Mohammad Karbalaei Akbari

ALD-Developed Plasmonic Two-Dimensional Au–WO3–TiO2 Heterojunction Architectonics for Design of Photovoltaic Devices

Electrically responsive plasmonic devices, which benefit from the privilege of surface plasmon excited hot carries, have supported fascinating applications in the visible-light-assisted technologies. The properties of plasmonic devices can be tuned by controlling charge transfer. It can be attained by intentional architecturing of the metal-semiconductor (MS) interfaces. In this study, the wafer-scaled fabrication of two-dimensional (2D) TiO2 semiconductors on the granular Au metal substrate is achieved using the atomic layer deposition (ALD) technique. The ALD-developed 2D MS heterojunctions exhibited substantial enhancement of the photoresponsivity and demonstrated the improvement of response time for 2D Au-TiO2-based plasmonic devices under visible light illumination. To circumvent the undesired dark current in the plasmonic devices, a 2D WO3 nanofilm (∼0.7 nm) was employed as the intermediate layer on the MS interface to develop the metal-insulator-semiconductor (MIS) 2D heterostructure. As a result, 13.4% improvement of the external quantum efficiency was obtained for fabricated 2D Au-WO3-TiO2 heterojunctions. The impedancometry measurements confirmed the modulation of charge transfer at the 2D MS interface using MIS architectonics. Broadband photoresponsivity from the UV to the visible light region was observed for Au-TiO2 and Au-WO3-TiO2 heterostructures, whereas near-infrared responsivity was not observed. Consequently, considering the versatile nature of the ALD technique, this approach can facilitate the architecturing and design of novel 2D MS and MIS heterojunctions for efficient plasmonic devices.

Engineering the Surface Structure of MoS 2 Nanosheets by Carbon-Doping with Rich Defects to Tune UV-Visible Light Absorption Property

A facile doping method utilizing inexpensive raw materials was proposed to achieve variation in optical bandgap and UV-visible light absorption property of MoS2 nanosheets. Carbon-assistant heating with degreasing cotton has demonstrated the development of carbon-doped MoS2 nanosheets with enhanced rich defects. The results obtained shown that modified MoS2 nanosheets with the lateral width of ~600 nm are exhibited shift of the intensively blue peaks of photo-luminescence (PL) comparing to those MoS2 nanosheets with a lateral dimension of larger than 1 μm. Optical bandgap of the carbon-doped MoS2 nanosheets was found to be broader than that of the pure MoS2 nanosheets and the prepared samples also exhibited a broadband UV-visible light absorption property.

Data set for fabrication of conformal two-dimensional TiO2 by atomic layer deposition using tetrakis (dimethylamino) titanium (TDMAT) and H2O precursors

The data and complementary information presented hare are related to the research article of “http://dx.doi.org/10.1016/j.matdes.2017.02.016; Materials and Design 120 (2017) 99–108” [1]. The article provides data and information on the case of atomic layer deposition (ALD) of ultra-thin two-dimensional TiO2 film. The chemical structure of precursors, and the fabrication process were illustrated. The data of spectral ellipsometric measurements and the methods of calculations were presented. Data of root mean square roughness and the average roughness of the ADL TiO2 film are presented. The method of bandgap measurements and the bandgap calculation are also explained in the present data article.

Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors: Challenges and Opportunities

Atomic Layer Deposition (ALD) is an enabling technology which provides coating and material features with significant advantages compared to other existing techniques for depositing precise ultra-thin two-dimensional (2D) nanostructures. ALD provides digital thickness control to the atomic level by depositing film one atomic layer at a time, as well as pinhole-free films even across large and complex areas. The technique’s capabilities are presented on the example of ALD-developed ultra-thin 2D tungsten oxide (WO3) over the large area of standard 4” Si substrates. The discussed advantages of ALD enable and endorse the employment of this technique for the development of hetero-nanostructure 2D semiconductors with unique properties.