this time IGBT chip and module packaging technology has evolved through multiple generations each with incremental improvements in performance and reliability. At the same time optimized processing techniques and improved yields have reduced the cost of chip manufacturing. As a result, there are often attractive opportunities to upgrade the performance of industrial power conversion equipment while simultaneously reducing cost This paper will summarize the latest advances in IGBT technology and the implications for future applications.

New process technologies improve IGBT module efficiency

New process technologies are extending the application range of IGBT modules. A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC inverter applications. A very low saturation voltage 250 V IGBT has been developed using a trench gate structure. This new 250 V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters.

Large Package Transfer Molded DIP-IPM

This paper presents a new larger version of the dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi Electric for home appliance motor control. The new large DIP-IPM utilizes a high thermal conductivity insulating resin sheet and an integrated aluminum heat spreader to provide the reduced thermal impedance and mechanical integrity required for a higher power applications. Using this approach the range DIP-IPM ratings has now been extended to 75 A at 600 V and 35 A at 1200 V. Like the lower power DIP-IPMs the new large DIP has high voltage integrated circuit (HVIC) based level shifting gate drive with short circuit protection and under voltage lock-out. However, in order to avoid the need for an excessively large current sensing resistor the new DIP uses IGBT chips with a current mirror emitter that produces a low level current proportional to the main emitter current for short circuit detection. In addition, the new DIP-IPM also provides an analog feedback signal proportional the modules temperature.

A new intelligent power module with microprocessor compatible analog current feedback, control input, and status output signals

A new series of intelligent power modules (IPMs) designed for miniature, high performance, low power (0.1 to 1.5 kW) 240 V AC motor drives has been developed. The new IPMs contain IGBT and diode power chips, a high voltage IC and low voltage control logic in a compact isolated base module. Level shifting and charge pumping provided by the high voltage IC allows the module to be operated from a single supply referenced to the negative DC bus. The module has built in interlock logic to prevent shoot-through conditions and protection against output short-circuit, abnormal supply voltage and over temperature conditions. The module uses four separate status output lines to communicate the activation of the internal protection. Analog output current feedback signals are also provided to allow high performance control of torque and motor protection. The control inputs, status outputs and analog current feedback signals are all designed for direct connection to a microprocessor.

A new converter/inverter system for windpower generation utilizing a new 600 Amp, 1200 volt intelligent IGBT power module

This paper briefly reviews the need for windpower generation and the power quality issues associated with the utility interface. The design requirements for the system which drove the need for a new high power intelligent power module (IPM) are presented. The new IPM is described along with its key features and characteristics. The features and implementation of the generator and line side matrices are described. The operation of the IPM in the new system is described and its output along with the output waveforms of the line side inverter are shown. Switching waveforms from both pulse testing and full matrix operation are included to illustrate normal operating, short circuit, and over-current modes. Line side current waveforms demonstrate the effectiveness of the active line side filter in meeting the low total harmonic distortion requirements of the electric utility.<<ETX>>

Optimizing 1200V IGBT Modules for High Frequency Applications

This paper presents a new 1200V 5th generation IGBT module that has been optimized specifically for applications requiring hard turn-on switching and operating frequencies of 15KHz to 30KHz. The module also features reduced turn-off losses compared to standard industrial devices making it suitable pure hard switching applications requiring high PWM frequencies such as sinusoidal output inverters for alternate energy utility interface and high precision industrial motor drives.