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Mo Ahoujja

Wright Laboratory

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Publication

Featured researches published by Mo Ahoujja.

Physical Review B | 1998

NEGATIVE PERSISTENT PHOTOCONDUCTIVITY IN II-VI ZNS1-XSEX/ZN1-YCDYSE QUANTUM WELLS

Ikai Lo; Shang-Fu Chen; Yung Chun Lee; Li-Wei Tu; W. C. Mitchel; Mo Ahoujja; R. E. Perrin; R. C. Tu; Yan-Kuin Su; Wen-How Lan; S. L. Tu

Journal of Electronic Materials | 1998

Transport coefficients of AlGaN/GaN heterostructures

Mo Ahoujja; W. C. Mitchel; S. Elhamri; R. S. Newrock; D. B. Mast; Joan M. Redwing; Michael A. Tischler; J. S. Flynn

Bulletin of the American Physical Society | 2016

A Model for Mobility Analysis in Semiconductors.

Henry Bourassa; Arthur Siwecki; Mo Ahoujja; S. Elhamri

Bulletin of the American Physical Society | 2016

Impact of Growth Temperature and Post Growth Annealing on the Electrical Properties of InAs/InGaSb Superlattice Structures.

Arthur Siwecki; Henry Bourassa; Mo Ahoujja; Said Elhamri; H. J. Haugan; Gail J. Brown; Shin Mou; W. C. Mitchel

Bulletin of the American Physical Society | 2014

Effects of annealing on InAs/InAsSb type-II infrared superlattices

Sarah T. Hierath; Elizabeth H. Steenbergen; Arthur Siwecki; Mo Ahoujja; S. Elhamri

Bulletin of the American Physical Society | 2012

Electrical characterization of SiGeSn grown on Ge substrate using ultra high vacuum chemical vapor deposition

Mo Ahoujja; S. Kang; M Hamilton; Y. K. Yeo; John Kouvetakis; J. Menéndez

Bulletin of the American Physical Society | 2011

Anisotropic Electrical Properties of Nanostructured Metallic Thin Films

Mo Ahoujja; Piyush Shah; Andrew Saragan; Said Elhamri; Elena Guliants

Bulletin of the American Physical Society | 2011

Electrical characterization of GeSn grown on Si using ultra high vacuum chemical vapor deposition method

Mo Ahoujja; Said Elhamri; John Kouvetakis; John Tolle; Mee Yi Ryu; Y. K. Yeo

Bulletin of the American Physical Society | 2008

Use of Shubnikov-de Haas measurements on AlGaN/GaN structures to investigate the effective mass of GaN.

E.J. Timko; Said Elhamri; Rex Berney; Mo Ahoujja; W. C. Mitchel

Bulletin of the American Physical Society | 2006

Capacitance Dispersion in GaN Grown by Molecular Beam Epitaxy

Mo Ahoujja; Rex Berney; Said Elhamri; Yung Kee Yeo

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Collaboration

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W. C. Mitchel

Air Force Research Laboratory

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Said Elhamri

University of Cincinnati

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D. B. Mast

University of Cincinnati

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R. S. Newrock

University of Cincinnati

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S. Elhamri

University of Dayton

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Arthur Siwecki

University of Dayton

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Joan M. Redwing

Pennsylvania State University

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John Kouvetakis

Arizona State University

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Michael A. Tischler

IBM

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Ikai Lo

National Sun Yat-sen University

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