Mitsunori Ishizaki

Hybrid integration of waveguide photodiode and preamplifier IC using Au stud bump

The authors developed an InP photodiode (PD) module integrated with an InP HBT preamplifier IC by using an Au stud bump. Theoretical analysis shows that the deviation of the group delay linearly increases in the inductance between the PD and IC. The flip-chip bonding based on the Au stud bump effectively reduces the inductance without sacrificing the individual device performance and reliability. Experimental results show that this technique is suitable for the receiver modules designed for applications with a bandwidth greater than 40 Gb/s

Inductance-controlled electroabsorption Modulator modules using the flip-chip bonding technique

The wire-bonding technique is widely used for the connections between the electroabsorption (EA) modulator chips and the electrical signal transmission lines. However, the parasitic inductance of the bonding wire degrades the electrical characteristics of the EA modulator modules in a high-frequency region. In this paper, we theoretically analyze the influence of parasitic inductance on the base-band digital transmission and obtain the relationship between the EA modulator capacitance and the optimum lead inductance. For precise inductance control, we introduced the flip-chip bonding (FCB) technique and fabricated 40-Gb/s EA modulator modules.